摘要:

The combustion of Mg vapor in N2O with He and Co2diluents in a low‐loss coaxial laser cavity has resulted in cw oscillation at 10.6 &mgr;m. The performance characteristics of the flame laser in a coaxial geometry were found to differ significantly from those expected on the basis of previous gain measurements taken in a transverse flow configuration.

ISSN:0003-6951    

DOI:10.1063/1.88278

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A light modulator based on an electro‐optic phase modulation and an optical interference of Mach‐Zehnder type has been demonstrated. The modulator is constructed monolithically with a branching ridged optical waveguide on TiO2‐diffused LiNbO3. The half‐wave voltage is 19 V and the extinction ratio is 34%.

ISSN:0003-6951    

DOI:10.1063/1.88279

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Strong laser emission was observed in the 342‐nm I2band system from an e‐beam–excited mixture of Ar and CF3I (250 : 1) at a total pressure of 10 atm. Laser emission occurred simultaneously at 342.0, 342.3, 342.4, and 342.8 nm with a peak power of 3.6 MW in a 10‐nsec (FWHM) pulse.

ISSN:0003-6951    

DOI:10.1063/1.88280

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

We derive the mathematical condition for the existence in an optical parametric oscillator of an optimum tuning point (OTP), the point of maximum change of signal or idler frequency per unit perturbation by some applied influence. Computer calculations show that such a point exists in LiNbO3, KDP, ADP, LiIO3, and AgGaS2. A graphical interpretation of the OTP is presented. The pump frequency and crystal orientation at the OTP as well as expected tuning ranges for electric field tuning are given for the above five crystals.

ISSN:0003-6951    

DOI:10.1063/1.88281

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Doppler‐free electronic state absorption spectra of molecules have been recorded by means of counterpropagating‐beam two‐photon spectroscopy. The molecular transitions that were investigated were theA2&Sgr;+1(v=0) ←X2&Pgr;1/2(v=0) transition of nitric oxide and the1B2u←1A1g, 1410transition of benzene. Linewidths observed were less than the Doppler width for each transition.

ISSN:0003-6951    

DOI:10.1063/1.88282

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Stabilized pulsed corona‐type discharges can be used to pump uv laser efficiently at high pressures and on nanosecond time scales. This letter deals with the adaptation of this principle to the excitation of molecular nitrogen lasers at pressures ranging from 0 to 3 bar. Magewatt pulses of nanosecond duration may be obtained from a simple 25‐cm atmospheric‐pressure device. The electrical excitation is effected by a flat‐plate Blumlein circuit.

ISSN:0003-6951    

DOI:10.1063/1.88283

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A strip‐waveguide electro‐optic phase modulator has been fabricated in Ti‐diffused LiNbO3. For a modulation index of 1 rad at 0.63 &mgr;m, the modulating voltage is 0.3 V and the power is 1.7 &mgr;W/MHz of bandwidth.

ISSN:0003-6951    

DOI:10.1063/1.88284

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A new laser operating on the 342‐nm band of I2is reported. Electron‐beam‐excited mixtures of argon with CF3I and HI produced this I2laser. The excited state of this laser is probably formed by ion recombination reactions, and a plausible mechanism is given.

ISSN:0003-6951    

DOI:10.1063/1.88285

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

The dc conductance of Langmuir films of the Cd salts of fatty acids CH3‐ (CH2)n‐2‐COOH, with variousn, has been measured at liquid‐nitrogen temperature. The conductivity decreases exponentially with increasing chain length of the fatty acid molecules. This agrees well with the theoretical prediction for hopping conduction in a multilayer system associated with interface states.

ISSN:0003-6951    

DOI:10.1063/1.88286

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Double‐heterostructure (DH) injection lasers based on the GaAs1−xSbx/AlyGa1−yAs1−xSbx@qLsystem have been fabricated using liquid phase epitaxial growth techniques and operated at room temperature at wavelengths in the 1‐&mgr;m region. The observed room‐temperature threshold current densities, as low as 2100 A cm−2, are comparable to those of GaAs/AlGaAs devices of similar geometry.

ISSN:0003-6951    

DOI:10.1063/1.88287

出版商:AIP    

年代:1975

数据来源: AIP