11. |
&Dgr;n=0.22birefringence measurement by surface emitting second harmonic generation in selectively oxidized GaAs/AlAs optical waveguides |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2587-2589
A. Fiore,
V. Berger,
E. Rosencher,
S. Crouzy,
N. Laurent,
J. Nagle,
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摘要:
We have measured the birefringence enhancement due to lateral selective oxidation of AlAs in GaAs/AlAs optical waveguides. The birefringence was measured by imaging the surface-emitted second harmonic generated by the nonlinear interaction of counterpropagating TE and TM modes. In a waveguide containing a single AlAs layer the birefringence is enhanced from&Dgr;n=0.017(before oxidation) to&Dgr;n=0.038(after oxidation). In an oxidized multilayer GaAs/AlAs waveguide, a birefringence as high as&Dgr;n=0.22is measured. This birefringence is sufficient to phase-match the difference frequency generation of 3–5 &mgr;m infrared radiation from two near-infrared pumps. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119336
出版商:AIP
年代:1997
数据来源: AIP
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12. |
Thermal lens determination of end-pumped solid-state lasers using primary degeneration modes |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2590-2592
Bernd Ozygus,
Qincheng Zhang,
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摘要:
A simple method using the singularities of an optical resonator to determine the thermal lens of end-pumped laser crystals is reported in this letter. At certain resonator parameters the transverse structures of the laser beam become a superposition of many transverse cavity modes of equal resonance frequencies. Because the resonator parameters depend on the thermally induced lens in the active medium, the strength of the lens can be determined by means of measuring the shift of the degeneration resonator length depending on the pumping power. The method is applied to an end-pumped Nd:YAG laser. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119337
出版商:AIP
年代:1997
数据来源: AIP
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13. |
Gas-source molecular beam epitaxy growth of an 8.5 &mgr;m quantum cascade laser |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2593-2595
S. Slivken,
C. Jelen,
A. Rybaltowski,
J. Diaz,
M. Razeghi,
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摘要:
We demonstrate preliminary results for an 8.5 &mgr;m laser emission from quantum cascade lasers grown in a single step by gas-source molecular beam epitaxy. 70 mW peak power per two facets is recorded for all devices tested at 79 K with 1 &mgr;s pulses at 200 Hz. For a 3 mm cavity length, lasing persists up to 270 K with aT0of 180 K. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119338
出版商:AIP
年代:1997
数据来源: AIP
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14. |
Temperature-dependent electroluminescence from (Eu, Gd) coordination complexes |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2596-2598
Xianmin Zhang,
Runguang Sun,
Qianbing Zheng,
Takayoshi Kobayashi,
Wenlian Li,
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摘要:
Light emission from single-layered electroluminescent devices is described in which (Eu, Gd) coordination complexes,(Eu0.1Gd0.9)(TTA)3(TPPO)2,and electron transport material oxadiazole derivative, 2-(4-biphenyl)-5-(4-t-butylphenylyl)-1,3,4-oxadiazole, are dispersed in a hole-transporting host polymer poly(N-vinylcarbazole) film. The color of the emitted electroluminescence changes smoothly from green-white to red with temperature varying from 77 to 300 K. This phenomenon is discussed in terms of temperature dependent yields of phosphorescence from the triplet state of the Gd and Eu chelates and the intermolecular energy transfer from Gd-chelate to Eu-chelate cages. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119339
出版商:AIP
年代:1997
数据来源: AIP
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15. |
Electro-optic birefringence in semiconductor vertical-cavity lasers |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2599-2601
R. F. M. Hendriks,
M. P. van Exter,
J. P. Woerdman,
A. van Geelen,
L. Weegels,
K. H. Gulden,
M. Moser,
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摘要:
Birefringence induced by the electro-optic effect is demonstrated in vertical-cavity surface-emitting lasers (VCSEL). This is done by comparing two types of optically pumped VCSELs: VCSELs with standard pin-doping and VCSELs with symmetrical pip-doping. The observed birefringence in these VCSELs differs by an order of magnitude, a difference that we ascribe to the presence and absence, respectively, of electro-optic birefringence. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119340
