摘要:

Proposed is a triode structure made of semiconductor heterojunctions where carriers of one type tunnel through the base region to which carriers of the other type are confined. In1−xGaxAs and GaSb1−yAsyalloys are candidates for this heterostructure. As a three‐terminal amplifier, the device is expected to exhibit high impedances for both input and output, a large current gain, and a marked improvement in high‐frequency peformance.

ISSN:0003-6951    

DOI:10.1063/1.89505

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

We report the solid‐phase growth of epitaxial Si thin films by the heating of amorphous Si deposited onto atomically clean (100) Si substrates at room temperature. Epitaxial Si layers ranging in thickness from 1000 to 5000 A˚ have been grown by heating the amorphous films in ultrahigh vacuum to temperatures of 500–600 °C. Good crystal quality of the layers grown by this method has been demonstrated by Rutherford backscattering and transmission electron microscopy.

ISSN:0003-6951    

DOI:10.1063/1.89506

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Spatial distributions of Auger signals generated in an aluminum target in scanning Auger electron microscopy were obtained by Monte Carlo calculations including secondary electron generation. In the low‐energy region, the cross sections calculated by the partial wave expansion method were used instead of the screened Rutherford cross section to describe the elastic scattering process. The result suggests that secondary electrons of high energy are a significant source of Auger signals, particularlyLVV‐Auger electrons, in scanning Auger electron microscopy.

ISSN:0003-6951    

DOI:10.1063/1.89514

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

It is proposed that the average migration distanceLof electrons and holes in insulators can be determined from electron‐hole recombination at activator ions acting as internal and radiative recombination centers. This is demonstrated for Y2O3. One‐dimensional migration (along a line) rather than three‐dimensional spreading is found;L = dC−1, wheredis the cation‐cation distance andCis the activator concentration in mole fraction.

ISSN:0003-6951    

DOI:10.1063/1.89515

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Interposed films of CdF2, SnF2, PbF2, InF3, or BiF3can be used to bond vacuum‐evaporated gold onto oxide or glass substrates. The fluoride adheres well even when deposited at relatively low temperatures; however, except for SnF2, mp 220 °C, thin (e.g., 300 A˚) gold films adhere best when the fluoride‐coated substrate temperature is between 120 and 180 °C, at least initially, during gold deposition. For these cases, discontinuous growth for thin gold films is avoided by remaining well below the upper temperature. Thicker gold films (e.g., 2000 A˚) adhere well and are continuous at higher temperatures.

ISSN:0003-6951    

DOI:10.1063/1.89516

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Continuous operation over 1500 h at 77 K has been achieved by use of a PbTe/Pb0.93Sn0.07Te double‐heterostructure laser which was grown using the liquid‐phase‐epitaxy method. The cw threshold current changed only about 3% during the first 200 h. It is concluded that the lifetime of PbTe/PbSnTe double‐heterostructure lasers at 77 K is fundamentally very long.

ISSN:0003-6951    

DOI:10.1063/1.89491

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Dynamic negative resistances observed inp‐nInSb diodes reverse biased at 77 °K are described. The diodes were made by zinc diffusion on the antimony side ofn‐type InSb wafers at 450 °C for 6 h. Coherent current pulse trains of a small duty cycle, with current pulses of amplitude 0.17 A and rise time 0.5 nsec and with great voltage drops, are generated in such a negative‐resistance region which is associated with deep‐level states produced by the above zinc diffusion treatment.

ISSN:0003-6951    

DOI:10.1063/1.89517

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Tunnel injection is demonstrated into the confined‐particle states of an In1−xGaxP1−zAszpotential well, located on thep‐type side of an InPp‐njunction, leading to structure in theI‐V,dI/dV, andd2I/dV2characteristics and to step increases in the intensity of the recombination radiation at bias voltagesVcorresponding to the states of the well [eV∼Eg(InGaPAs) ∼h&ngr;<Eg(InP)].

ISSN:0003-6951    

DOI:10.1063/1.89518

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Significant enhancement of the short‐circuit current of small‐area MIS and Schottky solar cells can occur by collection of carriers generated around the periphery of the cell. The amount of peripheral collection boost is predicted and studied experimentally. Very small‐area cells (<0.02 cm2) can have their short‐circuit currents boosted by over 80%. For cells over 1 cm2, the increase is generally less than 10%. These results highlight the importance of basing efficiency measurements on the total front surface area of the cell.

ISSN:0003-6951    

DOI:10.1063/1.89487

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A method is described for determining the impurity profile beneath silicon Schottky diodes at room temperature when current transport is dominated by thermionic‐field emission of electrons. The technique may be used when depleting between 1012and 1013charges cm−2.

ISSN:0003-6951    

DOI:10.1063/1.89488

出版商:AIP    

年代:1977

数据来源: AIP