摘要:

Two organophosphorus compounds, isobutylphosphine and tertiarybutylphosphine, have been investigated for their possible use as precursors in the organometallic vapor phase epitaxy process. They are the first nonhydride compounds to be used as phosphorus sources. Pyrolysis studies show that the first decomposition products are phosphine and various organic compounds. The phosphine then pyrolyzes to give phosphorus. The materials are less pyrophoric and less toxic than phosphine, and so are safer to use. The compounds have been used to grow epitaxial layers of InP on InP and GaAs substrates. The layers exhibit photoluminescence and electrical properties which are similar to those of layers grown with phosphine.

ISSN:0003-6951    

DOI:10.1063/1.96858

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Photoacoustic absorption and transmission measurements are performed to detect the contribution of interface states at the PtSi‐Si interface to the absorption of the metal film. PtSi films on silicon substrates in the thickness range 27–420 A˚ are employed. The results are interpreted by a multilayer optical model. Absorption in an interface layer representing interface states is about 10%.

ISSN:0003-6951    

DOI:10.1063/1.96859

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

3C‐SiCp‐njunction diodes are prepared on Si substrates by chemical vapor deposition growth with appropriate impurity doping, and their current‐voltage (I‐V) and capacitance‐voltage (C‐V) characteristics are studied.I‐Vcurves show good rectifying characteristics with a value of 3.3 for the ideal factornand a reverse leakage current less than 10 &mgr;A at −5 V. The junction area is approximately 0.8 mm2. The built‐in voltage is around 1.4 V byC‐Vmeasurements.

ISSN:0003-6951    

DOI:10.1063/1.96860

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Data are presented showing that boron carryover into theilayer is responsible for the commonly observed difference in open circuit voltage betweenp‐i‐nandn‐i‐pamorphous silicon solar cells. It is proposed that the lower voltage samples are being limited by surface recombination at thep/iinterface and that boron carryover reduces this recombination current. TheVocis then able to rise to the point where it is limited by the bulk recombination current.

ISSN:0003-6951    

DOI:10.1063/1.96861

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Implantation studies with16O and18O isotopes have been used to evaluate a recent proposal that an 889 cm−1absorption band in O‐containing Si is produced by two oxygen atoms in a vacancy. The present isotope studies indicate that the 889 cm−1mode is determined by a single oxygen atom bonded to Si. Thus, O‐O interactions in the 889 cm−1mode must be weak or nonexistent. Possible relationships of the 889 cm−1band to oxygen‐vacancy defects and thermal donors are considered.

ISSN:0003-6951    

DOI:10.1063/1.96862

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The details of the distribution of hole and electron trapping centers in SiO2film on Si have been studied. Trapped holes are located and related mainly to excess silicon at the Si‐SiO2interface and trapped electrons are located and related mainly to excess oxygen at the SiO2surface. By the friction tests of quartz samples, new electrostatic tribo electrification phenomena were found. By oxygen annealing, the trapping of quartz changes from positive to negative and by friction of the same type quartz samples, the surface changes show the same polarity. These results show that electro tribo electrification phenomena are related to surface hole and electron trapping states.

ISSN:0003-6951    

DOI:10.1063/1.96863

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The pulsed gradient nuclear magnetic resonance technique has been applied to the measurement of pore sizes in rocks. The measurements also yield an estimate of the strength of the magnetization relaxation at the pore‐rock interface.

ISSN:0003-6951    

DOI:10.1063/1.96864

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The interaction of SiO2surfaces with ultrathin layers of 4–16 A˚ of Cr evaporated in ultrahigh vacuum has been studied by x‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The surfaces were treated either by Ar sputtering, sputtering, and simultaneous annealing, or by annealing in O2. A room‐temperature reaction occurs on sputtered samples and produces a new XPS peak at a binding energy 4.9 eV lower than that of oxidized Si 2pand a shoulder in the O 1sline. These effects are less pronounced in sputtered‐annealed samples and insignificant in nonsputtered ones. Our results suggest the presence of silicon in a Cr‐rich environment which is at a maximum concentration away from the SiO2‐Cr interface, following a buffer region richer in oxygen.

ISSN:0003-6951    

DOI:10.1063/1.97026

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

In this letter we report a new purely electrical correlation measurement technique permitting time‐resolved analysis of short electrical pulses. This technique provides a cheap and simple tool for measurements in the picosecond time domain, for instance, in the field of fast optoelectronics. In preliminary experiments, a time resolution of 26 ps has been obtained which exceeds the limits of conventional sampling oscilloscopes. The method offers the interesting advantage to be applicable to any short electrical pulse and does not require a synchronized optical pulse, in contrast to the optoelectronic correlation technique used so far in this time regime.

ISSN:0003-6951    

DOI:10.1063/1.96865

出版商:AIP    

年代:1986

数据来源: AIP