摘要:

Electroluminescence has been observed from a GaAlAs/GaAs heterojunction bipolar transistor. The absence of luminescence from the GaAlAs emitter confirms that compositional grading significantly enhances hole confinement. In addition, it is suggested that electroluminescence occurring from the radiative recombination of excess electrons in the base may cause significant cross talk between devices of an integrated circuit.

ISSN:0003-6951    

DOI:10.1063/1.95306

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Silicon ribbon with varying oxygen concentrations grown by the edge‐defined film‐fed growth technique has been annealed for periods of up to 1 h at 1200 °C prior to fabrication into solar cells. Low (<1×1016atom/cc interstitial) oxygen content ribbon cell performance, which is characteristically depressed with respect to higher (∼5×1016atom/cc interstitial) oxygen content ribbon, is improved by the anneal to levels approaching those observed in unannealed ribbon with the higher oxygen concentrations. The latter are essentially unaffected by the anneal. An explanation for ribbon cell property responses is proposed that is based on consideration of recombination effects associated with carbon microdefects.

ISSN:0003-6951    

DOI:10.1063/1.95307

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Hydrogenated amorphous silicon was grown from disilane by rf glow discharge. Deuterium (D) was used as a tracer gas in this investigation, in which two gas mixtures (Si2H6+D2and Si2D6+H2) were employed. Amorphous silicon so produced was analyzed for1H and D by Rutherford recoil measurement to determine whether these elements came from disilane or dilution gas. When the rf power is low, a much larger proportion of hydrogen atoms in disilane (1H in case of Si2H6, D in case of Si2D6) than in the dilution gas is found in the amorphous silicon. The exact reverse is true as the rf power becomes large.

ISSN:0003-6951    

DOI:10.1063/1.95308

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We demonstrate directly that {100} texturing of lamellae in radiantly melted silicon on SiO2derives from precursor seeds in the as‐deposited solid film. The anisotropic interfacial free energy between crystalline silicon and SiO2controls the orientation.

ISSN:0003-6951    

DOI:10.1063/1.95317

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The Si impurity is diffused (850 °C, 10 h,xj∼2.4 &mgr;m) into 2.4 &mgr;m of AlxGa1−xAs‐GaAs (x≳0.6) superlattice (barrierLB≊320 A˚, quantum wellLz≊280 A˚) and disorders it into bulk‐crystal Alx′Ga1‐x′As (x′≳0.32). The as‐grown infrared gap superlattice is converted selectively to red gap bulk crystal and, where undiffused and not disordered, is still capable of continuous 300‐K photopumped laser operation at a threshold of 4×103W/cm2(orJeq∼1.7×103A/cm2, 5145 A˚ pump photon).

ISSN:0003-6951    

DOI:10.1063/1.95318

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Miyazawaetal. [Appl. Phys. Lett.43, 853 (1983)] have recently established a spatial correlation between variations in field‐effect transistor performance and nonuniformities in the cathodoluminescence (CL) efficiency of semi‐insulating (SI) GaAs substrates. In this study, we compare the CL uniformity of both Cr‐doped and undoped SI GaAs crystals grown by the liquid‐encapsulated Czochralski (LEC) technique with undoped SI crystals grown by the horizontal gradient freeze (HGF) technique. In contrast to the LEC crystals, HGF GaAs has extremely uniform CL characteristics which should result in uniform device performance.

ISSN:0003-6951    

DOI:10.1063/1.95293

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Up‐converted band to band luminescence generated by photons with energy lower than the band gap has been observed in high purity GaAs and GaAlAs epitaxial layers as well as in undoped melt‐grown GaAs. This is explained by assuming a two‐step excitation process involving a deep center as intermediate state. Since ecah crystal investigated has shown this effect, we conclude that intrinsic defects in pure GaAs and GaAlAs crystals provide the deep levels necessary for the up conversion.

ISSN:0003-6951    

DOI:10.1063/1.95319

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Interface states in the metal‐oxide‐semiconductor (MOS) system have a great influence on the electrical properties of MOS capacitors and field‐effect transistors. Several methods for measuring the density of these interface states within the forbidden band gap of silicon employ differential capacitance versus gate bias (C‐V) measurement on MOS capacitors. We present here aC‐Vmeasurement technique utilizing the MOS transistor that extends the energy range of the high‐low frequency method to that of the low‐frequency technique.

ISSN:0003-6951    

DOI:10.1063/1.95320

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Liquid phase epitaxy of (AlzGa1−z)xIn1−xAsyP1−ypentanary is reported for the first time. The pentanary of (Al0.05Ga0.95)0.55In0.45As0.07P0.93is grown successfully on a (100) oriented GaAs substrate by liquid phase epitaxy using a two‐phase solution growth technique atTg=845 °C. Existence of Al in the epitaxial layer is determined by x‐ray microanalyzer, x‐ray diffractometer, and photoluminescence. The growth conditions of the (AlGa)InAsP pentanary are also discussed.

ISSN:0003-6951    

DOI:10.1063/1.95321

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We report on deep‐ultraviolet (UV), light‐assisted wet etching of GaAs. The etching chemistry differs from that using visible wavelengths and all doping types of GaAs can be efficiently etched. The UV processing offers rapid etching at low, nonthermal laser intensities and permits very deep, vertical features to be made.

ISSN:0003-6951    

DOI:10.1063/1.95281

出版商:AIP    

年代:1984

数据来源: AIP