出版商:AIP
年代:1997
数据来源: AIP
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16. |
Pressure-induced blueshift ofNd3+fluorescence emission inYAlO3:Near infrared pressure sensor |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2602-2604
Hong Hua,
Yogesh K. Vohra,
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摘要:
Pressure-induced shift of fluorescence emission in garnets and other oxides is investigated for applications as optical pressure sensors. We report high pressure studies on the fluorescence emission from neodymium-doped yttrium aluminum perovskite(Nd3+:YAlO3)to 80 GPa at room temperature. Unusual nonlinear blueshift of wavelength with pressure was found for several fluores cence peaks in the wavelength region of 850–900 nm. These peaks are identified as the lines associated with transitionNd3+:4F3/2→4I9/2inYAlO3.The blueshift of these emissions is compared with the redshift of the same system in neodymium-doped yttrium aluminum garnet(Nd3+:Y3Al5O12).The shift with pressure is related to the change in the Stark level splitting with pressure. In view of the strong red emission from diamond anvils at ultrahigh pressures, this near infrared emission ofNd3+:YAlO3holds promise as an ultrahigh pressure sensor. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119341
出版商:AIP
年代:1997
数据来源: AIP
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17. |
Enhanced harmonic emission from ionized clusters in intense laser pulses |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2605-2607
S. X. Hu,
Z. Z. Xu,
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摘要:
We present a two-dimensional model to simulate the enhanced harmonic emission from ionized argon clusters irradiated by an ultrashort(∼25 fs) laser pulse at moderate intensity(∼1014 W/cm2). The low-order harmonics (below the 15th) are enhanced by nearly two orders of magnitude relative to those of monomer argon. Furthermore, the harmonic plateau is extended to a higher frequency. The clustering environment is responsible for the enhancement of harmonic emission. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.119342
出版商:AIP
年代:1997
数据来源: AIP
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18. |
Microscopic theory of gain for an InGaN/AlGaN quantum well laser |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2608-2610
W. W. Chow,
A. F. Wright,
A. Girndt,
F. Jahnke,
S. W. Koch,
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摘要:
This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.120155
出版商:AIP
年代:1997
数据来源: AIP
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19. |
Local atomic environment of Cu ions in ion-exchanged silicate glass waveguides: An x-ray absorption spectroscopy study |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2611-2613
F. D’Acapito,
S. Colonna,
S. Mobilio,
F. Gonella,
E. Cattaruzza,
P. Mazzoldi,
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摘要:
We present an x-ray absorption spectroscopy study at the CuKedge on Cu-doped soda-lime and BK7 glass waveguides obtained by ion exchange under various preparation conditions. The total electron yield and x-ray fluorescence yield collection modes were used to evidence the chemical behavior of surfacial and deep Cu ions. In all the samples copper is found preferentially asCu+throughout the whole exchanged region. The first coordination shell is formed by two to three oxygen atoms at 1.86 Å, much shorter than the Na–O bond (2.3 Å) in soda-lime glasses. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.120156
出版商:AIP
年代:1997
数据来源: AIP
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20. |
Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors |
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Applied Physics Letters,
Volume 71,
Issue 18,
1997,
Page 2614-2616
M. A. Hayashi,
S. L. Morelha˜o,
L. H. Avanci,
L. P. Cardoso,
J. M. Sasaki,
L. C. Kretly,
S. L. Chang,
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摘要:
A special case of the x-ray multiple diffraction phenomenon, the Bragg surface diffraction (BSD), has been investigated under lattice damage due to ion implantation in GaAs (001) samples. The BSD profile is very sensitive to the diffraction regime (dynamical or kinematical) and provides information regarding crystalline perfection and lattice strains in both directions—parallel and perpendicular—to the sample surface. Results from grazing-incidence x-ray diffraction and reciprocal space mapping are also reported. ©1997 American Institute of Physics.
ISSN:0003-6951
DOI:10.1063/1.120157
出版商:AIP
年代:1997
数据来源: AIP
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