摘要:

The photoinduced motion of a As2S8film‐mica substrate system has been observed during He&sngbnd;Cd laser beam irradiation on the surface of the evaporated region. Experimental results using a prestressed mica substrate during the evaporation show that this phenomenon is a ``photoinduced relaxation'' effect.

ISSN:0003-6951    

DOI:10.1063/1.1655529

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Using the spectral distribution of the optical emission rates it is shown that the gold acceptor energy level in silicon is probably pinned to the conduction band in the temperature range between 90 and 242 K.

ISSN:0003-6951    

DOI:10.1063/1.1655530

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

By using the simultaneous exposure and development technique, high‐resolution relief gratings with periods as small as 2400 Å have been produced which have grooves cleanly developed down to the substrate surface and exposing wide surface stripes with clearly defined, sharp and narrow photoresist ridges. Such gratings are suitable for use as masks in ion‐beam machining and chemical etching. Results of chemically etched gratings into glass substrates with a 5000‐Å period are presented and prospects of obtaining chemically etched gratings with shorter periods are discussed.

ISSN:0003-6951    

DOI:10.1063/1.1655531

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Measurements of photoconductivity versus intensity and temperature, photoconductivity decay, thermoelectric power versus temperature, and field effect have been extended to several binary amorphous semiconductors: Sb2Te3, As2Te3, As2Se3, and Ge2Te7, to be compared with earlier measurements on As2SeTe2and Ge3Se2Te4and more complex multicomponent chalcogenides. Analogous behavior is found in all these materials: about 1019cm−3eV−1localized recombination levels within about 0.1 eV of the gap edges; about 1019cm−3eV−1localized levels near the equilibrium Fermi level; thermally activated mobility with activation energy of the order of 0.1–0.2 eV. Crystallization produces an increase in photoconductivity at 100°K by over a factor of 106.

ISSN:0003-6951    

DOI:10.1063/1.1655532

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The effect of longitudinal phonons on a very wide Dayem bridge involving amplitude voltage steps &Dgr;V=hv/2eof the detected echoes has been measured. The mechanism seems to be related to the motion of the vortices created by the dc bias current.

ISSN:0003-6951    

DOI:10.1063/1.1655533

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Operation of a DRO single flux quantum Josephson junction memory cell is described. Writing and sensing is performed with coincident currents. The device acts as its own sense detector, switching to the gap voltage if a flux quantum was stored. Dense arrays not requiring standby power are potentially feasible.

ISSN:0003-6951    

DOI:10.1063/1.1655534

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

We have made what we believe is the first experimental observation of the switching transients resulting from single flux quantum transitions in superconducting devices. For that purpose, we used ``long'' Josephson junctions or interferometers which exhibit overlapping vortex modes. By applying a magnetic field to such devices, vortex‐mode transitions are induced. The resulting transients are detected by a small Josephson junction located nearby. The experimental results show unambiguously that the points where a signal is detected by the sense junction correspond to the vortex‐mode boundaries of the device. These results have important implications for memory applications.

ISSN:0003-6951    

DOI:10.1063/1.1655535

出版商:AIP    

年代:1974

数据来源: AIP