摘要:

The Hall effect in thin films of reactively sputtered Cu2S was measured at temperatures from 90 to 300 °K. The hole concentration ranged from 1018to 2×1019cm−3. The hole mobility ranged from 5.5 to 9 cm2/V s. The predominant scattering mechanisms are ionized impurity scattering atT<100 °K and optical phonon scattering atT≳100 °K.

ISSN:0003-6951    

DOI:10.1063/1.91222

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Effects of InP substrate orientation on InxGa1−xAs vapor‐phase epitaxial growth are studied. The fractional compositionxof the grown layer on (100) substrate is smaller than for (111)Bat identical growth temperatures and gas flow rates. The In contentxdecreases with increasing temperature. Growth rate, carrier concentration, and carrier mobility depend on substrate orientation. Growth on (100) substrates at temperatures above 710°C is suitable for obtaining smooth surface layers with low carrier concentration and high mobility.

ISSN:0003-6951    

DOI:10.1063/1.91223

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

LiNbO3thin films doped with Na+and Co2++ Zr4+have been obtained by the liquid‐phase epitaxial (LPE) technique from Li2O‐V2O5flux. X‐ray diffraction studies indicated that the films had a high single crystallinity with good epitaxy. The Na+and Co2++Zr4+doped LiNbO3films showed a reduction in the temperature coefficient of surface acoustic wave velocity.

ISSN:0003-6951    

DOI:10.1063/1.91224

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Defect annihilation has been observed in silicon as a result of laser annealing using aQ‐switched ruby laser. The threshold pulse energy density for defect annihilation was found to be 1 J/cm2(pulse length ∼25 ns), and the depth of the defect‐free region was found to increase with increasing pulse energy. A thermal model was developed which predicts the depth of melting and the recrystallization velocity. The calculated depth of melting was found to be in good agreement with the experimentally determined depth of defect annihilation. The defect annihilation occurs as a direct result of the extremely high recrystallization velocities which are associated with laser annealing with short pulses.

ISSN:0003-6951    

DOI:10.1063/1.91225

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The transport of polycrystalline silicon into an overlying aluminum film and silicon regrowth in the metal medium under heating at 500 °C was examined as a function of doping level and grain size of the silicon. Such regrowth was eliminated through phosphorus doping and was substantially reduced for increased grain size. These results are consistent with a mechanism of silicon grain‐boundary transport in the films. The necessity for a silicon oxide layer at the aluminum‐silicon interface, if regrowth is to occur, is also indicated.

ISSN:0003-6951    

DOI:10.1063/1.91226

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Alloying of Au films on Cr‐doped GaAs substrates and Sn‐doped LPE layers grown on semi‐insulating substrates has been investigated by TEM and SIMS profiling. Annealing at 350 °C for variable periods was found to produce rapid outdiffusion of Cr into regions of near‐surface damage induced by strain effects at the interface and subsequent diffusion of Au into the GaAs.

ISSN:0003-6951    

DOI:10.1063/1.91227

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2beams by MBE on to (100) InP substrates has been determined to be 100–405 °C. Above 410 °C whisker growth from In droplets via a vapor‐liquid‐solid process occurs; below 95 °C polycrystalline layers result on account of the nondissociation of P2.

ISSN:0003-6951    

DOI:10.1063/1.91228

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Short‐channel MOS FET’s are successfully fabricated usingQ‐switched ruby laser irradiation on As‐implanted sources and drains. Implantation and laser irradiation are both self‐aligned by the polysilicon gate electrodes. The threshold‐voltage–vs–channel‐length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

ISSN:0003-6951    

DOI:10.1063/1.91229

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Aluminum nitride and silicon nitride films were deposited on lightly dopedn‐type GaAs : Si by low‐energy ion beam sputtering. Mechanically, the films were stable at annealing temperatures above 900 °C. In contrast to bare GaAs and previously reported encapsulation with Si3N4, where the 1.36‐eV line appears at relatively low annealing temperatures, there was no change in the photoluminescence spectrum until the samples were annealed at 800 °C in the case of aluminum nitride and 900 °C for silicon nitride.

ISSN:0003-6951    

DOI:10.1063/1.91211

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Silicon films were deposited when silane was irradiated with a pulsed CO2laser. This laser‐induced vapor deposition occurs effectively when the laser is tuned to an absorption frequency of SiH4. Efficiency was so high that an unfocused beam of 1.3 MW/cm2sufficed. Any thermal effects are ruled out. Deposition is induced efficiently at gas pressures above 100 Torr, indicating that a collision‐aided process is involved.

ISSN:0003-6951    

DOI:10.1063/1.91230

出版商:AIP    

年代:1979

数据来源: AIP