摘要:

Thin, polycrystalline films ofp‐type Zn3P2were grown by close‐spaced vapor transport on mica substrates coated with films of Fe and Si. Schottky solar cells were prepared by sputter depositing a thin, transparent film of Mg on Zn3P2. A total area conversion efficiency of 4.3% was achieved on 1‐cm2area cell, under simulated AM1 illumination. The short‐circuit current and open‐circuit voltage were comparable to similar devices on single‐crystal Zn3P2. The barrier height was found to be ∼1.3 eV, higher than for Mg/Zn3P2contacts reported earlier.

ISSN:0003-6951    

DOI:10.1063/1.92921

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

It is found experimentally that a thermal anneal inmolecularhydrogen at 450 °C reduces the sheet resistance of a laser‐recrystallized polycrystalline silicon layer supported by a silicon dioxide layer. This effect can be reversed by annealing the polycrystalline silicon in nitrogen. The observed electrical characteristics of the polycrystalline silicon are similar to those treated with an atomic hydrogen plasma where grain‐boundary potential barrier lowering is believed to be responsible for the reduction in the resistivity.

ISSN:0003-6951    

DOI:10.1063/1.92922

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Photoluminescence measurements of pure GaAs crystals cleaved in ultrahigh vacuum (UHV) are compared to those of air‐cleaved reference samples. Nonradiative surface recombination and band bending are considerably reduced at the UHV‐cleaved surface. We find at low temperature (∼20 K) roughly the same spectral shape and the same integrated intensity for the UHV‐ and air‐cleaved surfaces provided we apply a factor of 10 lower excitation power density to the UHV‐cleaved surface. This factor of 10 stays constant over more than five orders of magnitude of excitation density. A detailed comparison of the spectra shows that the characteristic reabsorption minimum in the free‐exciton polariton luminescence is missing in the case of the UHV‐cleaved surface.

ISSN:0003-6951    

DOI:10.1063/1.92923

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report a photoluminescence study of pulsed ruby laser irradiated crystalline and ion implanted GaAs, which supports the following conclusions: (1) pulsed laser irradiation of crystalline GaAs alters both the intensity and the spectrum of photoluminescence, corresponding to an increase in nonradiative recombination centers present in the material; (2) the variation of luminescent intensity with laser energy density is different forn‐ andp‐type materials; (3) no luminescence is detected in high dose ion implanted GaAs, either before or after laser annealing.

ISSN:0003-6951    

DOI:10.1063/1.92924

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Self‐annealing implantation with dopant ions has been successfully applied to the creation ofn+‐psilicon diodes. Experimental conditions as well as current voltage characteristics of self‐annealed implanted diodes and thermally annealed diodes used as controls are presented.

ISSN:0003-6951    

DOI:10.1063/1.92925

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report on the production of doped silicon layers buried under epitaxial undoped silicon layers, giving particular attention to the abruptness of the doped‐undoped silicon interface. Arsenic‐implanted silicon is both annealed and atomically cleaned using pulsed laser irradiation. Surface cleanliness and surface order are checked with Auger electron spectroscopy and low energy electron diffraction respectively. Molecular beam epitaxy is done with a substrate temperature between 300 and 600 °C, resulting in an epitaxial silicon layer of typically 100 nm. Rutherford backscattering plus channeling show that the arsenic concentration drops abruptly at the substrate‐epitaxy interface and that the epitaxial layer is of good crystal quality.

ISSN:0003-6951    

DOI:10.1063/1.92926

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Epitaxial growth of CaF2films onto Si(100) and (111) substrates and the growth of Si films onto the CaF2/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that the optimum growth temperatures at which the crystalline quality of the CaF2films is excellent range from 600 to 800 °C for Si(111) substrates and from 500 to 600 °C for Si (100). It has also been found that a heteroepitaxial Si/CaF2/Si(111) structure is formed by vacuum deposition of Si onto the heated CaF2/Si(111) structure.

ISSN:0003-6951    

DOI:10.1063/1.92927

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Deep level transient spectroscopy has been utilized to study the electronic defect levels in cw laser‐annealed and scanning electron‐beam‐annealed Si after ion implantation. For cw laser annealing, a dominant hole trap, whose concentration increases by more than one order of magnitude with increasing laser power, has been measured in slip‐free samples. In contrast, only a low concentration of hole traps appears in electron‐beam‐annealed Si. This laser‐induced defect is not stable at room temperature; it decays with time and can be restored by low‐temperature thermal annealing. For the furnace‐annealed control samples, rapid quenching from sufficiently high temperature into water produces the same defect energy level and annealing characteristic as the laser‐induced defect. These annealing characteristics of laser‐induced defects and thermally induced, quenched‐in defects are tentatively correlated with Fe and Fe‐B pair reactions in Si.

ISSN:0003-6951    

DOI:10.1063/1.92928

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

An induced junction array is proposed as an alternative to the conventionalPNdiode configuration in the implementation of reference storage in a surface acoustic wave SAW storage correlator. Induced junction devices fabricated in the ZnO‐on‐Si structure are found to exhibit performance characteristics comparable to those ofPNdiode correlators, while providing greater ease of fabrication.

ISSN:0003-6951    

DOI:10.1063/1.92930

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Some controversy exists as to whether the reaction of oxygen and Si at the Si‐SiO2interface involves both atomic and molecular oxygen. From the direction of curvature of Arrhenius plots for the observed rate constants substantial support is obtained for the mechanism with two oxidant species. The direction of curvature was obtained from the second derivative of In kobswith respect toT−1. Parallel rate processes yield concave upwards Arrhenius plots while consecutive processes yield concave downwards plots.

ISSN:0003-6951    

DOI:10.1063/1.92931

出版商:AIP    

年代:1982

数据来源: AIP