| 21. |
Study of two‐dimensional Gunn domain dynamics using a stroboscopic SEM |
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Applied Physics Letters,
Volume 33,
Issue 10,
1978,
Page 888-889
M. Masuda,
T. Ogura,
J. Koyama,
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摘要:
Two‐dimensional domain dynamics has been clarified in a cathode‐slanted planar Gunn diode under the pulse‐biased operation using a stroboscopic scanning electron microscope. Experimental results are in reasonable agreement with theoretical results.
ISSN:0003-6951
DOI:10.1063/1.90204
出版商:AIP
年代:1978
数据来源: AIP
|
| 22. |
Determination of surface‐ and bulk‐generation currents in low‐leakage silicon MOS structures |
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Applied Physics Letters,
Volume 33,
Issue 10,
1978,
Page 890-892
S. D. Brotherton,
A. Gill,
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摘要:
A technique is presented in which, by appropriately biasing a circular MOS capacitor surrounded by an annular electrode, it is possible to directly measure generation currents from controllably depleted surfaces. Knowledge of the surface‐generation velocity from this measurement then facilitates the correction of the usual MOS relaxation data to account for generation effects at peripheral surfaces. From the measurements presented, it is demonstrated that the technique is particularly useful for assessing state‐of‐the‐art low‐leakage devices.
ISSN:0003-6951
DOI:10.1063/1.90205
出版商:AIP
年代:1978
数据来源: AIP
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| 23. |
A dry‐etched inorganic resist |
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Applied Physics Letters,
Volume 33,
Issue 10,
1978,
Page 892-895
M. S. Chang,
J. T. Chen,
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摘要:
An as‐deposited As2S3thin film is employed as a negative working inorganic resist in lithographic applications. A CF4plasma is used to etch differentially for pattern delineation. A maximum etch rate ratio of 1.8 between the unexposed and exposed films is obtained. Ag‐photodoped As2S3is found to have a much slower etch rate in the CF4plasma. Grating patterns have been obtained using this dry process. The extension of this concept to conventional organic polymer resists is considered.
ISSN:0003-6951
DOI:10.1063/1.90206
出版商:AIP
年代:1978
数据来源: AIP
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| 24. |
Influence of film stress and thermal oxidation on the generation of dislocations in silicon |
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Applied Physics Letters,
Volume 33,
Issue 10,
1978,
Page 895-897
A. Bohg,
A. K. Gaind,
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摘要:
The experimental data presented here show that the generation of dislocations in Si along Si3N4edges is due to the cumulative effect of the Si3N4stress field near the nitride edge and to the point defects produced during thermal oxidation. Within our experimental range, the stress along the Si3N4edges alone is not sufficient to generate dislocations in silicon. We have determined a critical ratio of Si3N4thickness to SiO2thickness which does not lead to the generation of dislocations.
ISSN:0003-6951
DOI:10.1063/1.90207
出版商:AIP
年代:1978
数据来源: AIP
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