摘要:

A novel technique, based on a stress balance principle, is proposed to control residual stress magnitude in GaAs layers grown on Si substrates. It is demonstrated that, using a suitable GaAs1−xPxbuffer layer, room (300 K) or low (2 K) temperature stress‐free GaAs can be grown on Si (100).

ISSN:0003-6951    

DOI:10.1063/1.105634

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The thermal stability of dopant‐hydrogen complexes in hydrogenatedn‐ andp‐type GaAs(1–2×1017cm−3) has been determined by examining their reactivation kinetics in reverse‐biased Schottky diodes. The reactivation process is first‐order for all of the dopants, with thermal dissociation energies (ED) of 1.45±0.10 eV for SiAsacceptors, 1.25±0.05 eV for SiGadonors, 1.20±0.10 eV for SnGadonors, 1.25±0.10 eV for Zn acceptors, 1.35±0.05 eV for CAsacceptors, and 1.15±0.10 eV for Be acceptors. The dissociation frequencies (&ngr;) are thermally activated of the form &ngr;D= &ngr;0E−ED/kT, with the &ngr;0values in the range 1–5×1013s−1. The results are consistent with much of the H being present as H+inp‐type material, and H−inn‐type material.

ISSN:0003-6951    

DOI:10.1063/1.105635

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The heteroepitaxial growth of pure Ge films on (100) Si by an ultrahigh vacuum, chemical vapor deposition technique is reported for the first time. The growth mode is found to be critically dependent on the substrate temperature during deposition. Two temperature regimes for growth are observed. Between 300 and 375 °C, growth occurs in a two‐dimensional, layer‐by‐layer mode, with an activation energy of 1.46 eV. Above 375 °C, island formation is observed. In the low‐temperature regime the growth rate is controlled by a surface decomposition reaction, whereas in the high‐temperature regime the growth rate is controlled by diffusion and adsorption from the gas phase.

ISSN:0003-6951    

DOI:10.1063/1.105636

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We have applied low‐energy ion scattering to study the initial stage of InAs epilayer growth on GaAs by molecular‐beam epitaxy. We have first observed a characteristic variation of the scattered He intensity with respect to the incident angles of primary He+ions to the substrate surface. Then we have found a transition stage from the strained structure to the relaxed structure for the 4–15 monolayer thick InAs layer grown on GaAs substrate. Employing the method of surface shadowing for analysis of surface atomic steps, we have been able to observe the surface steps formation due to the island growth. We have discussed the correlation between the transition of growth process and the surface flatness from the standpoint of surface morphology.

ISSN:0003-6951    

DOI:10.1063/1.105637

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Selective GaAs fine stripe structures, aligned along ⟨011⟩ direction, were grown by atmospheric‐pressure metalorganic chemical vapor deposition using diethylgalliumchloride. The width of the (100) top surface of the triangle‐shaped selective epilayers could be changed from 0 to 25 nm by controlling the growth temperature, and was independent of the growth time. This phenomena can be explained by reevaporation enhancement effect of reactant species containing chloride and two‐dimensional nucleation.

ISSN:0003-6951    

DOI:10.1063/1.105638

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Defect levels produced by low‐dose H+bombardment of silicon with different phosphorus doping and oxygen content were investigated using transient capacitance spectroscopy. For vacancy‐related defects both the peak concentration and the half width of defect profiles depend only on the position of the Fermi energy. All defect profiles were found to be broader than the theoretical vacancy distribution. The broadening which increases with decreasing doping level is explained by a model based on electric‐field‐enhanced diffusion.

ISSN:0003-6951    

DOI:10.1063/1.105639

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We demonstrate liquid‐metal‐mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor‐liquid‐solid mechanism. The liquid‐metal phase at the interface is a Au‐Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular‐beam evaporator. The resulting films revealed high‐crystalline quality byinsituhigh‐energy ion scattering and channeling analysis andexsituby cross‐sectional transmission electron microscopy.

ISSN:0003-6951    

DOI:10.1063/1.105640

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

First‐principles pseudopotential calculations are used in conjunction with extensive experimental data on P and As‐derived acceptor states in ZnSe to develop a microscopic theory of their atomic and electronic properties. A structural model that explains the presence of both shallow and deep acceptor states, the thermal and optical quenching of photoluminescence lines, and the strongC3vsymmetry of the electron‐spin‐resonance (ESR) active state is derived. The primary result of the calculations is that aneutralacceptor possesses two atomic configurations: a metastable effective‐mass state with a small lattice relaxation labeleda0, and a deepA0state with a large lattice distortion which is responsible for most of the observed properties of acceptors in ZnSe. Nitrogen impurities are proposed to give rise to a shallow acceptor state in either the small or large‐lattice‐relaxed limits. Extension of the results to ZnTe is discussed.

ISSN:0003-6951    

DOI:10.1063/1.105641

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodiode has been achieved successfully by using one step liquid phase epitaxial growth. Only a single laser beam is emitted vertically from the substrate through the nearby 45° reflector. The highest output power achieved is 22 mW and the threshold current density is 1.92 kA/cm2. The ratio between photocurrent of the detector and the output power of laser diode is 0.32 &mgr;A/mW for the type I device and 1 &mgr;A/mW for the type II device.

ISSN:0003-6951    

DOI:10.1063/1.105642

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Electron trapping and oxide trap generation have been studied in polycrystalline‐Si gate metal‐oxide‐semiconductor (metal‐SiO2‐Si) capacitors in which F was introduced into the SiO2layer by implantation into the Si gate followed by a drive‐in process. Three key findings are presented: (i) consistent with previous reports, the fluorinated SiO2/Si interface becomes more resistant to ionizing radiation or hot‐electron damage; (ii) the incorporation of fluorine introduces electron traps with a small capture cross section of approximately 1×10−18cm2; and (iii) the presence of F suppresses the generation of new oxide traps under high‐field hot‐electron injection. Possible explanations are discussed.  

ISSN:0003-6951    

DOI:10.1063/1.105643

出版商:AIP    

年代:1991

数据来源: AIP