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21. |
The Si/SiO2interface examined by cross‐sectional transmission electron microscopy |
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Applied Physics Letters,
Volume 30,
Issue 2,
1977,
Page 120-122
J. Blanc,
C. J. Buiocchi,
M. S. Abrahams,
W. E. Ham,
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摘要:
Thin (200–300 A˚) cross sections of Si/SiO2have been examined by transmission electron microscopy at a resolution of better than 10 A˚ to search for crystalline Si protrusions into, or islands in, the thermally grown SiO2. Within the resolution obtained, no evidence was found for any phase separation within the amorphous oxide layer.
ISSN:0003-6951
DOI:10.1063/1.89289
出版商:AIP
年代:1977
数据来源: AIP
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22. |
Series arrays of superconducting‐normal‐superconducting junctions in the Pb‐Sn lamellar eutectic alloy |
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Applied Physics Letters,
Volume 30,
Issue 2,
1977,
Page 123-125
J. M. Dupart,
J. Baixeras,
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摘要:
Series arrays of about/100 superconducting‐normal‐superconducting junctions have been obtained in the oriented Pb‐Sn lamellar eutectic alloy. The temperature and normal width dependences of the critical currents flowing through these S‐N‐S structures have been studied and can be explained in the framework of the Bardeen‐Johnson theory for systems in the clean limit.
ISSN:0003-6951
DOI:10.1063/1.89290
出版商:AIP
年代:1977
数据来源: AIP
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23. |
The effect of ion implantation on the minimum bubble drive field in magnetic garnet films |
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Applied Physics Letters,
Volume 30,
Issue 2,
1977,
Page 125-127
J. Engemann,
T. Hsu,
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摘要:
The investigation of the minimum bubble drive field (&Dgr;Hz,min) in ion‐implanted 5‐&mgr;m magnetic garnet films shows that it depends strongly on the implantation conditions such as the implantation energy and dosage. With increasing implantation energy and dosage adjusted so that the maximum damage level remains constant, the &Dgr;Hz,mindecreases monotonically. Varying the dosage while keeping the implantation energy constant leads to a pronounced minimum in &Dgr;Hz,min. Reductions of the &Dgr;Hz,minby as much as 43% from that of the as‐grown films have been achieved by using proper ion implantations. The &Dgr;Hz,minin an ion‐implanted film is found also to be dependent on the applied in‐plane fieldHip. With increasingHip, the minimum drive field increases until finally the as‐grown value is reached. This behavior as well as the dependence of &Dgr;Hz,minon the different ion implantations can be explained qualitatively by a model, assuming a capping layer somewhat buried in the garnet film.
ISSN:0003-6951
DOI:10.1063/1.89291
出版商:AIP
年代:1977
数据来源: AIP
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24. |
Erratum: Shrinkage effect of stacking faults during HCl oxidation in steam |
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Applied Physics Letters,
Volume 30,
Issue 2,
1977,
Page 127-127
H. Shibayama,
H. Masaki,
H. Ishikawa,
H. Hashimoto,
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ISSN:0003-6951
DOI:10.1063/1.89464
出版商:AIP
年代:1977
数据来源: AIP
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