摘要:

Tritiated ethanol is adsorbed on the surface of silicon oxide, the oxide is metallized to form an MOS capacitor, and an electric field is applied at elevated temperature to generate ion injection into the oxide film. It is shown that during positive bias‐temperature stress, protons, derived from the hydrogens of the ethanol, are transported to the oxide‐silicon interface, and that sodium ion transport (examined via neutron activation analysis) is negligible.

ISSN:0003-6951    

DOI:10.1063/1.1755051

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

A method has been developed to measure the single‐pass gain of superradiant high‐gain pulsed lasers by comparing the intensities of single‐pass and double‐pass radiation. This method is used on the 7229 Å transition in Pb I and gives a maximum single‐pass gain of 63 dB in a 10 cm effective length of lead vapor. The gain is confirmed by line‐narrowing measurements and by power output measurements that are related to the theoretical intensities.

ISSN:0003-6951    

DOI:10.1063/1.1755052

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Twenty‐four superradiant lines from a pulsed discharge in neon, argon, krypton, and xenon are reported in the wavelength region 8000–29,000 Å. All the lines have been classified as transitions in the neutral spectra. The upper levels are expected to be populated by electron impact or by cascade processes.

ISSN:0003-6951    

DOI:10.1063/1.1755053

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The oriented growth of the interfacial PtSi layer between Pt and Si is described. Sputtered Pt onto the (111) Si wafer reacts with Si above 600°C to form PtSi. The interfacial PtSi has the preferred orientation characteristic of the temperature of heat treatment, varying the orientation from [101] at 600°C and 700°C, through [121] at 750°C, to [001] at 800°C. A possible growth mechanism of the interfacial PtSi is proposed on the basis of the atomic layer sequence of each crystallographic direction.

ISSN:0003-6951    

DOI:10.1063/1.1755035

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

In this Letter we discuss the observation of a pattern of concentric annuli formed as a result of thermal effects upon a light beam. To our knowledge, this is the first time such patterns have been reported.When a beam of light passes through an absorbing medium whose refractive index decreases as a function of temperature, the medium behaves as a negative lens. Gordon et al.1observed this phenomenon by placing a cell containing an absorbing liquid between the mirrors of a helium‐neon laser. The absorption constants for several liquids with very low absorbencies have been determined using this effect.2Rieckhoff3measured the increase in the diameter of a light beam that passed through a thermal self‐defocusing liquid placed external to the laser inter‐ferometer. Recently Leite et al.4demonstrated that this effect may be used as a power limiting device.

ISSN:0003-6951    

DOI:10.1063/1.1755036

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air‐silicon dioxide and silicon dioxide‐silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.

ISSN:0003-6951    

DOI:10.1063/1.1755037

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Direct excitation from the metastable 3p5‐4sstate of A I to 3p4‐4pupper laser state of A II is compared with the two‐step excitation from the same metastable state.

ISSN:0003-6951    

DOI:10.1063/1.1755038

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

An in‐situ low‐energy electron diffraction (LEED) study has been made of the homoepitaxial growth in ultrahigh vacuum of silicon films up to several microns thickness. During growth on (111) at temperatures between 600 and 1000°C the initial Si(111)‐7 surface structure of the substrate is retained by the epitaxial film. Below 600°C a mixed Si(111)‐7 and Si(111)‐5 structure develops in the initial stages of growth and for a given temperature, is preserved as epitaxy proceeds. At temperatures lower than 350°C the LEED data indicate that the film structure becomes amorphous. Epitaxy on (100) occurs at temperatures down to about 300°C. In this case the initial Si(100)‐2 surface structure is retained by the film except in the range 650 to 700°C, where a new ordered form of the Si(100)‐2 structure is generated.

ISSN:0003-6951    

DOI:10.1063/1.1755039

出版商:AIP    

年代:1967

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.1755040

出版商:AIP    

年代:1967

数据来源: AIP