摘要:

Charge‐coupled devices with resistive material covering the oxide between adjacent gate electrodes are described. These devices were fabricated incorporating a continuous strip of deposited silicon with doped and undoped regions. Since the surface potential under the gap can be controlled using this structure, reliablep‐channel devices with nonoverlapping gate electrodes can be made which have all the advantages ofp‐channel silicon gate technology. Transfer efficiencies greater than 99.3% per transfer have been obtained at up to 1‐MHz bit rates for three‐phase experimental devices.

ISSN:0003-6951    

DOI:10.1063/1.1654040

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A new class of electron interferometers is proposed that make use of a laser‐modulated electron beam. The observable interference arises in second‐order processes, since the first‐order interference oscillates rapidly and averages to zero. It is shown that the detected signal varies sinusoidally with the separation of two sequential modulators, thus generating a fringe pattern with peak‐to‐peak spacing that may be smaller or larger than the laser wavelength. It is suggested that such devices could be used to detect and study the modulation process and, because they operate with massive charged particles, to perform a wide variety of new experiments and high‐precision measurements.

ISSN:0003-6951    

DOI:10.1063/1.1654041

出版商:AIP    

年代:1972

数据来源: AIP