21. |
Light Amplification in a Thin Film |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 313-314
M. S. Chang,
P. Burlamacchi,
C. Hu,
J. R. Whinnery,
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摘要:
Light amplification at 6328 Å in a rhodamine‐B‐doped polyurethane thin film is observed. The light‐guiding thin film is pumped transversely with a nitrogen laser. Superradiant light of the dye‐doped film is observed to be guided by the thin film. When a He&sngbnd;Ne light at 6328 Å is coupled into the same thin film along the same path, amplification results. Maximum unsaturated gain on the order of 13 cm−1was experimentally determined by two different methods in a single‐mode thin‐film light guide with a concentration of 3.3×10−2mol/liter when wet.
ISSN:0003-6951
DOI:10.1063/1.1654163
出版商:AIP
年代:1972
数据来源: AIP
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22. |
Effect of Hydrogen on CO2TEA Lasers |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 315-316
Thomas F. Deutsch,
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摘要:
The addition of several Torr hydrogen to a transversely excited pulsed high‐pressure CO2laser using continuous shaped electrodes has been found to suppress the formation of bright arcs and lead to better pulse‐to‐pulse reproducibility. The hydrogen increases the threshold energy for arc formation and leads to as much as a factor of 2 increase in the power output of the laser. The gain of the laser is also increased by the addition of hydrogen.
ISSN:0003-6951
DOI:10.1063/1.1654164
出版商:AIP
年代:1972
数据来源: AIP
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23. |
Green Electroluminescence in ZnSe&sngbnd;ZnTe Heterojunctions by Liquid‐Phase Epitaxial Growth |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 317-318
Shigeo Fujita,
Seiichi Arai,
Kunio Itoh,
Fumi Moriai,
Tadao Sakaguchi,
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摘要:
ZnSe&sngbnd;ZnTe heterojunctions prepared by liquid‐phase epitaxial growth method exhibited green electroluminescence with the peak of about 5350 Å at 77°K. The photoluminescence at 77°K from uv excitation was also measured and it was found that the green emission seems to result from hole rather than electron injection.
ISSN:0003-6951
DOI:10.1063/1.1654165
出版商:AIP
年代:1972
数据来源: AIP
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24. |
Increase of Dislocation Density in Ice by Dissolved Hydrogen Fluoride |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 319-320
Stephen J. Jones,
Narendra K. Gilra,
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摘要:
X‐ray topography shows that at − 18°C small amounts of hydrogen fluoride diffused into ice single crystals increased the density of dislocations by a factor of about 5 by introducing both prismatic dislocation loops and additionalb=〈112¯0〉 dislocations.
ISSN:0003-6951
DOI:10.1063/1.1654166
出版商:AIP
年代:1972
数据来源: AIP
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25. |
Distortion of the Central Resonance in Long Interdigital Transducers |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 320-322
M. R. Daniel,
P. R. Emtage,
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摘要:
Experiments are reported showing that the central resonance in long uniform interdigital transducers is distorted and the bandwidth reduced. These phenomena are shown to result from back‐piezoelectric effects.
ISSN:0003-6951
DOI:10.1063/1.1654167
出版商:AIP
年代:1972
数据来源: AIP
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26. |
Fast CO2‐Laser Modulation by Hot Carriers |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 322-323
K. ‐H. Mu¨ller,
G. Nimtz,
M. Selders,
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摘要:
Experiments carried out withn‐germanium have shown that hot carriers modulate the transmission of the radiation of CO2lasers. The modulation is very fast and theoretically limited only by the relaxation time of the carriers, which is of the order of 10−12sec.
ISSN:0003-6951
DOI:10.1063/1.1654168
出版商:AIP
年代:1972
数据来源: AIP
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27. |
Formation of Injecting and Blocking Contacts on High‐Resistivity Germanium |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 323-325
G. Ottaviani,
V. Marrello,
J. W. Mayer,
M‐A. Nicolet,
J. M. Caywood,
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摘要:
The behavior of Al and Sb/Ge/Sb layers evaporated on high‐purity Ge and heat treated at 280 °C is studied by reverse‐recovery, double‐injection, and nuclear‐particle‐response techniques. The results indicate that the contacts have the injection and blocking characteristics ofp‐ andn‐type material, respectively. Backscattering measurements with 1.8‐MeV4He+ions show that solid‐solid reactions occur.
ISSN:0003-6951
DOI:10.1063/1.1654169
出版商:AIP
年代:1972
数据来源: AIP
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28. |
Solid‐Phase Growth of Ge from Evaporated Al Layer |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 326-327
J. M. Caywood,
A. M. Fern,
J. O. McCaldin,
G. Ottaviani,
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摘要:
Solid Al was used as a medium from which to grow Ge onto a substrate of crystalline Ge. Evidence for growth was obtained from MeV He+backscattering, which showed both Ge dissolution and growth can occur at the Ge/Al interface. Backscattering experiments also indicated transport from evaporated Ge through the Al medium to a crystalline Ge substrate. Diodes formed by temperature cycling a structure ofn‐type Ge/Al showed hole injection into the substrate during reverse‐recovery‐time measurements, confirming the expectation that Ge growth is present and is heavilyptype from incorporation of the Al solvent during growth.
ISSN:0003-6951
DOI:10.1063/1.1654170
出版商:AIP
年代:1972
数据来源: AIP
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29. |
Surface Motion Measurements on Surface Elastic Waves |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 328-329
M. W. Lawrence,
L. W. Davies,
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摘要:
The motion in the sagittal plane described by surface particles due to passage of a surface elastic wave has been accurately measured inY‐cutX‐propagating quartz. The motion was found to be retrograde elliptical with the major axis normal to the crystal surface. The ratio of longitudinal to transverse axes is 0.672 ± 0.005, a value in very good agreement with theory.
ISSN:0003-6951
DOI:10.1063/1.1654171
出版商:AIP
年代:1972
数据来源: AIP
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30. |
Erratum: Electron‐Beam Excitation of the Nitrogen Laser |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 329-329
R. W. Dreyfus,
R. T. Hodgson,
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ISSN:0003-6951
DOI:10.1063/1.1654173
出版商:AIP
年代:1972
数据来源: AIP
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