摘要:

420‐nm‐thick polycrystalline silicon films doped with phosphorus after atmospheric‐pressure deposition have been investigated as a function of deposition rate. A correlation between deposition rate and oxygen content into polysilicon film, as determined by electron microprobe analysis, has been established, which accounts for the deposition rate effects on the electrical properties and grain size of the film. Layers deposited at rates lower than about 40 nm/min are characterized by an oxygen content of the order of 1% in weight, which inhibits grain growth during high‐temperature processes and increases sheet resistance by reducing both Hall mobility and carrier concentration.

ISSN:0003-6951    

DOI:10.1063/1.92717

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

An unusually large Schottky barrier (≳1.1 eV) is demonstrated by studies of Au on atomically cleann‐type GaAs. It is suggested that this large barrier is produced by Au moving beneath the surface and introducing new gap states close to the valence band maximum. These new gap states can overcome the defect states (produced during the adsorption process) that normally pin the Fermi energy near midgap, thus increasing the barrier height. Starting with an atomically clean surface appears essential.

ISSN:0003-6951    

DOI:10.1063/1.92718

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The effects of 300‐K implantation of 200‐keV Cd+ions and subsequent pulsed laser annealing in GaAs were investigated by means of depth‐resolved cathodoluminescence at 80 K. We found that lattice order could be restored sufficiently to increase the implanation‐quenched luminescence by 2–3 orders of magnitude with either ruby or Nd:glass lasers. Thus the luminescence is recovered to within an order of magnitude of that in unimplanted material.

ISSN:0003-6951    

DOI:10.1063/1.92726

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Nb‐Ge films, which have been prepared by chemical vapor deposition, have been studied for superconducting transition temperatures, crystal structures, and growth morphology. In the films a relationship was obtained among positions at which the highestTcfilms are deposited, the degree of orientation forA15 crystallites is lowered, and the microstructures for film surface change has been found. This can be explained in terms of a higher deposition rate of Ge than that of Nb.

ISSN:0003-6951    

DOI:10.1063/1.92727

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

An intrinsic room‐temperature coercivity of 7.45 kOe has been found in melt‐spun Nd0.4Fe0.6; this value is the largest ever reported for a rare‐earth–iron alloy. A significant correlation was found between quench rate and coercivitiy, suggesting that the quenched alloys consist of fine crystallites or clusters, whose average particle size can be matched to the single‐domain optimum by the appropriate quench rate.

ISSN:0003-6951    

DOI:10.1063/1.92728

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The longitudinal stability of intense particle bunches is investigated theoretically in the limit of small wall resistivity compared to total reactance. It is shown that both in the absence of resistivity and to lowest order in the resistance that an intense bunch is stable against longitudinal collective modes. An expression is derived for the lowest order instability rate. Application of these results are made to drivers for heavy ion inertial fusion.

ISSN:0003-6951    

DOI:10.1063/1.92729

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The singularity expansion method describes the echo return from pulsed radar signals in terms of a Prony‐series superposition of damped sinusoids. These are obtained as the residues of poles of the scattering amplitude in the complex frequency plane. For the example of radar scattering from a conducting sphere, we show that these poles can be regrouped into infinite subsets whose residues sums represent individual creeping waves, thenth pole in the subseries corresponding to the resonance caused by a standing creeping wave withn+1/2 wavelength spanning the circumference. The corresponding Prony subseries thus appears simply as a mathematical device which synthesizes the physical creeping wave.

ISSN:0003-6951    

DOI:10.1063/1.92730

出版商:AIP    

年代:1981

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.92886

出版商:AIP    

年代:1981

数据来源: AIP