摘要:

Thin Cd1−xMnxTe semiconductor films withxranging from 0 to 0.9 have been grown on CdTe (111) substrates using the atomic layer epitaxy method. The films grow epitaxially at all concentrations and show no manganese interdiffusion. The films are characterized by low‐energy electron diffraction, Auger electron spectroscopy and angle‐resolved UV photoemission.

ISSN:0003-6951    

DOI:10.1063/1.95342

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A new mode of IR detection using photoemission from a single quantum well is proposed and optimization of the device performance by the proper choice of parameters is discussed. Despite the very thin device structures, theoretical calculations show large absorption at wavelengths near cutoff. The largest photoemissive response is found by adjusting the well parameters so that an excited virtual state lies just above threshold.

ISSN:0003-6951    

DOI:10.1063/1.95343

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode‐locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35‐ps pulses for excite‐probe measurements. At carrier densities in excess of 1018cm−3Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10−28cm6 s−1.

ISSN:0003-6951    

DOI:10.1063/1.95344

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The impact ionization coefficients for electrons and holes in (100) oriented Ga0.18In0.82As0.39P0.61whose band gap is 1.11 eV have been obtained from photomultiplication measurements on a Cd diffusedp+nabrupt junction having a donor concentration of 2.5×1016cm−3. The electron‐to‐hole ionization coefficient ratio has been found to be about 1.1 in the electric field range 4.0×105–5.0×105V/cm.

ISSN:0003-6951    

DOI:10.1063/1.95345

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

In liquid phase epitaxial GaSb and AlGaSb grown at low temperatures some papers reportedp‐type conductivity and others observed the conversion ton‐type conductivity. In this paper, it is shown thatp‐type conductivity is intrinsic at growth temperatures down to 350 °C and that the extrinsic impurities influence the concentration at lower growth temperatures than 350 °C.

ISSN:0003-6951    

DOI:10.1063/1.95346

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We have developed an optical technique forinsitumeasurement of temporal change and spacial profile of Si lattice temperature during cw laser annealing. This technique utilizes time‐dependent optical interference in Si films on insulator. By using a microscope for focusing a laser probe beam to 2.0 &mgr;m, time‐resolved and space‐resolved Si lattice‐temperatures were measured below the melting point (1412 °C) on a time scale of 10−4–100s during cw laser annealing of Si on sapphire.

ISSN:0003-6951    

DOI:10.1063/1.95347

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Continuous wave operation of an Al0.21Ga0.31In0.48P /Ga0.52In0.48P /Al0.21Ga0.31In0.48P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 &mgr;m and the threshold current was 55 mA for a diode with a nitride‐insulated, 8‐&mgr;m‐wide and 250‐&mgr;m‐long stripe geometry.

ISSN:0003-6951    

DOI:10.1063/1.95363

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The electron concentration at anN‐AlGaAs/GaAs interface is shown to be spatially modulated at low temperatures by the selective photoionization of deep donors in AlGaAs using two interfering laser beams. The charge pattern thus formed is persistent and detected by measuring the anisotropy of the channel conductivity. Grating patterns with a period as small as 0.6 &mgr;m were successfully recorded in accordance with the prediction that spatial resolution comparable with the AlGaAs layer thickness (∼0.1 &mgr;m) will be achieved.

ISSN:0003-6951    

DOI:10.1063/1.95348

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A persistent photoconductivity is observed in the transport of the high mobility two‐dimensional electron gas in In0.53Ga0.47As/InP heterostructures. Low field Hall measurements from 300 to 4.2 K and the quantized Hall effect in the high field limit are studied with radiation from visible and infrared light‐emitting diodes. Our results demonstrate conclusively that the effect is due to photogeneration of electron‐hole pairs in the heterostructure and trapping of holes in the In0.53Ga0.47As.

ISSN:0003-6951    

DOI:10.1063/1.95349

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The electrical properties of thin‐film CuInSe2(<4 &mgr;m thick) deposited by coevaporation of the elements have been measured by different techniques as a function of material composition. A correlation between the Cu/In and Se/metal ratios versus majority‐carrier concentration is established. A qualitative scheme is developed, based on experiments, which predicts the majority‐carrier type and concentration in relation to the stoichiometry of the material.

ISSN:0003-6951    

DOI:10.1063/1.95350

出版商:AIP    

年代:1984

数据来源: AIP