摘要:

Ferroelectric LiNbO3single‐crystal film was successfully grown onto a LiTaO3substrate by a new method, epitaxial‐growth‐by‐melting (EGM) method. The propagation of a He&sngbnd;Ne laser beam fed into the film was demonstrated. Some preliminary results of this new technique for fabricating optical waveguides are reported.

ISSN:0003-6951    

DOI:10.1063/1.1654857

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high‐energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth.

ISSN:0003-6951    

DOI:10.1063/1.1654858

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A ``mean‐time‐to‐failure'' measurement has been made on propagated magnetic bubble domain patterns. A Permalloy T‐bar field‐accessed circuit was used with two compositions of epitaxially grown magnetic garnet films. As the number of steps of propagation at 100 kHz increases, the bias field margins at constant drive field for error‐free propagation are observed to decrease. A reasonable extrapolation of the data taken on a specific circuit‐material combination operated near the center of the bias range at 100 kHz suggests that an error rate as low as 10−20per step is attainable. The effects of the circuit‐to‐garnet spacing and drive field magnitude are discussed, as well as the effects of ion implantation and crystal annealing.

ISSN:0003-6951    

DOI:10.1063/1.1654859

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Transversethermoelectric voltages have been observed to occur when thin Mo and W films are excited by pulsed laser light at normal incidence to the film. Wavelengths in the range 0.46–1.06 &mgr;m and pulse widths of ∼ 3–300 nsec were used. A maximum thermoelectric voltage of ∼50 mV occurring across a load resistance of 50 &OHgr; for an ∼ 1‐kW incident laser pulse has been observed. A correlation between intrinsic film stress and output voltage suggests that the stress gives rise to a nonscalar absolute thermoelectric power (Seebeck coefficients) even though the transport properties of these bulk materials are isotropic.

ISSN:0003-6951    

DOI:10.1063/1.1654860

出版商:AIP    

年代:1973

数据来源: AIP