摘要:

The annealing behavior of Si crystals, implanted with ∼1015Sb ions/cm2at 40 keV, has been studied by observing the orientation dependence of the scattering yield of 1.0‐MeV protons and also by electrical measurements. The scattering measurements provide information on the sites of the implanted atoms and on the extent of lattice disorder. After a room temperature implant, the lattice is heavily damaged, with the Sb occupying random (or interstitial) positions. After annealing at 650°C, ∼75% of the Sb is substitutional with very little damage remaining. Comparable results are obtained in a 400°C implant.

ISSN:0003-6951    

DOI:10.1063/1.1754830

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Two infrared absorption bands attributed to substitutional boron‐phosphorus pairs in silicon are observed. The bands are close to the single, isolated boron band and all show approximately the same frequency shift with change in boron isotope. The pair bands occur near 599.7 and 629 cm−1for11B and 622.9 and ∼655 cm−1for10B. The results are compared with the theory of Elliott and Pfeuty. The number of pair bands, their isotope shift, and their proximity to the isolated B band are in agreement with theory. The &Dgr;&ngr; ∼ 30 cm−1is an order of magnitude larger than predicted by the isotopic model indicating changes in force constants.

ISSN:0003-6951    

DOI:10.1063/1.1754831

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The effect of localized uniaxial force (exerted by a hemispherical stylus) on the voltage‐current relationship of Au‐KTaO3Schottky barrier diodes is described. Pronounced reversible changes were observed and characterized by stress‐induced decreases of up to 0.8 eV in the metal‐semiconductor barrier height. The observed diodenvalues [n≡ (q/kT)(dV/dlnJ)] at 300°K ranged from 1.05 to 1.10. This indicates that thermionic field emission may be the dominant current flow mechanism. An analysis of the pressure profile produced by the stylus yields 4 × 10−11V‐cm2/dyn for the pressure sensitivity of the barrier height.

ISSN:0003-6951    

DOI:10.1063/1.1754832

出版商:AIP    

年代:1967

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.1754833

出版商:AIP    

年代:1967

数据来源: AIP