摘要:

The radiative lifetime in GaAs1−xPxlight‐emitting diodes is observed to increase from 2 to 11 nsec with increasing injection level. A related increase in quantum efficiency is also observed. These observations are explained by using a trap‐filling model, where the traps arise from defects in the epitaxially grown GaAs1−xPx.

ISSN:0003-6951    

DOI:10.1063/1.1654927

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Experiments have been conducted on high‐pressure Xe gas undergoing excitation by a high‐current pulsed relativistic electron beam. Spectral, temporal, and calorimetric diagnostics were performed. The results establish that lasing in molecular Xe has been achieved with the highest laser power yet obtained in the vacuum ultraviolet. Premature termination of light output indicates the possibility of significant effects due to thermal collisions.

ISSN:0003-6951    

DOI:10.1063/1.1654928

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Fused SiO2has been used as a new noncrystalline host for the fabrication of two types of neodymium‐doped room‐temperature lasers, one of which operates at 1.06‐&mgr;m and the other at 1.08‐&mgr;m wavelength. The lasers have the geometry of clad optical fibers, with active cores as small as 15‐&mgr;m diameter by 1‐cm length. They are end pumped at 0.590 and 0.5145 &mgr;m with a pulsed dye laser and an argon ion laser, respectively. Thresholds as low as 1–2 mW of absorbed pump power in a 40‐&mgr;m‐diam core have been obtained, and eventual pumping with high‐radiance semiconductor optical sources appears feasible.

ISSN:0003-6951    

DOI:10.1063/1.1654929

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The average room‐temperature electron conductivity mobility &mgr;cin silicon measured at ultrahigh frequencies was found to be approximately 30% higher than the average drift mobility reported in the literature for bulk samples with identical resistivity. The discrepancy is attributed to the minimized effect of traps in silicon at ultrahigh frequencies where the period of the rf signal is considerably shorter than the lifetime of the traps.

ISSN:0003-6951    

DOI:10.1063/1.1654930

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The threshold power for CO2‐laser‐induced gas breakdown in helium has been studied at many pressures in the range of 50–700 Torr by using laser pulses of two different lengths. These measurements show that electron diffusion losses play an important role at these pressures. The experimental data can be quantitatively accounted for by taking into account both diffusion losses and the finite length of the laser pulse. In addition, it is found that the breakdown threshold power is significantly lowered when longer laser pulses are used and that elastic losses appear to play an important role at pressures above 500 Torr.

ISSN:0003-6951    

DOI:10.1063/1.1654931

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A theoretical analysis of the effect of the pumping light on the Rb87maser frequency is summarized. Experimental results obtained on such a maser are given and are found to agree with the theory. A new method of tuning the maser cavity for a light‐independent frequency setting (LIFS) is proposed.

ISSN:0003-6951    

DOI:10.1063/1.1654932

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Metal silicon‐nitriden‐p+silicon diodes have been fabricated withI‐Vcharacteristics similar to those of a four‐layer diode. Switching between the two impedance states, whose impedance levels differ by a factor of the order of 106, can be accomplished in less than 5 nsec. The impedance of the device is controlled by the presence or absence of the inversion layer of the MIS structure. Both impedance states require a nonzero conductance of the insulator.

ISSN:0003-6951    

DOI:10.1063/1.1654933

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The effects of ionizing radiation (gamma) on the operation of two‐phase stepped‐oxide surface‐channel charge‐coupled devices (CCD's) were studied. For total doses up to 105rad (Si), the primary cause of changes in CCD operation is a negative shift in the flat‐band voltage, with the flat‐band voltage shift for the polysilicon electrodes being greater than that for the aluminum electrodes. For fixed applied voltages, the flat‐band voltage shifts cause (i) an increase in transfer inefficiency due to the cutoff of fat zero, and (ii) a decrease in the full‐well capacity due to the modified surface potential profile. Up to 105rad, the preirradiation transfer inefficiency could be recovered by changing the input‐gate voltage to compensate for the flat‐band voltage shift. Up to 105rad, no significant effects due to radiation‐induced interface states were observed; however, at 3 × 105rad, increases in transfer inefficiency and dark current attributed to radiation‐induced interface states were observed.

ISSN:0003-6951    

DOI:10.1063/1.1654934

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Efficient low‐loss optical waveguides have been made with the growth of only a single epilayer of Ga1−xAlxon GaAs substrates. The AlAs concentration gradient which is grown by liquid‐phase epitaxy using thin gallium melts is the cause of the guiding.

ISSN:0003-6951    

DOI:10.1063/1.1654935

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The sensitivity‐switched holographic memory of Te&sngbnd;Ge&sngbnd;As amorphous semiconductor film was investigated. The sensitivity of the film can be enhanced only in writing by bias voltage switching. Holograms were easily stored with the simultaneous application of bias voltages and low‐power laser beams. Coupled with optoelectronic hybrid systems, these amorphous materials are expected to be useful for laser information processing.

ISSN:0003-6951    

DOI:10.1063/1.1654936

出版商:AIP    

年代:1973

数据来源: AIP