摘要:

New modulation‐doped AlxGa1−xAs/GaAs metal‐semiconductor field‐effect photodetectors have been fabricated and tested in a novel picosecond optical sampling gate configuration. The rise time was measured to be 12 ps, with a full width at half‐maximum of 27 ps. The optical electronic picosecond cross‐correlation measurement has shown the importance of the two‐dimensional electron gas for high‐speed operation.

ISSN:0003-6951    

DOI:10.1063/1.94071

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The very rapid temperature dependence between 1 and 4 K of the resistivity of GaAs bolometers was found to follow &rgr;∼exp(AT−1/4). The most plausible attribution of this behavior was to variable range, single particle, hopping, and our data were consistent with the model of Apsley and Hughes.

ISSN:0003-6951    

DOI:10.1063/1.94072

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Reactive ion etching of silicon with NF3gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on  p‐Si and decreases it onn‐Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.

ISSN:0003-6951    

DOI:10.1063/1.94073

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We present an analysis of gold diffusion profiles in silicon taking into account that both self‐interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self‐interstitials to silicon self‐diffusion is about equal to that of vacancies.

ISSN:0003-6951    

DOI:10.1063/1.94074

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The linear electro‐optic coefficientr41was determined in quaternary double heterostructure waveguides containing ap‐njunction. Over the limited range of measurements, it is independent of wavelength and composition with a valuer41=−1.4×10−10cm/V. A strong quadratic electro‐optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.

ISSN:0003-6951    

DOI:10.1063/1.94075

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Isotopic substitution of18O was used in conjunction with secondary ion mass spectrometry to distinguish the source of gettered oxygen associated with damage produced in Si wafers by As ion implantation and by mechanical abrasion. It was found that oxygen was gettered from annealing ambients, exhibiting an enhanced diffusivity in the vicinity of the damaged layers at 600 °C. On the contrary, the oxygen originally dissolved in the wafers wasunaffectedby the damage, not being gettered by either type of damage and having the same diffusivity at that in undamaged Si crystals. These results are compared with published reports of16O analysis of similar experiments.

ISSN:0003-6951    

DOI:10.1063/1.94076

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Thin layers of amorphous silicon (a‐Si) were produced by noble gas ion implantation of (100) substrates held at 77 K. Rutherford backscattering and channeling, and differential scanning calorimetry were used to measure the heat of crystallization, &Dgr;Hac, to be 11.9±0.7 kJ/mol, substantially less than the value predicted by scaling &Dgr;Hacofa‐Ge. The crystal growth velocity is found to have the formv=v0 exp(−2.24 eV/kT). We obtain a new estimate, 1420 K, for the melting temperature ofa‐Si.

ISSN:0003-6951    

DOI:10.1063/1.94077

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Thin‐film transistors were fabricated from polycrystalline silicon films which were produced by glow discharge decomposition of silane at 500 °C on thermal oxidized silicon substrates. The dependence of the crystalline and electrical properties was observed for thicknesses from about 500 to 4500 A˚. As the film grew thicker, the strongly (110) oriented polycrystalline structures became predominant. The conductivity changed from 4×10−9to 10−6(&OHgr; cm)−1and the activation energy from 0.57 to 0.5 eV. The field‐effect mobility of these thin‐film transistors also varied with the thickness of the film.

ISSN:0003-6951    

DOI:10.1063/1.94078

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Large increases in resitivity of Ga0.47In0.53As have been observed due to bombardment with hydrogen ion isotopes. After damage factors due to mass and dose of the implanted isotopes have been taken into account, the high resistivity values of proton and deutron bombarded Ga0.47In0.53As agree,k contrasting with previous observations in GaAs. An explanation is offered.

ISSN:0003-6951    

DOI:10.1063/1.94031

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Electrical connections have been formed in a new lateral link structure which uses polyimide in the gap between, and overlapping, two aluminum electrodes. An argon ion laser, with a pulse width of 1 ms and power levels of about 2 W, was used to locally graphitize the polyimide. One kilohm connections were formed reliably in links ranging in width between 4 and 15 &mgr;m and gap length between 2 and 5 &mgr;m. This technique is the simplest yet proposed for restructuring the connections on an integrated circuit, after fabrication and test, in order to incorporate redundancy for yield improvement.

ISSN:0003-6951    

DOI:10.1063/1.94032

出版商:AIP    

年代:1983

数据来源: AIP