摘要:

The effective recombination coefficient &ggr;* in a self‐sustained CO2laser discharge at a pressure of 1.3 bar is determined from a rate equation for the electron density using experimental values of the discharge current and voltage. It is found that &ggr;* depends strongly on the electric field strength as well as on the electron density.

ISSN:0003-6951    

DOI:10.1063/1.90406

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Intense lasing of XeCl (180 mJ) and KrCl (100 mJ) occurs using HCl as the halogen doner. The low energies obtained from e‐beam devices are believed to result from Ar+2molecular‐ion absorption. Very long XeCl lasing lifetime with respect to gas fill is observed; this is postulated to be the result of photodissociation of Cl2due to the laser wavelength which, in turn, results in enhanced rates for the formation of HCl.

ISSN:0003-6951    

DOI:10.1063/1.90407

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Vertical single‐junction silicon photovoltaic cells show a steady increase in open‐circuit voltage with increasing incident light intensity of approximately 0.1 V per decade of intensity, up to approximately 100 W/cm2(∼1000 suns). Voltages as high as 0.76 V have been observed at 25 °C with no apparent saturation of voltage at high intensity. Measurements are presented for cells of various base doping levels. An efficiency of 19.1% has been observed at 76 W/cm2and 25 °C using an unfiltered xenon short‐arc lamp for a nonoptimized cell.

ISSN:0003-6951    

DOI:10.1063/1.90408

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A conceptually simple modification of the Deal‐Grove model for oxidation of Si by dry oxygen provides an excellent fit to experimental data while removing the regime of ’’anomalously high’’ initial oxidation rates inferred by previous workers. The essential physical proposal is that while diffusion through the amorphous oxide is viamolecularoxygen, Si oxidation occurs through the reaction of a small concentration ofatomicoxygen.

ISSN:0003-6951    

DOI:10.1063/1.90409

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Metal‐oxide‐semiconductor (MOS) capacitors were prepared by thermal oxidation (wet and dry) of AlAs epilayers grown on GaAs using molecular beam epitaxy (MBE). This oxidation process was found to be self‐terminated at the AlAs‐GaAs interface. Together with the use of MBE for growing the AlAs‐GaAs multilayer structures, the oxide films obtained were extremely uniform over areas ≳6 cm2, possessed sharp oxide‐semiconductor interfaces, and precise film thicknesses. Capacitance‐voltage measurements on these MOS capacitors displayed inversion behavior and showed little or no hysteresis for oxides prepared by dry oxidation. Measured fixed interface charge density was ∼ (4–6) ×1011cm−2, while breakdown fields were ∼ (2–4) ×106V/cm.

ISSN:0003-6951    

DOI:10.1063/1.90410

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

In the laser annealing of silicon by Nd : YAG laser irradiation a dose dependence of the annealing threshold and final impurity depth distribution has been observed. Impurity depth distributions and damage profiles observed by Rutherford backscattering are consistent with the notion of the formation of a thin liquid layer and subsequent regrowth of the crystal upon cooling. We conclude that the annealing behavior is very sensitive to the time of formation of the liquid layer during the laser pulse.

ISSN:0003-6951    

DOI:10.1063/1.90411

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

3000‐A˚‐thick epitaxial layers of ⟨100⟩ and ⟨111⟩ silicon have been grown using aQ‐switched ruby laser. The initial amorphous silicon layers were formed by e‐gun evaporation of high‐purity silicon. Using Rutherford backscattering it was established that the crystal quality of the regrown ⟨100⟩ Si is much better than the ⟨111⟩ Si, similar to thermal annealing.

ISSN:0003-6951    

DOI:10.1063/1.90385

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Thermally treated silicon contains iron which can be frozen on interstitial sites by quenching. EPR, combined with neutron activation analysis of heat‐treated and as‐grown silicon, shows that the iron diffuses into the crystal from sources outside the specimen. It can be found mostly in theTdinterstitial site. The untreated floating‐zone silicon includes only 1013Fe/cm3.

ISSN:0003-6951    

DOI:10.1063/1.90412

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Electron‐beam‐absorption measurements were performed to investigate the formation and annealing of radiation damage produced by ion implantation into GaP and GaAs0.6P0.4. The fluenceFArequired to yield an amorphous layer, the dependence ofFAon ion mass and target temperature, and the temperatures necessary for annealing were determined. For 140‐keV Ar into GaAs0.6P0.4, we foundFA=1×1014cm−2at 273 K andFA→∞ at 580 K. Our results compare well with known data for GaAs and GaP and demonstrate the applicability of the new method of measurement.

ISSN:0003-6951    

DOI:10.1063/1.90413

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The time‐resolved reflectivity at 0.63 &mgr;m from arsenic‐implanted silicon crystals has been measured during annealing by a 1.06‐&mgr;m laser pulse of 50‐ns duration. The reflectivity was observed to change abruptly to the value consistent with liquid silicon and to remain at that value for a period of time which ranged from a few tens of nanoseconds to several hundreds of nanoseconds, depending on the annealing pulse intensity. Concurrently, the transmission of the primary annealing beam dropped abruptly. These observations confirm the formation of a metallic liquid phase at the crystal surface during the annealing process.

ISSN:0003-6951    

DOI:10.1063/1.90369

出版商:AIP    

年代:1978

数据来源: AIP