摘要:

Experimental results for the electrodiffusion of antimony into ⟨111⟩p‐type silicon through thin SiO2films are reported.C‐Vplots of metal‐oxide‐semiconductor capacitors show thatn‐pjunctions are formed by the electrochemical process. The electrolytical doping profile is determined fromC‐Vdata in the depletion regime and it shows that the amount of antimony impurity ions in silicon can be controlled by means of the current‐time product of the electrodiffusion process.

ISSN:0003-6951    

DOI:10.1063/1.94648

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

An expression for the excitonic photoluminescence linewidth in intentionally undoped semiconductor alloys is derived. The dominant mechanism for the line broadening is due to the statistical potential fluctuations caused by the components of the alloy. These fluctuations are accounted for by using statistical arguments developed by Lifshitz and then related to the linewidth. Compositional dependence of the linewidth is derived. It is shown that the linewidth is strongly dependent on the short range disorder present in the alloy. The theoretical results are compared with the available low‐temperature photoluminescence data in GaAlAs.

ISSN:0003-6951    

DOI:10.1063/1.94649

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The redistribution and diffusion of vanadium in V‐doped high resistivity bulk as‐grown GaAs, in V‐doped GaAs ion implanted with V, and in high purity epitaxial layers grown on top of V‐doped substrates upon various thermal annealing processes are compared to that of Cr using secondary ion mass spectrometry. The thermal processes studied are typical for GaAs IC technology. V diffuses by one order of magnitude less than Cr in all cases investigated. Thus, from thermal stability point of view V‐doped GaAs substrates should be superior to Cr‐doped ones and probably also to the present so‐called ‘‘undoped’’ ones containing 1016cm−3EL2 compensators.

ISSN:0003-6951    

DOI:10.1063/1.94650

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Shallow (Rp∼20 nm) As and B‐doped layers in (100) silicon, formed by low‐energy ion implantation, have been investigated using conventional and high resolution transmission electron microscopy before and after either electron beam or furnace annealing. After annealing residual defects were observed in the region beyond the original amorphous/crystalline interface for both As and B implants and the nature of these defects and their stability was found to be relatively insensitive to a variety of annealing conditions. Lattice images of 10‐keV As‐implanted material indicated that a continuous amorphous layer was formed after implantation which regrew into perfect single crystal following electron beam processing for 1 s with a peak temperature of 900 °C.

ISSN:0003-6951    

DOI:10.1063/1.94651

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Raman spectra of single crystal Al0.3Ga0.7As encapsulated with Si3N4have been measured. The encapsulation is observed to alter certain low‐frequency spectral features below 250 cm−1associated with the disorder‐activated mode. The enhancement of the disorder‐activated mode intensities is attributed to the breakdown of symmetry selection rules by the strain field induced by the dielectric overlayer.

ISSN:0003-6951    

DOI:10.1063/1.94652

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Using secondary‐ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub‐boundaries in zone‐melting‐recrystallized silicon‐on‐insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub‐boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2layers.

ISSN:0003-6951    

DOI:10.1063/1.94653

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A new electron paramagnetic resonance spectrum observed in electron‐irradiated InP is analyzed and attributed to the PInantisite defect. The spectrum has an isotropicgvalue of 1.992±0.008 and a central hyperfine coupling of 0.092±0.005 cm−1with a 100%,I= 1/2 nucleus. Irradiation conditions for the observation of PInare described and comparison is made to antisites in GaP and GaAs.

ISSN:0003-6951    

DOI:10.1063/1.94654

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

High speed preparation of A1/nip/SnO2/indium tin oxide/Glass type amorphous Si solar cells from disilane is presented with emphasis on the boron doping profile during the intrinsic layer deposition. It was found that the cell characteristics strongly depend on the doping level and the profile of B2H6, and 8.05% and 6.85% conversion efficiencies were obtained with a linear graded doping profile at the deposition rates of 15 and 30 A˚/s, respectively.

ISSN:0003-6951    

DOI:10.1063/1.94625

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A chain circuit of direct coupled logic gates consisting of niobium nitride (NbN)‐lead (Pb) alloy electrodes has been fabricated. The junctions used were of 1.5 &mgr;m square and had a current density of 20 kA/cm2. A special sampling method with jitter of ±1.5 ps was used to precisely measure the short delay time. A minimum logic delay of 5.6 ps/gate has been obtained with a fan in=fan out=1 structure.

ISSN:0003-6951    

DOI:10.1063/1.94626

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Small superconducting magnets were fabricated with powder metallurgy processed Nb‐Al wire and with powder metallurgy processed multistrand Cu‐Nb–Sn wire with 19 tin cores. Tests in a background field of up to 15 T showed that short sample characteristics were achieved for three coils. Upper limits of resistivity were established for both powder metallurgy processed wires. The reacted wires in the magnets gave upper limits of resistivity at 10 T of less than 1.4×10−14&OHgr; cm for the Nb3Sn wire, and less than 9×10−13&OHgr; cm for the Nb‐Al wire.

ISSN:0003-6951    

DOI:10.1063/1.94627

出版商:AIP    

年代:1984

数据来源: AIP