摘要:

The first measurement of the impact ionization rates for electrons and holes in Al0.48In0.52As is reported. Photomultiplication measurements in pin avalanche photodiodes give &agr;/&bgr;≊2.5–3.0 in the electric field range 3.3×105V/cm≤F≤4.3×105V/cm. This material can therefore be used to implement a potentially high‐performance, long‐wavelength avalanche photodiode, with separate absorption and multiplication regions and a high‐low electric field profile (HI‐LO SAM APD).

ISSN:0003-6951    

DOI:10.1063/1.95467

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Significant improvements in the efficiencies of dendritic web and edge‐supported‐pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60±0.05 mA/cm2exhibits a maximum at approximately 1400‐eV ion beam energy.

ISSN:0003-6951    

DOI:10.1063/1.95468

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We report the first Raman scattering study of Cd1−xMnxTe superlattices. The films are grown by molecular beam epitaxy. Brillouin zone‐folding effects on LA phonons, resonant scattering by LO phonons, and the magnetic field‐induced shift of the photoluminescence peak are reported. The latter yields an effective electronicgfactor of ∼100, comparable to that of Cd1−xMnxTe bulk crystals. No collective magnetic excitation was detected at zero field even at 5 K in the superlattices studied. However, the Raman paramagnetic resonance of Mn2+ions could be excited in an applied field. The implications of this result for magnetic phase transitions within superlattice layers are briefly mentioned.

ISSN:0003-6951    

DOI:10.1063/1.95469

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Boron was implanted intop‐type (100) silicon at an energy of 4 MeV to create a layer of heavily doped silicon centered at a depth of 5.2 &mgr;m below the surface. Bothn‐channel andp‐channel metal‐oxide‐silicon, field‐effect transistors (MOSFET’s) and various diode structures were fabricated over this implanted region by using a 3‐&mgr;m complementary MOSFET (CMOS) technology. The results show that the implanted silicon is recrystallized to a device quality state. No increase in diode leakage or degradation in MOSFET device characteristics is observed. Experimental results show that this subdevice buried layer leads to a reduction of CMOS latch‐up susceptibility.

ISSN:0003-6951    

DOI:10.1063/1.95470

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A pulsed ArF laser is used to photochemically deposit thin films of silicon dioxide on silicon substrates. As the substrate temperature was increased during film deposition, the etch rate, dielectric constant, flatband voltage shift, and hydrogen bonding of the SiO2film decreased while the refractive index, resistivity, and breakdown voltage increased. The etch rate and infrared absorbance of bonded hydrogen incorporated in the SiO2film also decreased when surface photons impinged on the growing films or when a post‐deposition anneal was performed.

ISSN:0003-6951    

DOI:10.1063/1.95471

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Near‐surface defects formed during rapid thermal annealing (950–1150 °C, 10 s) of preamorphized and BF+2‐implanted (100) Si have been studied by a combination of cross‐sectional transmission electron microscopy and secondary‐ion mass spectrometry. Two types of defects are identified: fine clusters (1.5–4 nm in diameter) are shown to be related to fluorine, and stacking faults are correlated with the presence of both excess boron above the solid solubility limit and fluorine. In addition, the peak fluorine concentration is found to be lower in samples which contain a high density (∼108cm−2) of ‘‘hairpin’’ dislocations, indicating that a pipe diffusion mechanism for the rapid out‐diffusion of fluorine may be operative.

ISSN:0003-6951    

DOI:10.1063/1.95446

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The use of Sn‐P is proposed as a new method of generating phosphorus beams for molecular beam epitaxy. This method generates almost pure P2beams with negligible by‐product. Theoretical predictions and experimental data are presented.

ISSN:0003-6951    

DOI:10.1063/1.95472

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Epitaxial single‐crystalline GaAs‐rich GaAs1−xSbxlayers have been examined at room and liquid nitrogen temperatures by means of reflectivity measurements in the fundamental absorption region. The energies of observed interband transitions have been linearly correlated with the composition.

ISSN:0003-6951    

DOI:10.1063/1.95473

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A family of planar superconducting magnetic gradiometers for use as magnetic monopole detectors has recently been proposed. We describe an alternative system which reduces the number of loop crossovers for a two‐dimensionalNth order gradiometer from approximately 22NtoN2. This system permits much higher order gradiometers to be used, for a given detector area and superconducting quantum interference device input inductance, resulting in improved signal to noise performance. The simplification of design should also minimize the practical difficulties of fabricating high order gradiometers.

ISSN:0003-6951    

DOI:10.1063/1.95474

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

An apparatus for the detection of luminescence spectra with subpicosecond resolution is described. It is applied to the measurement of the formation time of excitonic particles in CuCl.

ISSN:0003-6951    

DOI:10.1063/1.95443

出版商:AIP    

年代:1984

数据来源: AIP