摘要:

Gated diode leakage current and minority‐carrier lifetime are compared between Si wafers extrinsically gettered with epitaxial misfit dislocations and reference homoepitaxial material. The stability and gettering efficiency of the interfacial misfit dislocations have been verified by measuring leakage currents of less than 1 nA/cm2for both gate depletion and accumulation for a large number of diodes. In either mode, the gated diodes with misfit dislocation gettering exhibited more than an order of magnitude lower leakage current than that produced by standard epi without misfit dislocations. In addition, minority‐carrier generation lifetimes greater than 2 ms were typical of material extrinsically gettered via misfit dislocations, while reference epi was two to three times lower. The lifetme was found to be uniform in the near‐surface region, but was drastically reduced in the immediate vicinity of the misfit locations, indicating that the defects may provide useful options in high‐speed devices, latch‐up control, and radiation hard devices.

ISSN:0003-6951    

DOI:10.1063/1.97765

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium‐containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II‐VI compounds possible at much lower temperatures.

ISSN:0003-6951    

DOI:10.1063/1.97766

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Epitaxial growth of &bgr;‐SiC on Si(511) substrates has been carried out. Single‐crystalline &bgr;‐SiC films without warpage and cracking are grown by chemical vapor deposition. The epitaxial orientation of the film is determined using x‐ray precession camera. The orientation is inclined as SiC(411)//Si(511) coincident with the [011¯] axis, which should be compared with the parallel epitaxial growth on Si(100) or Si(111).

ISSN:0003-6951    

DOI:10.1063/1.97767

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

When Ga or Al atoms are evaporated on a clean GaAs surface in an As‐free or a very low As pressure atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic is exploited for growing high‐quality GaAs and AlGaAs layers at very low temperatures by alternately supplying Ga and/or Al atoms and As4molecules to the GaAs substrate. Applying this method, AlGaAs‐GaAs single quantum well structures with excellent photoluminescence characteristics are grown at 300 °C.

ISSN:0003-6951    

DOI:10.1063/1.97768

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We have determined the phase diagram of the Y‐Ba‐Cu‐O system through structural, superconducting critical temperature and critical current density characterization. Our results show that a single‐phase compound with a stoichiometry YBa2Cu3Oyis responsible for the high‐temperature superconductivity (92.5 K) in this system.

ISSN:0003-6951    

DOI:10.1063/1.97769

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Thin superconducting, granular films of NbN/BN are investigated as photodetectors for pulsed, far‐infrared radiation. These films may be thought of as a random network of Josephson junctions. The absorption of photons causes the film resistance to increase. This is thought to occur by destroying the phase coherence of the Cooper pair wave function among the junctions. This resistance change can be used as a basis for a photodetector. It is found that the NbN/BN thin‐film detectors have response times faster than 1 ns, and sensitivities of about 0.7 V/W when terminated to 50 &OHgr;, at wavelengths of about 0.50 mm.

ISSN:0003-6951    

DOI:10.1063/1.97770

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The effects of adding Ti to TbFe and TbFeCo films with and without protective layers were studied. The addition of Ti improved the corrosion resistance of the films. The transmittance of TbFeCo films was reduced by a factor of 10 by the substitution of 5% Ti for Fe, and by a factor of 100 by the substitution of 10% Ti for Fe. Pit formations in TbFeCo during aging in a corrosive condition and immersion in a NaCl solution were almost completely eliminated by the substitution of 5% Ti for Fe. The Kerr rotation angle (&thgr;k) decreased slightly in TbFeCo by the substitution of 10% Ti for Fe, while improving the corrosion resistance.

ISSN:0003-6951    

DOI:10.1063/1.97771

出版商:AIP    

年代:1987

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.98270

出版商:AIP    

年代:1987

数据来源: AIP