摘要:

The spectral dependence of the photoluminescence and the time decay of the cathodoluminescence are reported for CdSnP2single crystals for 1.7 <T<300°K. We find that the room‐temperature band gap lies very close to the 1.06&mgr; Nd:YAG laser emission indicating that CdSnP2may be useful as a room‐temperature detector or for other optical devices such as limiters or passiveQ‐switchers. We report photoconductivity and photovoltage measurements which support these suggestions.

ISSN:0003-6951    

DOI:10.1063/1.1653224

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

An efficient optoelectronic cold cathode has been made which includes a Si‐compensated AlxGa1−xAs electroluminescent diode covered with an absorbingp‐type GaAs layer having a negative electron affinity surface. This structure is designed to minimize current crowding in the vicinity of the Ohmic contact. An over‐all efficiency of 1.1×10−3(current emitted into vacuum/diode current) has been achieved. This represents a factor of 102–103improvement over previousp‐njunction or optically coupled cold cathode structures.

ISSN:0003-6951    

DOI:10.1063/1.1653225

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Self‐phase modulation of laser beams by media which possess a temperature‐dependent refractive index gives rise to far‐field aberrational rings. Steady‐state aberration profiles were measured and quantitative agreement with theory was obtained. A simple qualitative explanation of the ring structure is given. A self‐induced frequency modulation of 1.5‐W argon laser pulses was also observed and chirping detected.

ISSN:0003-6951    

DOI:10.1063/1.1653226

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

The first measurements of electron transport inn‐type alloys of GaP with 5% ZnSe show evidence for strong ionized impurity scattering at room temperature in the temperature dependence of the mobility. However, this scattering requires only about 10% of the Zn and Se atoms to be charged centers, and thus suggests that most of the ZnSe present contributes weakly (perhaps as dipole centers) to the scattering. Hall mobilities of 0.23 cm2/V sec at 77°K and 6.2 cm2/V sec at 300°K were measured.

ISSN:0003-6951    

DOI:10.1063/1.1653227

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Q‐switching of three lines of N2O and CO210&mgr; lasers has been achieved by the Stark effect of ammonia.

ISSN:0003-6951    

DOI:10.1063/1.1653228

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

While Cs2O‐coated III‐V semiconductors can have Kelvin work functions as low as 0.7 eV, the long‐wavelength threshold for efficient photoemission is determined by a significantly higher barrier at the heterojunction between the Cs2O and the semiconductor. This barrier is 1.23±0.03 eV for Cs2O on GaSb. For Cs2O on silver, the barrier height is 1.0 eV.

ISSN:0003-6951    

DOI:10.1063/1.1653229

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.1653230

出版商:AIP    

年代:1970

数据来源: AIP