摘要:

The effect of electronic bombardment on metal‐polymer‐silicon structures is considered. The polymer film was obtained by polymerization of monomer vapor (styrene) in an ac glow discharge. The relative dielectric constant of the films is 3 and the dissipation factor is 0.01. Under 25‐keV electronic bombardment at various flux levels and with different polarizing voltages applied, the shifts of theC(V) curve are always in the opposite direction to that induced by the polarizing voltage. The displacement under irradiation is lower than observed with the metal‐silicon dioxide‐silicon structure. It is remarkable that the radiation effects are not permanent. The structures do not have any memory of irradiation constraints.

ISSN:0003-6951    

DOI:10.1063/1.1654569

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Thermally induced optical storage and erasure (local and nonlocal) of scattering centers in thin films of smectic liquid crystals has been demonstrated. These new thermo‐optic and electrothermo‐optic effects provide the basis for what is believed to be the first practical application of smectic liquid crystals, an infrared‐laser‐addressed light valve for the recording, storage, and display of high‐resolution graphic images.

ISSN:0003-6951    

DOI:10.1063/1.1654570

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Low‐duty‐cycle pulsed dc switching experiments have been performed on a variety of thin‐film Te‐based semiconducting glasses. No premonitory effects are observed in the current‐time profile of the nonswitching off state. If, however, the threshold voltage is exceeded, a continuous current increase with time throughout the normal delay‐time regime (preswitching off state) is always observed prior to switching. In a given device or film this current rise is interrupted, independent of overvoltage, by the rapid switching transition at about the same relative current increment above the current background extrapolated to zero time (leakage current). In the switched or on (filamentary conduction) state the current level, as limited by the series load resistor, can condition the response of the device in the subsequent preswitched off state. For loads in excess of ∼1 k&OHgr;, there is no effect on the preswitching off state characteristics whereas, for appreciably smaller loads, there is a continuous increase in delay time with increased pulse length (time spent in the previous on state). The results (i) indicate that the development of a filamentary instability begins at the onset of the pulse and (ii) show that the operating threshold voltage can be raised (returned to its virgin value) when the operating current is large for a sufficiently long time. These features are consistent with switching models that treat the ``formed'' switching element as a high‐conductance‐formed filamentary region (of not necessarily uniform composition) surrounded by a low‐conductivity glass.

ISSN:0003-6951    

DOI:10.1063/1.1654571

出版商:AIP    

年代:1973

数据来源: AIP