21. |
Amorphous thin films of Zn3P2: Preparation and characterization |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 969-970
J. L. Deiss,
B. Elidrissi,
M. Robino,
R. Weil,
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摘要:
We report about the preparation and characterization of amorphous thin films of Zn3P2. The optical properties of these films are given and compared to those of polycrystalline thin films.
ISSN:0003-6951
DOI:10.1063/1.97498
出版商:AIP
年代:1986
数据来源: AIP
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22. |
Enhancement of film deposition rate due to the production of Si2H6as an intermediate in the photodecomposition of SiH4using an ArF excimer laser |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 971-973
Toshihiro Taguchi,
Masato Morikawa,
Yasuyuki Hiratsuka,
Koichi Toyoda,
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摘要:
Deposition of amorphous hydrogenated silicon films (a‐Si:H) on a glass substrate by photodissociation of SiH4using a focused ArF excimer laser beam directed parallel to the substrate has been demonstrated. The rate of film deposition increased with irradiation time at constant laser power, with a fixed initial quantity of reactant gas. This result indicates the formation of Si2H6, which is excited by a single incident photon. The small amount of Si2H6formed promoted photodecomposition of SiH4.
ISSN:0003-6951
DOI:10.1063/1.97499
出版商:AIP
年代:1986
数据来源: AIP
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23. |
Damage calculation and measurement for GaAs amorphized by Si implantation |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 974-976
W. G. Opyd,
J. F. Gibbons,
J. C. Bravman,
M. A. Parker,
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摘要:
Extended defects in GaAs are investigated following epitaxial regrowth of amorphous layers. GaAs surface layers were amorphized by Si+implants at liquid‐nitrogen temperature. Anneals were performed for 4 s to 30 min from 150 to 885 °C. Rutherford backscattering spectrometry and transmission electron microscopy were used to evaluate the results of annealing. Complete solid‐state epitaxy occurs rapidly at low temperature. Stacking faults and microtwins surrounded by dislocation networks extend to the surface following regrowth. The dislocations anneal at varying rates over intermediate temperature ranges (200–700 °C), and the microtwins climb out at higher temperatures (>700 °C). Defect depth profiles are correlated with damage and stoichiometric imbalances computed by the Boltzmann transport equation approach to ion‐implant modeling.
ISSN:0003-6951
DOI:10.1063/1.97500
出版商:AIP
年代:1986
数据来源: AIP
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24. |
Magnetic properties of cobalt nitride thin films |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 977-979
Morito Matsuoka,
Ken’ichi Ono,
Takashi Inukai,
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摘要:
Cobalt nitride (CoNx) thin films with a large perpendicular magnetic anisotropy are synthesized by reactive sputtering. The perpendicular magnetic anisotropy is induced by substrate heating during deposition, annealing after deposition, or ion bombardment during deposition.
ISSN:0003-6951
DOI:10.1063/1.97501
出版商:AIP
年代:1986
数据来源: AIP
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25. |
Observation of Ne´el structure walls on the surface of 1.4‐&mgr;m‐thick magnetic films using spin‐polarized scanning electron microscopy |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 980-981
K. Koike,
H. Matsuyama,
K. Hayakawa,
K. Mitsuoka,
S. Narishige,
Y. Sugita,
K. Shiiki,
C. Saka,
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摘要:
Ne´el‐type surface magnetic wall structure is observed on thick samples such as 1.4‐&mgr;m‐thick Permalloy polycrystal film and 1‐&mgr;m‐thick Co‐based amorphous films. The structure is observed by using spin‐polarized scanning electron microscopy. These observations are consistent with Hubert’s two‐dimensional domain wall model for thick films [Z. Angew. Phys.32, 58 (1971)].
ISSN:0003-6951
DOI:10.1063/1.97502
出版商:AIP
年代:1986
数据来源: AIP
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26. |
68.4‐T‐long pulse magnet: Test of high strength microcomposite Cu/Nb conductor |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 982-983
S. Foner,
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摘要:
A multilayer wire‐wound pulsed field magnet was fabricated using a new metal‐matrix microcomposite Cu/Nb conductor. The 0.5‐in.‐i.d. magnet used square cross‐section Cu/Nb wire, precompressed in a hardened steel container and cooled to 77 K, to generate 68.4±1 T for a 5.6‐ms half‐period. The maximum field was generated using a 100‐kJ, 4‐kV capacitor bank of the Francis Bitter National Magnet Laboratory pulsed field facility. The Cu/Nb composite had an ultimate tensile strength of 180 ksi at 77 K and 140 ksi at 293 K. These new microcomposites have exceptional strength, electrical, and thermomechanical properties for very high stress applications.
ISSN:0003-6951
DOI:10.1063/1.97503
出版商:AIP
年代:1986
数据来源: AIP
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27. |
Erratum: Delta‐doped ohmic contacts ton‐GaAs [Appl. Phys. Lett.49, 292 (1986)] |
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Applied Physics Letters,
Volume 49,
Issue 15,
1986,
Page 984-984
E. F. Schubert,
J. E. Cunningham,
W. T. Tsang,
T. H. Chiu,
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ISSN:0003-6951
DOI:10.1063/1.97640
出版商:AIP
年代:1986
数据来源: AIP
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