摘要:

A new transient mode of avalanche breakdown inp‐njunctions is described. For sufficiently high current, a region of impact ionization of carriers advances as a shock front whose velocity can be several times faster than the carrier‐saturated drift velocity. Since the passing disturbance rapidly fills the depletion region with a dense plasma of holes and electrons, it has been used to interpret the observed high‐efficiency microwave oscillations of the trapped‐plasma ``TRAPATT'' mode. An approximate analysis is given, and compared with numerical calculations.

ISSN:0003-6951    

DOI:10.1063/1.1652667

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The diffraction of light by ultrasound has been measured at 53 MHz in anthracene, naphthalene, and sugar. Anthracene is found to be more efficient than water in this respect while naphthalene and sugar are more efficient than lithium niobate. Acoustic attenuation has also been measured in anthracene over a frequency range of 10 to 150 MHz.

ISSN:0003-6951    

DOI:10.1063/1.1652668

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

General conditions of parametric excitation and parametric quenching of the longitudinal plasma waves involving negative energy wave(s) are derived by expressing the growth rate of these waves in terms of quantities involving only the linear plasma conductivities and the amplitude of density modulation by the pump.

ISSN:0003-6951    

DOI:10.1063/1.1652669

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The production of divacancies in Si by 400‐keV oxygen ion implantation (&PHgr;I= 1.75 × 1014cm−2, two sides) was detected by the characteristic divacancy optical absorption band at 1.8 &mgr;. This band has been previously correlated with the presence of divacancies in electron‐ and neutron‐irradiated silicon. Ion‐produced divacancy annealing near 200°C was observed to correlate with neutron‐produced divacancy annealing. Detailed comparisons of the annealing of electron‐, neutron‐, and ion‐produced divacancies suggest that the ion‐produced divacancies anneal primarily in regions with sink concentrations ≥ 1019cm−3.

ISSN:0003-6951    

DOI:10.1063/1.1652670

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Carrier wave instabilities in semiconductors having only one type of carriers (electrons) are described. These instabilities are shown to result from a nonuniformity in the electron drift velocity, and to occur only in the presence of a magnetic field. It is also shown that the mechanism that is responsible for the instability is the same whether the magnetic field be transverse or parallel to the direction of electron drift.

ISSN:0003-6951    

DOI:10.1063/1.1652672

出版商:AIP    

年代:1969

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.1652674

出版商:AIP    

年代:1969

数据来源: AIP