摘要:

Stripe‐geometry AlGaAs‐GaAs single quantum‐well heterostructure lasers are demonstrated in which the region complementary to the stripe (outside of and defining the stripe) is shifted to higher band gap, and lower refractive index, by low‐temperature (600 °C) Zn diffusion. Impurity‐induced Al‐Ga interdiffusion causes the single GaAs quantum well (x=0,Lz≊80 A˚) outside of the stripe region to be mixed (‘‘absorbed,’’x→x′) into the Alx′Ga1−x′As (x′∼0.3,Lz′≊0.18 &mgr;m) bulk‐layer waveguide of the crystal.

ISSN:0003-6951    

DOI:10.1063/1.94883

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Niobium‐niobium oxide‐lead Josephson tunnel junctions have been fabricated using reactive ion beam oxidation. High quality junctions were obtained using a low beam voltage without cooling the sample to 77 K during oxidation. AVm∼20 mV was achieved routinely at a beam voltage of 100 V andVm≳30 mV at 67 V. Furthermore, excellent critical current uniformity was demonstrated using a 10‐cm Kaufman ion source with substrate motion implemented. A standard deviation in the critical current of 0.5% was obtained among three hundred and fifty 30×30 &mgr;m windowed junctions laid out over an area of 1.1×0.34 cm.

ISSN:0003-6951    

DOI:10.1063/1.94884

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

dc getter sputtering was used to deposit amorphous GdCo films. No bias voltage was applied to the substrates during the deposition. A uniform chemical composition throughout the depth of the film was observed using Rutherford backscattering spectrometry. These GdCo films show perpendicular magnetic anisotropy. Furthermore, the magnetic anisotropy can be well described by a uniaxial film whose easy axes are distributed within a range of 15° around the film plane normal.

ISSN:0003-6951    

DOI:10.1063/1.94885

出版商:AIP    

年代:1984

数据来源: AIP