11. |
Stabilization of InP substrate under annealing in the presence of GaAs |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 481-483
M. Sacilotti,
R. A. Masut,
A. P. Roth,
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摘要:
We report on the annealing of InP and GaAs substrates, placed side by side, in a hydrogen atmosphere. This annealing is done with and without arsine, and also in the presence of elemental arsenic replacing GaAs. This simple technique shows the stabilization of InP by the presence of GaAs in a temperature range between 550 and 750 °C. It gives information about active species present during substrate annealing. The results obtained show that the protecting species of column V elements, dimers or tetramers, behave differently than the ones resulting from the decomposition of the V hydride.
ISSN:0003-6951
DOI:10.1063/1.96536
出版商:AIP
年代:1986
数据来源: AIP
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12. |
PnpGaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 484-486
N. Chand,
J. Klem,
H. Morkoc¸,
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摘要:
In order to exploit the potential of GaAs/Ge heterojunctions for high‐speed heterojunction bipolar transistors and hot‐electron transistors, aPnpGaAs/Ge floating base phototransistor, sensitive to 1.1–1.55‐&mgr;m wavelength range, was made. The gallium‐doped Ge substrate was first exposed to the As2flux in the growth chamber of a molecular beam epitaxy system to form apnjunction in Ge. This was followed by the growth of ap‐type Be‐doped GaAs layer which served as the emitter. The fabricated mesa devices showed an optical gain of 85 at 1.15 &mgr;m incident wavelength. The gain was found to be nearly independent of the incident light power indicating good quality of the GaAs/Ge heterointerface.
ISSN:0003-6951
DOI:10.1063/1.96483
出版商:AIP
年代:1986
数据来源: AIP
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13. |
Proposed structure for large quantum interference effects |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 487-489
S. Datta,
M. R. Melloch,
S. Bandyopadhyay,
M. S. Lundstrom,
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摘要:
In this letter we propose and analyze a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications.
ISSN:0003-6951
DOI:10.1063/1.96484
出版商:AIP
年代:1986
数据来源: AIP
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14. |
Surface defect segregation in the perovskite‐type ferroelectric KNbO3 |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 490-492
K. Szot,
F. U. Hillebrecht,
D. D. Sarma,
M. Campagna,
H. Arend,
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摘要:
Electron spectroscopic investigations are used to show that defects at various concentrations are inherently present on surfaces of KNbO3crystals. Their concentration at the surface is determined by the bulk concentration as well as by diffusion. These defects are important for most classical measurements on KNbO3and similar materials.
ISSN:0003-6951
DOI:10.1063/1.96485
出版商:AIP
年代:1986
数据来源: AIP
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15. |
UV laser deposition of metal films by photogenerated free radicals |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 493-495
R. K. Montgomery,
T. D. Mantei,
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摘要:
Silver, copper, and palladium films have been deposited by UV laser‐induced reduction of metal ions in solution. Metal lines have been written and metal pattern generation by projection imaging has been demonstrated.
ISSN:0003-6951
DOI:10.1063/1.96486
出版商:AIP
年代:1986
数据来源: AIP
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16. |
Waveguiding effects in laser‐induced aqueous etching of semiconductors |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 496-498
Dragan V. Podlesnik,
Heinz H. Gilgen,
Richard M. Osgood,
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摘要:
The rapid, ultraviolet‐induced aqueous etching produces vertical, high‐aspect features in GaAs samples of different crystal orientations. Much of the speed and anisotropy of the etching is attributed to the formation of efficient hollow, optical waveguides. These guides have been characterized by measuring the optical loss and the field distribution within the guide. The optical loss is typically small and does not restrict the etching of deep features.
ISSN:0003-6951
DOI:10.1063/1.96487
出版商:AIP
年代:1986
数据来源: AIP
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17. |
Use of infrared fibers for low‐temperature radiometric measurements |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 499-500
A. Zur,
A. Katzir,
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摘要:
Silver halide (AgClxBr1−x) infrared fibers were incorporated in a simple radiometer. Using this system we performed noncontact temperature measurements in the range 25–50 °C. Good correlation was found between the radiometric results and those obtained with a regular thermocouple. The minimum resolvable temperature difference was 0.1 °C and the spatial resolution was 0.9 mm.
ISSN:0003-6951
DOI:10.1063/1.96488
出版商:AIP
年代:1986
数据来源: AIP
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18. |
Erratum: Optical nonlinearity resulting from mobile carriers in semiconductor superlattices: Influence of higher minibands [Appl. Phys. Lett.47, 1260 (1985)] |
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Applied Physics Letters,
Volume 48,
Issue 7,
1986,
Page 501-501
C. M. de Sterke,
D. G. Hall,
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ISSN:0003-6951
DOI:10.1063/1.97034
出版商:AIP
年代:1986
数据来源: AIP
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