21. |
cw LASER ACTION ON 24 VISIBLE WAVELENGTHS IN Se II |
|
Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 400-403
W. T. Silfvast,
M. B. Klein,
Preview
|
PDF (270KB)
|
|
摘要:
cw laser action has been observed at 24 wavelengths in the visible spectrum of Se II in a He&sngbnd;Se discharge. The wavelengths range from 4604 to 6535 Å. A power output of 30 mW was measured on six lines oscillating simultaneously. We obtained as many as 13 wavelengths lasing at the same time in a cavity with broad‐band high‐reflectivity mirrors.
ISSN:0003-6951
DOI:10.1063/1.1653453
出版商:AIP
年代:1970
数据来源: AIP
|
22. |
HIGH‐ORDER TRANSVERSE CAVITY MODES IN HETEROJUNCTION DIODE LASERS |
|
Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 403-406
J. K. Butler,
H. S. Sommers,
H. Kressel,
Preview
|
PDF (278KB)
|
|
摘要:
A refined theoretical model predicts the modal content in the plane perpendicular to the junction for heterojunction injection lasers. It gives good agreement with observed far‐field patterns. Because high‐order modes are favored, lasers with a wide optical cavity sandwiched between two heterojunctions have a beam width at least double that of single‐heterojunction lasers. In a thin cavity which supports but one mode, the increased confinement of the double heterojunction broadens the beam to about 40° at half‐power.
ISSN:0003-6951
DOI:10.1063/1.1653454
出版商:AIP
年代:1970
数据来源: AIP
|
23. |
EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE |
|
Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 406-408
G. Dorda,
Preview
|
PDF (223KB)
|
|
摘要:
Piezoresistance coefficients were determined forn‐type inversion layers at low gate fields on (100), (110), and (111) surfaces of silicon at room temperature. Results deviating from bulk values were found on the (110) and (111) planes. This anomaly can be understood in terms of changed effective masses of conduction electrons on the surface as a consequence of the quantization of the carrier wave function in the surface channel. Good agreement between theoretical results and experiment was found. It was observed that the quantization is efficient even at the threshold voltage (i.e., ∼2×104V/cm) and occasions the anisotropic piezoresistance on the (110) surface.
ISSN:0003-6951
DOI:10.1063/1.1653455
出版商:AIP
年代:1970
数据来源: AIP
|
24. |
THERMOELASTIC DOSIMETRY OF RELATIVISTIC ELECTRON BEAMS |
|
Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 408-411
F. C. Perry,
Preview
|
PDF (263KB)
|
|
摘要:
A technique is described of obtaining directly the energy absorption profile of a solid heated by pulses of intense radiation. The appropriate thermoelastic equations were solved for two cases of particular interest, instantaneous deposition and energy absorbed at a constant rate. The dynamic response of aluminum and copper to electrons of everage energy 1.5 MeV was measured by means of a laser interferometer, and the resulting energy profiles were compared with profiles obtained using a thin film dosimetry technique. The resulting quantitative agreement with the thermoelastic theory is discussed.
ISSN:0003-6951
DOI:10.1063/1.1653456
出版商:AIP
年代:1970
数据来源: AIP
|