摘要:

The results obtained from a comprehensive theoretical model for an electrically excited laser are compared with experimental data obtained from a large‐volume KrF laser device, excited by an e−‐beam only, or with enhancement from an electric discharge.

ISSN:0003-6951    

DOI:10.1063/1.89954

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

In this letter we report on measurements of the ion‐ion recombination rate constant for the reaction Kr++F−+(M) →KrF*+(M) at pressures below 300 Torr. The rate constant is determined from the shape of the KrF*B 2&Sgr;→X 2&Sgr; fluorescence. The two‐body quenching of KrF* by F2has also been measured and the rate constant was found to be 7.8×10−10cm3/sec. The two‐body quenching of KrF* by Kr is negligible, while the three‐body quenching by 2Kr was measured to be 6.7×10−31cm6/sec. In evaluating the rate constants quoted above we have used the Dunning and Hay radiative lifetime for KrF* of 6.5 nsec.

ISSN:0003-6951    

DOI:10.1063/1.89955

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We describe techniques for producing high‐aspect‐ratio vertical‐walled relief gratings of 1600 A˚ linewidth with smooth line edges in SiO2and Si substrates. Soft x‐ray lithography (13.3–44.7 A˚) is first used to expose such structures in PMMA. Liftoff of chromium and reactive sputter etching in CHF3gas are then used to transfer the structure into the SiO2.

ISSN:0003-6951    

DOI:10.1063/1.89956

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The full hyperfine components of theR(127) line in the 11‐5 band and the 10 components of theP(33) line in the 6‐3 band of theB←Xelectronic transition of127I2were observed by the saturated absorption spectroscopy using a complex resonator He‐Ne laser. The frequency of the laser was locked to each component and the frequency separations of the components were precisely measured. The hyperfine structure of theR(127) line was compared with a model which included both a nuclear electric quadrupole and magnetic hyperfine interactions.

ISSN:0003-6951    

DOI:10.1063/1.89957

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The diffusion mechanism of arsenic implanted into silicon dioxide is studied by the MeV He+backscattering method. The diffusion coefficient of elemental arsenic in silicon dioxide is extremely small, i.e., smaller than 1×10−17cm2/sec at 1200°C. The arsenic diffusivity in silicon dioxide is enhanced by introducing extra oxygen into silicon dioxide from an oxidizing atmosphere or by additional oxygen implantation. Arsenic interacts with the extra oxygen, and an arsenic‐oxygen compound might be formed which has a much larger diffusivity than elemental arsenic.

ISSN:0003-6951    

DOI:10.1063/1.89941

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The facet deterioration of (AlGa)As DH lasers by aging was analyzed by Auger electron spectroscopy in combination with Ar sputter etching. It was found that oxide was formed on the laser facet during cw operation, and the oxidation degraded lasers not only in long‐term operation but also even at an early stage of operation.

ISSN:0003-6951    

DOI:10.1063/1.89942

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Measurements of the anisotropy &dgr; (T) = (Hc2[100]−Hc2[110])/H¯c2of single‐crystal V3Si are presented which show that &dgr; (T) is small and essentially temperature independent for a variety of crystals with residual resistance ratios from 17 to 60. The effects of &dgr; on flux pinning in V3Si is much smaller than estimated earlier.

ISSN:0003-6951    

DOI:10.1063/1.89943

出版商:AIP    

年代:1978

数据来源: AIP