摘要:

Thermal profiles resulting from a laser‐induced melt‐quench cycle of a Te‐based chalcogenide film on Mylar have been determined. These data are combined with experimentally obtained crystallization rates of Weiseret al.to determine the extent ofcrystallizationthat may occur in regions adjacent to the laser‐produced amorphous region. A maximum fractional crystallization of less than 10−2is found which indicates that no crystalline halo is expected to surround such an amorphous region. Thus, the extent to which photocrystallization plays a role in these alloy materials appears still to be an unanswered question.

ISSN:0003-6951    

DOI:10.1063/1.1654630

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The intensity‐dependent rotation of elliptically polarized light by carbon disulfide is used to discriminate against low‐intensity laser light and pass high‐intensity pulses through crossed polarizers. The transmitted intensity is shown to be proportional to the third power of the incident intensity. This technique has been used to reduce base‐line noise and low‐intensity pulses in the output pulse train of a mode‐locked Nd : YAG oscillator.

ISSN:0003-6951    

DOI:10.1063/1.1654631

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

To the author's knowledge, this is the first letter on the dislocation structures generated in silicon wafers by thermal stresses. These dislocations were caused by cooling in a room‐temperature ambient on removal from a furnace. The ⟨110⟩ 60° type was dominant, although ⟨112⟩ dislocations were also observed. Their most important feature is that they tend to seek the shortest allowable paths in passing through the wafer thicknesswise. They often form fairly regular arrays in single or closely neighboring {111} planes, thus producing ensembles of etch pits (or mounds) that macroscopically resemble slip lines. The dislocation densities were often ∼104cm−2; these values agreed within an order of magnitude with those predicted by a simple stress relief mechanism.

ISSN:0003-6951    

DOI:10.1063/1.1654632

出版商:AIP    

年代:1973

数据来源: AIP