摘要:

A SAW piezoelectric delay line has been integrated with a silicon charge‐coupled shift register device (CCD) across a 300‐nm gap to produce a fast‐in slow‐out buffer memory. A prototype with an input bandwidth of 40 MHz centered around 107 MHz, an input signal duration time of 3.5 &mgr;s, and an output clock rate of 100 kHz has been fabricated and tested. The basic configuration of this SAW/CCD consists of a lithium niobate (LiNbO3) delay line, in close proximity to an array of 300 sampling fingers connected to a 300‐stage buried‐channel CCD on ap‐type silicon susbtrate. The output of the CCD retains both amplitude and phase of the input signal.

ISSN:0003-6951    

DOI:10.1063/1.90255

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Iridium silicides have been prepared by annealing Ir films on (100) ‐ and (111) ‐oriented Si from 300 to 500 °C. Phase identification was performed by both x‐ray and electron diffractions, and Schottky‐barrier height by current‐voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.

ISSN:0003-6951    

DOI:10.1063/1.90256

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Oxidation‐enhanced diffusion (OED) of phosphorus and arsenic in ⟨100⟩‐oriented silicon has been characterized under low‐concentration doping conditions. The first indisputable evidence of arsenic OED in silicon has been obtained. The impurities were introduced by ion implantation, and thermally diffused profiles under oxidized and nonoxidized silicon surfaces were obtained simultaneously. Samples were beveled and the doping profiles were characterized by means of spreading resistance. Because of the close proximity of intrinsically diffused and OED profiles, the relative change in diffusivity could be accurately obtained. Both for phosphorus and arsenic the enhancement decreases as temperature increases, a behavior that is in agreement with previously reported data for boron. On the basis of the present data, it can be concluded that (a) the diffusion mechanisms are basically the same for all three elements and (b) the impurity diffusion mechanism involves two types of point defects in silicon, and the oxidation process increases the concentration of only one of these defects.

ISSN:0003-6951    

DOI:10.1063/1.90257

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A refractory stencil lift‐off process utilizing Nb/Cu bilayers is described that is suitable for materials, such as the high‐transition‐temperature superconductors, which must be deposited on hot (up to 1000 °C) substrates.

ISSN:0003-6951    

DOI:10.1063/1.90258

出版商:AIP    

年代:1978

数据来源: AIP