摘要:

We describe a modified anodic bonding technique for hermetic sealing between GaAs and glass, the modification being called for by the formation of a nonadherent oxide layer during the bonding process. We show that this can be avoided by prebaking the glass and performing the bonding operation in a reducing atmosphere. With this technique, strong, hermetic seals can be produced. Parameter dependence has been studied theoretically by solving the continuity equation for a one‐dimensional model of the experimental situation. Experimentally, the bonds were evaluated with a number of methods, giving support for a model consisting of a high‐field, sodium‐depleted zone in the interface region during bond formation. The described technique is of particular interest for optoelectronic devices requiring transparent and hermetic seals.

ISSN:0003-6951    

DOI:10.1063/1.94322

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Photoluminescence in the photon energy range 0.7–1.2 eV is investigated for commercial Czochralski‐grown Si crystals subjected to isothermal annealing at 650 °C for 1–450 h. A strong and sharp line appears at 0.903 eV at certain annealing stages, regardless of the sources and the conductivity type of starting materials. The intensity dependence of the 0.903‐eV line on the annealing time coincides with the concentration dependence expected for Si self‐interstitials emitted during the oxygen precipitation process. This is experimental evidence that microdefects responsible for this line are correlated with Si self‐interstitials.

ISSN:0003-6951    

DOI:10.1063/1.94323

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The electronic properties of hydrogenated amorphous silicon (a‐Si:H) produced by laser‐induced chemical vapor deposition of silane are reported. Spin density and both optical gap and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported. Film properties are superior to those produced by conventional chemical vapor deposition of silane.

ISSN:0003-6951    

DOI:10.1063/1.94324

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The use of HgI2as a thermal‐neutron solid‐state electronic detector, in particular its application for neutron diffractometry, is demonstrated for the first time. A single crystal HgI2detector is used to count prompt gamma emissions (0.2–5 MeV) from (n,&ggr;) nuclear reactions in Gd or Cd foils. The neutron counting efficiency depends on the HgI2detector thickness. For a 1‐mm thickness of HgI2the efficiency is about 10% compared to the efficiency of a10BF3gas detector.

ISSN:0003-6951    

DOI:10.1063/1.94325

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Proton‐defined stripe geometry GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy have been operated continuously at 5 mW/facet for over 1800 h at 70 °C and over 1100 h at 100 °C. With a 0.7‐eV activation energy, these times extrapolate respectively to 11.7 and 47.9 years of continuous operation at 20 °C. In the present mode of degradation, we estimate that the mean time to double the initial operating current is greater than 138 years at 20 °C.

ISSN:0003-6951    

DOI:10.1063/1.94301

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A selectively doped InP/In0.53Ga0.47As heterostructure has been prepared by chloride transport vapor phase epitaxy. Hall and Subnikov‐de Haas measurements revealed the existence of a high mobility, two‐dimensional electron gas at the interface of this heterostructure. Enhanced electron mobilities were as high as 106 000, 71 200, and 9 400 cm2/Vs at 4.2, 77, and 300 K, respectively. These indicate the excellent interface properties of the selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy.

ISSN:0003-6951    

DOI:10.1063/1.94326

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Vapor phase epitaxial gallium arsenide (GaAs) layers, with lower compensation ratios than any reported heretofore, have been reproducibly grown by the Ga/H2/AsCl3method. One of these samples has been studied extensively by electrical measurements and shows an acceptor concentration of (2.0±0.7)×1013cm−3, and a compensation rate ofNA/ND=0.06±0.02. These numbers are supported by magnetophotothermal spectroscopy and photoluminescence measurements. The preparation involves growth on [211A] substrates, and a pregrowth bakeout of the Ga source, which results in a significantly lower Zn acceptor concentration in the layer. These results have important implications for various compensation mechanisms which have been proposed for GaAs.

ISSN:0003-6951    

DOI:10.1063/1.94327

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Metal organic vapor phase epitaxy (MOVPE) grown Ga1−xAlxAs‐GaAs heterostructures have been analyzed by spectroscopic ellipsometry in the 1.6–5.4‐eV region. We show that this technique is capable of a nondestructive analysis of the interface region. The method can distinguish between a physical interface (roughness, alloy clustering) and a chemical one (gradual changes in Al concentration). The results show that extremely sharp interfaces (of the order of one monolayer) can be grown by MOVPE.

ISSN:0003-6951    

DOI:10.1063/1.94328

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Preliminary results obtained on enhancement‐type insulated gate field‐effect transistors are described. These are based on the surface accumulation of heteroepitaxially grown Ga0.47In0.53As layers whose residual donor impurities are compensated by deep level Fe acceptors.

ISSN:0003-6951    

DOI:10.1063/1.94329

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We have achieved wide area (38 cm2) electron beam annealing of ion implanted silicon wafers using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up 90 W/cm2was used to anneal the 7‐cm‐diam central portion of boron‐implanted (30 keV, 5×1015atoms/cm2)n‐type ⟨100⟩ silicon wafers 10 cm in diameter. Annealing was obtained without redistribution of the original dopant profile using a 15‐selectron beam exposure. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.

ISSN:0003-6951    

DOI:10.1063/1.94289

出版商:AIP    

年代:1983

数据来源: AIP