摘要:

Heteroepitaxial Ge films on ⟨100⟩ and ⟨111⟩ Si substrates have been prepared by vacuum evaporation. The films were deposited in moderate vacuum (10−6Torr) at a rate of ∼10 A˚/sec, with the substrates heated to 350–750 °C. The crystalline perfection of the films depends on both substrate orientation and temperature. The best films were obtained on ⟨100⟩ Si substrates heated to 550 °C. Heteroepitaxial GaAs layers of excellent crystal quality have been grown by chemical vapor deposition on such Ge films. GaAs shallow‐homojunction solar cells with conversion efficiencies up to 12% at AM1 have been successfully fabricated.

ISSN:0003-6951    

DOI:10.1063/1.92160

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Implantation of boron ions inn‐type Si wafers was achieved with the plasma flux from a CO2laser‐produced boron plasma. Junction depths of up to 0.4 &mgr;m and peak concentrations of boron atoms of greater than 1020cm−3were achieved with a single 7‐J CO2TEA laser pulse. The measured ion energies of ∼1 keV in the boron flux resulted both in the high concentration near the surface and also the anomalous deep penetrating tail.

ISSN:0003-6951    

DOI:10.1063/1.92161

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Soft‐x‐ray photoemission measurements of ultrahigh vacuum‐cleaved InP‐metal interfaces reveal two classes of microscopic chemical structure. Reactive metal (Al,Ni)‐InP interfaces display cation‐rich outdiffusion, atomically abrupt microstructure, and low Schottky‐barrier height (&fgr;SB), while unreactive metal (Au, Cu)‐InP interfaces exhibit anion‐rich outdiffusion, diffuse microstructure, and high &fgr;SB. For InP and other III‐V compound semiconductor‐metal junctions, chemical bond strength dominates local atomic structure and the type of electrically‐active sites produced near the interface. These features can be controlled extrinsically by Al or Ni interlayers.

ISSN:0003-6951    

DOI:10.1063/1.92162

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Striated microdefect distribution (swirl defects) are formed by the heat treatment in Czochralski‐grown silicon crystals. The striation observed by etching has two period components 1–2 mm and 300–500 &mgr;m along growth direction. The corresponding microdistribution of oxygen was examined by the scanning infrared absorption method with the collimated beam of 100 &mgr;m in diameter. The results show that the distribution with the period of 1–2 mm was only observed, but not the microdistribution with the period of 300–500 &mgr;m. It is proposed from the results that microdefects are originated at a high oxygen‐concentration region from the nuclei which were introduced in a striated pattern with the period of 300–500 &mgr;m during crystal growth. The nucleus is not interstitial oxygen itself.

ISSN:0003-6951    

DOI:10.1063/1.92163

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Vacuum‐evaporated pure amorphous silicon films have been successfully hydrogenated in a Theta‐pinch plasma source to give high photoconductivity. Unlike films produced by glow discharge of silane gas, these films are highly stable against heat, intense light illumination, moisture, and other atmospheric contamination. Structural change in the bulk Si matrix being absent, a comparison of properties of films before and after plasma treatment can provide valuable information on pure hydrogenation effects.

ISSN:0003-6951    

DOI:10.1063/1.92164

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Microstructures of furnace‐ and laser‐annealed silicon containing implanted oxygen and carbon were studied by transmission electron microscopy. Implanted oxygen atoms tend to cluster resulting in twins at the damaged regions, while dislocation loops and small precipitates were observed throughout in carbon‐implanted silicon after furnace annealing. A low density of dislocations was observed in the oxygen‐implanted, laser‐annealed, and subsequently heat‐treated silicon. All the atomic distributions reported in the previous paper were well correlated with the microstructure of the specimens.

ISSN:0003-6951    

DOI:10.1063/1.92165

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A thin‐film field‐effect transistor has been fabricated using glow‐discharge amorphous silicon as the semiconductor and silicon nitride as the insulator. The transistor operates in the electron (ntype) accumulation mode and by changing the gate potential from zero to only 3 V a change in the source‐drain conductance of greater than four orders of magnitude is obtained. The results imply upper limits to the density of gap states in amorphous silicon and interface states at the amorphous silicon‐silicon nitride interface of 3×1016cm−3 eV−1and 5×1011cm−2 eV−1, respectively.

ISSN:0003-6951    

DOI:10.1063/1.92166

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A method to eliminate oval defects from GaAs films grown by molecular beam epitaxy is presented. It appears that gallium oxide in the Ga melt is the major cause for this surface defect. A simple precaution of suppressing oxidation of gallium virtually eliminated oval defects.

ISSN:0003-6951    

DOI:10.1063/1.92167

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A shallowp+layer with a steep boundary was obtained by Zn ion implantation and a capless annealing in an arsenic ambient. A capped annealing with a plasma deposited Si3N4film resulted in a carrier concentration profile broadened by the diffusion enhanced by the interfacial stress between the capping film and the semiconductor. Thep+layer had a peak carrier concentration of 8×1019cm−3and a thickness of less than 1000 A˚. Arsenic pressure in the annealing ambient also suppressed the enhanced diffuison of Zn in the ion‐implanted GaAs.

ISSN:0003-6951    

DOI:10.1063/1.92135

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Interface segregation coefficients have been measured for Bi in Si for melt growth as a function of velocity for (111) and (100) crystals. Surface layers were melted by ruby laser irradiation and liquid‐solid interface velocities varied from 0.8 to 5 m/s by changing Si substrate temperatures or laser pulse length. Segregation coefficients are strongly dependent on velocity and orientation in this range.

ISSN:0003-6951    

DOI:10.1063/1.92136

出版商:AIP    

年代:1981

数据来源: AIP