摘要:

Both adsorbed reacted surface oxygen (surface oxide) and the dynamic implantation range of primary oxygen ions have been shown to influence secondary ion yields and complicate the interpretation of secondary ion mass spectrometry (SIMS) in‐depth analysis within the first few hundred angstroms of the surface. Surface oxide chemically enhances the secondary ion yield over the first few tens of angstroms. After removal of the surface oxide, the secondary ion emission yield reaches a minimum level, and enhancement of the secondary ion yield is then a function of the distribution of the implanted oxygen concentration. These effects have been studied on arsenic‐implant‐diffused and unimplanted single‐crystal silicon.

ISSN:0003-6951    

DOI:10.1063/1.1654881

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The superconductor‐semiconductor contact diode, or super‐Schottky‐barrier‐diode, has been examined theoretically and experimentally as a video detector of high‐frequency radiation. The measured noise‐equivalent power (NEP) of the device is believed to be the smallest value ever reported in the literature for video detection. Moreover, the high reliability established for the ordinary Schottky barrier diode is in evidence for the proposed diode. The doping of the semiconductor is chosen large enough so that electron tunneling dominates the volt‐ampere behavior of the diode. As such, forT<TcandV< &Dgr;, the diode exhibits a high degree of nonlinearity in its volt‐ampere characteristic. It is this nonlinearity that the super‐Schottky‐diode exploits. Initial results withp‐type GaAs at 1 °K have yielded an NEP of 2 × 10−15W/Hz1/2at 10 GHz.

ISSN:0003-6951    

DOI:10.1063/1.1654882

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A new method for the analysis of the high‐ and low‐frequency MOSC&sngbnd;Vcharacteristics is proposed to determine the interface‐state density in the presence of statistical fluctuations of the surface potential. This method provides simultaneously the mean oxide charge and the variance of its Gaussian distribution.

ISSN:0003-6951    

DOI:10.1063/1.1654883

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

During a study of the annealing of damage produced by high‐dose (1015–1016ions/cm2) arsenic implantations into Si, a stable high‐defect‐density structure was observed. It resulted from implantations through thin SiO2films covering the Si. Formation of the stable defect structure is related to the presence of the SiO2film during implantation, but not during annealing. Subsequent experiments indicate that knock‐on of oxygen by the As ions is not directly responsible for the effect.

ISSN:0003-6951    

DOI:10.1063/1.1654884

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A trapped plasma, dense electron‐hole pairs trapped in a semiconductorp+‐n‐n+structure, conventionally has been triggered by applying overdriven electrical fields to initiate impact ionization. In this letter it is shown that the trapped plasma also can be triggered by injecting electrons while electrical fields are held just below the critical level. In this new triggering mode, the injected electrons multiplied by impact ionization locally raise the electrical field, which thus further excites the impact ionization.

ISSN:0003-6951    

DOI:10.1063/1.1654885

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

We report 100% conversion of infrared photons into visible photons through three wave interactions in a nonlinear medium, present the first experimental evidence of overconversion, and confirm the classical theory of up‐conversion in the high‐conversion‐efficiency region. A laser pump light feedback technique is described that promises to make the process practical with modestly powerful pump lasers and less than perfect nonlinear crystals. The nonlinear medium used was a LiIO3crystal that cannot be 90° phase matched. The ``walk off'' that resulted helped make possible the attainment of 100% conversion efficiency.

ISSN:0003-6951    

DOI:10.1063/1.1654886

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

FeSi films have been rf sputtered on glass, fused silica, and Si substrates. Sputter targets of 2 and 7 wt% Si were used, and the film thickness was varied between 0.1 and 4 &mgr;m. Several films, especially those on glass in the 0.5‐&mgr;m‐thickness range, showed a characteristic roughly rectangular domain structure. The films were isotropic. The structure has been analyzed with the longitudinal magneto‐optic Kerr effect by rotating either the film or the demagnetizing field in the film plane. The magnetization made an angle of about 18° with the longer walls. A new magnetization process, ``wall rotation'', could be observed.

ISSN:0003-6951    

DOI:10.1063/1.1654887

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A processing technique to form V3Ga in composite wires of V and a Cu‐15.4 at. % Ga alloy is outlined. The structure sensitivity of the superconducting properties of V3Ga are demonstrated through quenching curve data. ImprovedJc(H) properties are obtained with decreasing reaction temperatures, superconducting layer thickness, and wire core diameter.

ISSN:0003-6951    

DOI:10.1063/1.1654888

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Several high‐resolution HgI2x‐ray detectors have been made from single crystals grown from the vapor phase. Hole and electron transport properties and detector electrical characteristics are described. Measured mobility‐lifetime product for electrons is 8×10−5cm2/V with a &mgr;eof 3 cm2/V sec. The mean energy per electron‐hole pair is 4.33 eV at 122 keV. Detectors up to 1 mm3are described, and a resolution as low as 850 eV at 300 °K in air has been obtained for 5.9‐keV x rays, which suggests possible x‐ray flourescence detection applications.

ISSN:0003-6951    

DOI:10.1063/1.1654889

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

It is shown that scanning display of diffraction patterns is possible with a fixed electron detector placed at the appropriate position in the final image in an electron microscope, if the direction of illumination is varied by means of deflection coils in the wobbler unit. The diameter of the specimen area selected for diffraction study can be as small as 100 Å, depending on detector dimensions and microscope magnification. This technique for microdiffraction has been demonstrated with samples of small gold particles evaporated on a collodion substrate.

ISSN:0003-6951    

DOI:10.1063/1.1654890

出版商:AIP    

年代:1973

数据来源: AIP