11. |
DIRECT OBSERVATION OF SINGLE‐DOMAIN SrTiO3 |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 254-257
T. S. Chang,
J. F. Holzrichter,
G. F. Imbusch,
A. L. Schawlow,
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摘要:
A single‐domain SrTiO3crystal is obtained by stressing along the [110] direction at 2°K and is observed optically for the first time. Domain structure under [001] stress is also examined. The importance of understanding the domain structure is discussed.
ISSN:0003-6951
DOI:10.1063/1.1653388
出版商:AIP
年代:1970
数据来源: AIP
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12. |
EXTENSION OF LASER HARMONIC‐FREQUENCY MIXING INTO THE 5‐&mgr; REGIONS |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 257-259
D. R. Sokoloff,
A. Sanchez,
R. M. Osgood,
A. Javan,
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摘要:
Using laser harmonic‐frequency mixing in a metal‐metal point‐contact diode, absolute frequency measurement is extended into the 5‐&mgr; region. The frequency of theP(13) transition of the 7–6 vibrational band in CO is measured to be 58 024 341 ± 55 MHz.
ISSN:0003-6951
DOI:10.1063/1.1653389
出版商:AIP
年代:1970
数据来源: AIP
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13. |
LONGITUDINAL MODES IN A HIGH‐GAIN LASER |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 259-261
Lee Casperson,
Amnon Yariv,
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摘要:
In lasers employing high‐gain narrow‐linewidth transitions the theory predicts major departures of the mode‐splitting frequencies from their low‐gain values as well as a new type of mode splitting. The first of these effects consisting of a reduction by a factor of 2.5 of the mode splitting in a xenon 3.51‐&mgr; laser is observed experimentally.
ISSN:0003-6951
DOI:10.1063/1.1653390
出版商:AIP
年代:1970
数据来源: AIP
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14. |
MOLYBDENUM FILMS AS PARTIAL DIFFUSION MASKS IN MOS PROCESSING |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 261-263
Ahmed El‐Hoshy,
Dale M. Brown,
William E. Engeler,
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摘要:
Thin molybdenum films ∼1000 Å deposited on thermal SO2grown on Si are observed to act as partial masks for B diffusion. B‐doped glass is used as a diffusion source. Detection of the diffusion front is through measuringC‐Vcurves for the MOS structure with molybdenum as the metal electrode. The above process is used to fabricate low threshold enhancement mode and depletion modep‐channel MOSFET's in one diffusion step.
ISSN:0003-6951
DOI:10.1063/1.1653391
出版商:AIP
年代:1970
数据来源: AIP
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15. |
ORIENTATION EFFECTS IN THE RESISTIVITY OF Ta FILMS SPUTTERED IN OXYGEN |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 264-265
W. D. Westwood,
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摘要:
Tantalum films deposited by sputtering in an O&sngbnd;Ar mixture consist of the tetragonal &bgr; phase. As the flow rate of the mixture into the sputtering system increases, the preferred‐growth orientation changes from (200) to (202) and the resistivity &rgr; increases from 265 to 1100&mgr;&OHgr;‐cm. The value of &Dgr;&rgr;/&Dgr;Tdecreases monotonically with increasing (202) orientation, suggesting that the electrical properties are due to the &bgr;‐Ta phase rather than to intergrain tunneling.
ISSN:0003-6951
DOI:10.1063/1.1653392
出版商:AIP
年代:1970
数据来源: AIP
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16. |
DEFLECTION OF AN OPTICAL GUIDED WAVE BY A SURFACE ACOUSTIC WAVE |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 265-267
L. Kuhn,
M. L. Dakss,
P. F. Heidrich,
B. A. Scott,
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摘要:
The experimental demonstration of deflection of an optical film‐guided wave by a surface acoustic wave is reported. When Bragg conditions are satisfied, 0.18 W acoustic power gives rise to 66% deflection efficiency as measured by the depletion of the incident optical guided wave.
ISSN:0003-6951
DOI:10.1063/1.1653393
出版商:AIP
年代:1970
数据来源: AIP
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17. |
ERRATA: INFLUENCE OF IMPURITIES ON Si(111) SURFACE STRUCTURES |
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Applied Physics Letters,
Volume 17,
Issue 6,
1970,
Page 268-268
R. N. Thomas,
M. H. Francombe,
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ISSN:0003-6951
DOI:10.1063/1.1653395
出版商:AIP
年代:1970
数据来源: AIP
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