摘要:

A simple theory shows that phase modulation on a pulse may be reversed in time (e.g., positive chirp to negative) by degenerate four‐wave mixing in an optically thin nonlinear medium. In thick media, the reflected pulse field is not truly time reversed, but is proportional to the time integral of the conjugate incident field.

ISSN:0003-6951    

DOI:10.1063/1.90050

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Minority‐carrier diffusion lengths in amphoteric GaAs : Si were investigated. Electron and hole diffusion lengths inpandntype respectively were determined to beLn=13 &mgr;m andLp=7 &mgr;m. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs : Sip‐njunctions indicated that these devices should make excellent solar cells.

ISSN:0003-6951    

DOI:10.1063/1.90051

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Highly efficientpGaSb‐nGa1−xAlxSb photodiodes were fabricated by liquid‐phase‐epitaxial growth of an undopedp‐type GaSb layer, followed by that of ann‐type Ga1−xAlxSb layer with a composition atx=0.7 on ap‐type (100) GaSb substrate. Spectral photocurrent response of the diodes measured at various bias voltages and room temperature was fairly flat between 1.0 and 1.7 &mgr;m. The external quantum efficiency of the photoresponse was 38% at zero bias and 54% at 1 V reverse bias in the vicinity of 1.2 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.90052

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A transfer of hydrogen from nitrogen to silicon bonds in CVD silicon nitride under N+and He+ion bombardment is reported. The amount of H transferred is a function of the ion energy deposited in atomic processes, and the thermal stability of the transferred H is comparable to that for H retained in Si‐H bonds during deposition. H transfer is proposed to explain previously reported electrical effects of bombardment‐anneal processing of Si3N4films, and an analogy to H passivation of Si dangling bonds in a‐Si is suggested.

ISSN:0003-6951    

DOI:10.1063/1.90053

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The sputter‐induced optical emission technique has been used to study the classical problem of the exchange of fluorine and hydroxyl ions in a solid. The hydroxyl ions were measured in the form of hydrogen atoms and detected by the characteristic hydrogen emission line at 6563 A˚ while the fluorine atoms were detected at 6902 A˚. Measurement of the optical intensities as a function of sputtering time produced the H and F depth profiles in GdF3films.

ISSN:0003-6951    

DOI:10.1063/1.90061

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A Schottky‐barrier‐gate buried‐channel GaAs CCD has been successfully demonstrated. A 10‐cell (30 gates) three‐phase device was operated at room temperature. The device employs a natural channel stop formed by the transfer gates extending from ann‐type active region onto a semi‐insulating GaAs substrate.

ISSN:0003-6951    

DOI:10.1063/1.90062

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The usefulness of guided wave optics as a tool for characterizing general purpose thin films is demonstrated in two cases of practical interest, i.e., silicon on sapphire and amorphous silicon on glass. Important results are as follows: (i) optical wave propagation at &lgr;=1.15 &mgr;m has been observed along a few millimeters in silicon layers; (ii) silicon on sapphire layers show a very high photoelastically induced quasiuniaxial birefringence (&Dgr;n≃0.02); (iii) amorphous silicon layers exhibit a nonrectangular index profile, a high birefringence (&Dgr;n≃0.02), and finally an anomalously low value of their mean ordinary index (n≃3.04±0.01).

ISSN:0003-6951    

DOI:10.1063/1.90063

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Data are presented on liquid‐phase epitaxial (LPE) GaxIn1−xPyAs1−yin the composition range (0.5<y<0.9) grown on InP substrates which indicate the nature of the compositional dependence of As and Ga distribution coefficients. The distribution coefficient functions when extrapolated to lattice‐matched compositional limits (y=0,1) are consistent with published data on those limits.

ISSN:0003-6951    

DOI:10.1063/1.90064

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Conversion efficiencies as high as 20% of AM1 have been obtained for single‐crystal GaAs shallow‐homojunction solar cells without Ga1−xAlxAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize ann+/p/p+structure with an antireflection coating prepared by anodic oxidation of then+layer.

ISSN:0003-6951    

DOI:10.1063/1.90065

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A three‐film superconducting tunneling device, analogous to a semiconductor transistor is presented, including a theoretical description and experimental results showing a current gain of 4. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor.

ISSN:0003-6951    

DOI:10.1063/1.90066

出版商:AIP    

年代:1978

数据来源: AIP