摘要:

AlGaAs/GaAs heterojunction solar cells having conversion efficiencies greater than 19% have been produced on large‐area substrates (13 cm2) using the organometallic‐sourced VPE process. At 1 sun (simulated AM2) these devices have open‐circuit voltages of 1.01 V and short‐circuit currents of 20.9 mA/cm2. In sunlight at a flux concentration of 933 suns at AM2.1, a conversion efficiency of 19% and a fill factor of 0.757 was measured.

ISSN:0003-6951    

DOI:10.1063/1.90176

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A new type of fiber optical waveguide utilizing TlBr and KRS‐5 has been prepared; its infrared transparency extends to wavelengths well beyond those transmitted by known glassy materials.

ISSN:0003-6951    

DOI:10.1063/1.90177

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We present the results ofabinitiocalculations for the ArKr+potential‐energy curves. The curves and calculated transition moments have been used to calculate the cross section for absorption from the bound ground state. After including spin‐orbit interaction, two strong absorptions are predicted with peak cross sections and wavelengths of 1.3×10−16cm2at 295 nm and 4.8×10−18cm2at 376 nm. The 295‐nm absorption band has a cross section of 1.5×10−17cm2at the 248‐nm wavelength of KrF.

ISSN:0003-6951    

DOI:10.1063/1.90178

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Laser action was observed when mixtures of Fe(CO)5and an inert gas were irradiated with a focused beam of KrF laser photons (&lgr;=248 nm). Single‐pass amplified spontaneous emission was observed in two wavelength regions: the near uv and the yellow‐green. Measurements made with narrow bandpass filters showed nearly 60% of the output photons were at 385 nm.

ISSN:0003-6951    

DOI:10.1063/1.90179

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

An optical switch based on the deflection of optical beams between two crossed channel waveguides by an electro‐optic grating was designed and tested. The waveguide medium is Ti‐diffused LiNbO3. At 30 V applied voltage, 92% depletion in the original channel and 48% deflection in the deflected channel was obtained.

ISSN:0003-6951    

DOI:10.1063/1.90180

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

ESR investigations show that two‐photon excitation and x irradiation of nominally pure LiNbO3crystals at 20 K create electrons, which are self‐trapped as Nb4+, and holes, which are captured at acceptor‐type defects as O−. The radiation‐induced absorption at low temperatures is attributed to these centers. The trapped electrons and holes play an important role in the two‐photon‐induced photorefractive process.

ISSN:0003-6951    

DOI:10.1063/1.90181

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A modified TJS laser has been developed, in which the current is effectively confined to the active region. When heat sinked through the substrate, the laser operates continuously at over 100 °C in a single longitudinal and fundamental transverse mode.

ISSN:0003-6951    

DOI:10.1063/1.90182

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Ar/Xe/NF3mixtures were excited by the focused beam from an ArF (193 nm) laser. Xe+ions are produced by two‐photon ionization, the electrons attach to make F−, and the ions recombine to make XeF*. Radiation is observed in the XeF(B 1/2) →XeF(X1/2) bands near 351 nm and in the broader XeF(C3/2) →XeF(A3/2) band near 460 nm. At low background gas pressure, mostlyB‐Xuv emission is observed. As the argon pressure is increased to 1000 Torr, the visible/uv band intensity ratio increases to about 3 to 1. We conclude from these results that theC(3/2) state lies 700±70 cm−1below theB(1/2) state. This conclusion should have a significant impact on our understanding of the fluorescence yields and laser performance of e‐beam‐excited XeF.

ISSN:0003-6951    

DOI:10.1063/1.90183

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We report on the observation of amplified reflection and optical parametric oscillation via degenerate four‐wave mixing in a nonresonant medium. The process is mediated through the third‐order nonlinear susceptibility in a transparent liquid medium, CS2. A collinear mixing geometry is utilized to obtain long interaction lengths and polarization discrimination is used to separate the pump and signal fields.

ISSN:0003-6951    

DOI:10.1063/1.90185

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Molecular beam epitaxial (MBE) growth of InP/Ga0.47In0.53As/InP double heterostructures has resulted in pulsed room‐temperature lasing at 1.65 &mgr;m. Thresholds as low as 3.2 kA/cm2for a 0.6‐&mgr;m‐thick layer has been achieved. These results were achieved by ’’premixing’’ the Ga and In together in a common source oven and precisely monitoring the Ga/In flux ratio during the growth of the Ga0.47In0.53As layer. Cd diffusion from a vapor source allowed us topdope the top InP layer in the as‐grown MBE wafer.

ISSN:0003-6951    

DOI:10.1063/1.90186

出版商:AIP    

年代:1978

数据来源: AIP