摘要:

The origin of a nucleation density depletion around each diamond nucleus on a Si substrate surface is here related to a deformation zone induced by the diamond-substrate lattice misfit. This phenomenon determines a limitation on the maximum nucleation density obtainable. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118673

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

In this letter, we have demonstrated phosphorus diffusion into silicon at a temperature of 700 °C using dual spectral source rapid thermal processing (RTP). The optical energy of vacuum ultraviolet irradiation in conjunction with tungsten halogen lamps (light source used in conventional RTP) is responsible for diffusion at low temperatures. Shallow junctions with high surface concentration were formed and no significant degradation in the bulk minority carrier lifetimes was observed. A qualitative explanation for the observed results is offered based on the role of photoeffects in RTP. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118674

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized byin situscanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pureN2.The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness,t&agr;,with &agr;=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118675

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

A new transparent conducting oxide (TCO), which can be expressed asGa3−xIn5+xSn2O16;0.2⩽x⩽1.6,has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs inGa2O3–In2O3–SnO2are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375&OHgr; cm−1was obtained forH2-reducedGa2.4In5.6Sn2O16.This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-dopedIn2O3.©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118676

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Differential scanning calorimetry and dynamic differential scanning calorimetry were used to analyze the relaxation process of Fe(CuNb)SiB amorphous alloys. The Curie temperature(TC)evolution of the amorphous phase during relaxation as a function of heating rate, time and pre-annealing temperature were measured. Two distinct relaxation processes are observed, consequent with topological and chemical short range order changes. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118677

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

We present extended x-ray absorption fine structure (EXAFS) analyses of the ErLIIIedge in Er-doped (100) Si samples. The samples were prepared by multiple implants of Er and O resulting in the incorporation of1×1019Er/cm3and1×1020O/cm3in a 2.3-&mgr;m-thick amorphous layer. It has been found that the local environment around the Er sites, which consists of six Si first neighbors in the amorphous layer, evolves towards a mixed coordination with O and Si atoms after epitaxial regrowth of the layer at620 °C for 3 h. A further thermal treatment at900 °C removes the residual Er–Si coordination and produces a full oxygen coordinated first shell with an average of 5 O neighbors. The effects of the different thermal processes on the high resolution spectra of the 1.54&mgr;m Er photoluminescence were also measured and related to the EXAFS results. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118678

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

We have calculated the nucleation energy barrier of voids and vacancy(V)type dislocation loops in Si underV-supersaturation conditions. The barrier ofV-type dislocation loops is higher than that of voids by more than one order of magnitude, with the former exceeding 35 eV at attainableV-supersaturation levels. Thus, voids can be nucleated, but not dislocation loops. This provides an explanation for the observations that, in Si crystals grown underV-supersaturation conditions, voids exist butV-type dislocation loops do not. Voids seriously degrade the Si device gate oxide integrity. It is highly probable that theD-type swirl defects in Si are nanoscopic voids. Our calculated results have also provided information for limiting the formation temperature range of theD-swirl defects to be lower than ∼1050 °C, and the SiVformation enthalpy to be above ∼3.0 eV. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118652

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

The orientation of Pb(Zr,Ti)O3(PZT) thin films grown by sputtering on a Si/SiO2/Ti/Pt substrate using aPbTiO3(PT) buffer layer was controlled by changing the thickness of the buffer layer. The x-ray diffraction of PT as a function of the thickness, in the range of 20–400 Å, showed modification of the PT orientation. That suggests a gradual evolution of the lattice parameters in the nucleation stage of PT films. The main growth mechanism was certainly due to the passing from an island growth to a continuous layer. The (111) oriented and (100) oriented PZT films were grown on 50 and 200 Å PT buffer layers, respectively. ©1997 American Institute of Physics. 

ISSN:0003-6951    

DOI:10.1063/1.118679

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Temperature dependent measurements of the 1.54 &mgr;m photoluminescence of Er implanted N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the intensity quenches by more than a factor thousand, while the lifetime quenches from 420 to 3 &mgr;s. The quenching processes are described by an impurity Auger energy transfer model that includes bound exciton dissociation and a nonradiative energy backtransfer process. Electron and hole trap levels are determined. Direct evidence for a backtransfer process follows from spectral response measurements on an Er-implanted Si solar cell. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118680

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Photoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad emission is composed of three distinct recombination processes, two are dominant at low power and a third can be detected at higher excitation power. These three bands are labeledNI,NII, andNIIIwith corresponding peak energies at 2.54, ∼2.58, and 2.65 eV. TheNIband is accompanied by phonon replicas of energy 69±3 meV. The behaviors of theNI,NII, andNIIIbands are consistent with intracenter recombination, donor–acceptor pair recombination, and electron–acceptor recombination, respectively. ©1997 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.118681

出版商:AIP    

年代:1997

数据来源: AIP