摘要:

Three types of new structurea‐Si solar cells having more than 9% efficiency are presented. The first one has a high optical reflection back electrode metal alloyed with optically transparentn‐type &mgr;c‐Si deposited on the conventional glass substratea‐SiC/a‐Si heterojunction solar cell. The second type structure is an invertedp‐i‐nsolar cell having Ag/TiO2/a‐Si metal‐insulator‐semiconductor type back surface electrode which more efficiently collects longer wavelength photocarriers just above the band edge. The third structure demonstrated here hasa‐Si/polycrystalline tandem junction to pick up the energy of longer wavelength photons passing through the front side of thea‐Si solar cell. All key technologies proposed here are practical and offer more promised real alternatives for the fabrication of high efficiencya‐Si solar cells.

ISSN:0003-6951    

DOI:10.1063/1.94462

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The potential of arc lamp annealing techniques in GaAs device processing is demonstrated by the fabrication of Be‐implanted mesapindiodes. Implants were done at 50 and 120 keV with doses of 4.4×1014and 5.1×1014cm−2, respectively (total dose =9.5×1014cm−2) into a 14‐&mgr;m‐thick undoped (ND−NA≊7.5×1014 cm−3) GaAs epitaxial layer grown by vapor phase epitaxy. Ten‐second annealing cycles with peak temperatures of 950° and 1050 °C have been studied. The electrical characteristics of these diodes are superior to published furnace‐annealed, Be‐implanted GaAs diodes.

ISSN:0003-6951    

DOI:10.1063/1.94470

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A contactless measurement technique for electrical depth profiling of very shallowp‐njunctions using a scanning Auger microscope is presented. The physical principle is the detection of variations in internal potential via shifts in the Auger peaks. Depth profiling of shallow junctions is realized by ion milling. Deep junctions are more rapidly analyzed via bevelling. For ap‐njunction of classical depth (3500 A˚), Auger voltage contrast depth profiling is compared with spreading resistance measurements and shown to be an accurate and sensitive means of detecting low concentrations of electrically active impurities (in the 1015cm−3range). The main advantage of the method is excellent depth resolution when using ion milling. This is demonstrated for a very shallowp‐njunction (400 A˚).

ISSN:0003-6951    

DOI:10.1063/1.94471

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Fast electric field aided diffusion of silver in SiO2has been observed for fields of 104V/cm and temperatures as low as 275 °C. The diffusion coefficient of silver in SiO2is estimated to be 10−13cm2/s at 300 °C, with an activation energy of 1.24 eV. The consequences of Ag contamination in very large scale integrated metallization systems are discussed.

ISSN:0003-6951    

DOI:10.1063/1.94472

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Indium phosphide implanted with Se+has been laser annealed with 70 ps pulses at both &lgr;=0.53 and 1.06 &mgr;m. For doses of 1×1015cm−2, activations of ∼70% with peak electron concentrations of 6×1019cm−3have been achieved, while for doses of 3×1015cm−2, activations of 33% with peak electron concentrations of 1.2×1020cm−3were measured. The carrier depth profiles for the laser annealed samples are shallow while those for thermal annealing are broad compared to the as‐implanted profiles. The morphology of the laser annealed spots is briefly discussed.

ISSN:0003-6951    

DOI:10.1063/1.94473

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The electrical properties of (CdZn)S/CuInSe2solar cells have been investigated by combining electron beam induced current measurements and capacitance‐voltage measurements on the same device. In the as‐grown device, the CuInSe2is lightly dopedntype. After baking to about 225 °C in vacuum, the CuInSe2converts toptype forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.

ISSN:0003-6951    

DOI:10.1063/1.94474

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Uniformity and stoichiometry of solid phase epitaxial CoSi2films were investigated by Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy (SEM). In a series of samples, small deviations of the composition ratio from the silicide stoichiometry were always observed in the RBS spectra for the films. Furthermore, it was found from SEM observation that these films were not uniform and the surfaces of the samples consisted of two kinds of materials. From these results and the spectra of micro Auger electron spectroscopy, it was concluded that the surfaces of the samples consisted of a stoichiometric CoSi2region and exposed Si regions.

ISSN:0003-6951    

DOI:10.1063/1.94437

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The commonly used Anderson electron affinity rule is shownnotto provide the band‐edge offsets at the interface between different semiconductors. Using synchrotron radiation excited photoelectron spectroscopy, we determine electron affinities &khgr; of 4.14+0.17−0.09 eV for a Ge(110) surface and of 4.15+0.17−0.09 eV for a 18‐A˚ GaAs(110) epitaxial overlayer on Ge(110). In the same experiment, for the same layers, a conduction‐band discontinuity &Dgr;Ecof 0.54±0.08 eV is measured for the heterojunction of GaAs grown by molecular beam epitaxy on Ge(110). Compilation of data on 14 recent photoemission studies confirms that &Dgr;Ec≠&Dgr; &khgr; for most heterojunction systems investigated to date.

ISSN:0003-6951    

DOI:10.1063/1.94438

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Utilizing two recently developed beam processing techniques, i.e., gas discharge implantation and XeCl excimer laser annealing,p‐njunction silicon solar cells with total area (∼2 cm2) AM1 efficiencies as high as 16.5% have been made. These cells are of a particularly simple structure, fabricated without any sophisticated processing steps, and subjected to no high‐temperature treatment.

ISSN:0003-6951    

DOI:10.1063/1.94439

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The laser melting of amorphous Si is accurately modelled by computer calculations. It is found that the thermal conductivity of the amorphous phase must be set at approximately 10−2W/cm K, a value much lower than that of crystalline material to obtain close agreement with experimental measurements. This low value is, however, consistent with the thermal conductivities of other amorphous materials. The results of the computations, when compared with experimental observations, confirm that the melting point of ion implanted amorphous Si is below that of crystalline Si, with a best estimate in the range 1185–1385 K.

ISSN:0003-6951    

DOI:10.1063/1.94440

出版商:AIP    

年代:1983

数据来源: AIP