11. |
Tunable InGaAs/GaAs/InGaP laser |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1219-1220
N. K. Dutta,
W. S. Hobson,
J. Lopata,
G. Zydzik,
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摘要:
The fabrication and performance characteristics of a tunable InGaAs/GaAs/InGaP laser emitting near 980 nm are reported. The tunability is achieved using the thermoelectric effect of the substrate. A tuning range of>6nm has been demonstrated using∼60mA of thermoelectric controller current. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118534
出版商:AIP
年代:1997
数据来源: AIP
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12. |
Thickness variation compensation in a Fabry–Perot modulator array using a self-tuned Fabry–Perot structure |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1221-1223
Phil Harvey,
Sadik Esener,
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摘要:
A method is presented for compensating cavity thickness variations in conventional Fabry–Perot devices through the replacement of the input mirror with a holographic mirror, resulting in a self-tuned Fabry–Perot (STFP) device. The technique is suitable for integrating large arrays of electro-optic Fabry–Perot modulators with silicon circuitry. Experimental results of a STFP modulator are presented showing cavity thickness compensation of an electrooptic 9/65/35 bulk lead lanthanum zirconate titanate crystal having thickness variations corresponding to∼6Fabry–Perot fringes in a2.5×2.5mm2area. The compensated modulator used anin siturecorded Fe-doped LiNbO3holographic mirror, and had a uniform backreflection over a2.5×2.5mm2area. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118535
出版商:AIP
年代:1997
数据来源: AIP
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13. |
Biphotonic self-diffraction in azo-doped polymer film |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1224-1226
Pengfei Wu,
Bingsuo Zou,
Xiaochun Wu,
Jiren Xu,
Xiong Gong,
Guilan Zhang,
Guoqing Tang,
Wenju Chen,
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摘要:
A new nonlinear optical phenomenon, biphotonic self-diffraction (BSD), is reported in azo dye doped in polymer matrix. The first-order and the second-order BSD signals are observed in the experiment. It is demonstrated that the dynamic behaviors of the BSD signals are dependent on thecis-transisomerization of azo molecules by two color lights. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118536
出版商:AIP
年代:1997
数据来源: AIP
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14. |
Demonstration of a frequency-modulated, pulsed optical parametric oscillator |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1227-1229
D. J. Armstrong,
A. V. Smith,
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摘要:
We demonstrate that injection seeding a pulsed optical parametric oscillator with frequency modulated cw light with a modulation period equal to the cavity round-trip time produces pulses that have the same modulated character as the seed. A sensitivity of10−3was demonstrated for these pulses in frequency-modulated absorption measurements. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118537
出版商:AIP
年代:1997
数据来源: AIP
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15. |
Optical amplification with neodymium-doped chalcogenide glass fiber |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1230-1232
Atsushi Mori,
Yasutake Ohishi,
Terutoshi Kanamori,
Shoichi Sudo,
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摘要:
Optical amplification at 1.083&mgr;m with neodymium-doped chalcogenide fiber is observed. The thermal and spectroscopic properties of a new chalcogenide glass system are measured in view of its potential use as a rare-earth host. A maximum internal gain of 6.8 dB is achieved for a pump power of 180 mW. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118538
出版商:AIP
年代:1997
数据来源: AIP
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16. |
Fabrication and electroluminescence of double-layered organic light-emitting diodes with theAl2O3/Alcathode |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1233-1235
F. Li,
H. Tang,
J. Anderegg,
J. Shinar,
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摘要:
The effects of a controlledAl2O3buffer layer on the behavior of highly efficient vacuum evaporated aqua regia-treated indium tin oxide (ITO)/triphenyl diamine (TPD)/8-tris-hydroxyquino-line aluminumAlq3/Al2O3/Allight-emitting diodes are described. It is found that, with a buffer layer of suitable thickness, both current injection and electroluminescence output are significantly enhanced. The enhancement is believed to be due to increased charge carrier density near theTPD/Alq3interface that results from enhanced electron tunneling, and removal of exciton-quenching gap states that are intrinsic to theAlq3/Al interface. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118539
出版商:AIP
年代:1997
数据来源: AIP
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17. |
Micromachined aperture probe tip for multifunctional scanning probe microscopy |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1236-1238
W. Noell,
M. Abraham,
K. Mayr,
A. Ruf,
J. Barenz,
O. Hollricher,
O. Marti,
P. Gu¨thner,
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摘要:
A novel micromachined aperture tip has been developed for near-field scanning optical microscopy. The advantages of the new probe over commonly used fiber probes are illustrated. The aperture tip is fabricated in a reliable batch process which has the potential for implementation in micromachining processes of scanning probe microscopy sensors and therefore leads to new types of multifunctional probes. For evaluation purposes, the tip was attached to an optical fiber by a microassembly setup and subsequently installed in a near-field scanning optical microscope. First measurements of topographical and optical near-field patterns demonstrate the proper performance of the hybrid probe. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118540
出版商:AIP
年代:1997
数据来源: AIP
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18. |
Atomic hydrogen enhanced reflow of copper |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1239-1241
T. Miyake,
H. Petek,
K. Takeda,
K. Hinode,
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摘要:
A low temperature technique for copper metallization using sputter-reflow process is investigated. Metallization of 0.15–1.5 &mgr;m prepatterned trenches at a temperature of 320 °C by atomic hydrogen enhanced reflow of sputtered Cu films is described. Debye temperature of a single crystal Cu(110) surface measured by He atom scattering indicates that surface H reduces the surface Cu–Cu bonding strength. Moreover, atomic H efficiently removes oxygen and carbon impurities from the sputtered Cu films at surface temperatures of >150 °C. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118541
出版商:AIP
年代:1997
数据来源: AIP
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19. |
Grain boundary misorientation angles and stress-induced voiding in oxide passivated copper interconnects |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1242-1244
J. A. Nucci,
R. R. Keller,
D. P. Field,
Y. Shacham-Diamand,
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摘要:
Grain boundary misorientations were determined by electron backscattering diffraction for tantalum-encapsulated, copper interconnects which contained thermal-stress-induced voids. The misorientation angles at voided and unvoided line segments were analyzed for two differently heat treated sample types, which were not equally susceptibile to stress voiding. Unvoided line segments contained a larger percentage of low misorientation angle, lower diffusivity boundaries than regions adjacent to voids. In addition, the more void resistant sample type also contained an overall higher proportion of low misorientation angle boundaries than the sample type which exhibited more voiding. The data provide further support for the importance of local variations in microstructure, which control the kinetics of stress void formation and growth. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118942
出版商:AIP
年代:1997
数据来源: AIP
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20. |
Low-temperature nitriding of iron through a thin nickel layer |
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Applied Physics Letters,
Volume 70,
Issue 10,
1997,
Page 1245-1247
D. K. Inia,
M. H. Pro¨pper,
W. M. Arnoldbik,
A. M. Vredenberg,
D. O. Boerma,
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摘要:
We present a new method for nitriding iron at low temperatures. First, iron is coated with a thin layer of nickel(∼36 nm), after which it is exposed to anNH3 atmosphere at temperatures below 300 °C. Underneath the nickel layer&egr;-Fe3−xNis formed at temperatures as low as 225 °C, while uncovered iron samples show a large uptake of oxygen after the same treatment. The nickel layer prevents the oxidation of iron by impurities in theNH3 gas, and acts as a catalyst for the decomposition ofNH3.After decomposition the atomic nitrogen diffuses through the nickel layer towards the iron. With the process described, pore-free iron nitrides can be formed at low temperatures. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.118542
出版商:AIP
年代:1997
数据来源: AIP
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