摘要:

Thermal‐emission‐rate measurements, including DLTS, have been made on thallium‐doped gated diode structures fabricated using an implanted thallium source. The rate of thermal emission was found to be strongly field dependent, giving results comparable to the prediction of the simple Poole‐Frenkel model. The field‐free trap separation from the valence‐band edge was determined to be 0.24 eV, with a hole‐capture cross section of 2.4×10−14cm2.

ISSN:0003-6951    

DOI:10.1063/1.90231

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Annealing of boron‐implanted silicon by a single 15‐&mgr;sec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.

ISSN:0003-6951    

DOI:10.1063/1.90232

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Three traps found inn‐type InP with emission activation energies &Dgr;Ee=0.43, 0.59, and 0.63 eV are analyzed. The position of the energy levels for these traps, relative to the lowest conduction‐band minimum &Ggr;, areET=0.34, 0.20, and 0.24 eV, respectively. It is shown that the 0.43‐eV trap emits to and captures electrons from the &Ggr; minimum and exhibits a thermally activated capture cross section with a barrier energy of 0.09 eV. Very good agreement is found between the capture cross sections derived from capture and from emission experiments: &sgr;∞=3.4×10−15and 5.8×10−15cm2, respectively. It is concluded from detailed emission and capture studies that the 0.59‐ and 0.63‐eV traps emit and capture carriers via the higher‐lyingLminima. A value of 0.39 eV for the intervalleyL‐&Ggr; energy separation is consistent with the observed emission and capture properties of both centers.

ISSN:0003-6951    

DOI:10.1063/1.90233

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The presence of small amounts of some solute elements in gold thin films causes a reversal of the failure site during an electrotransport experiment. The effectiveness of a solute element in accomplishing this reversal is not correlated with melting point, solubility, or atomic radius. However, solute elements that produced a reversal in gold films (sodium, indium, barium) all have low ionization energies. Auger electron spectroscopy revealed that sodium from a microscope glass substrate penetrates through a gold film to its free surface during current stressing or during furnace annealing.

ISSN:0003-6951    

DOI:10.1063/1.90217

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Lattice deformations and misfit dislocations are studied by x‐ray double‐crystal diffraction and topography for GaInAsP/InP double‐heterostructure layers epitaxially grown on (001) InP substrates. No misfit dislocation was observed at the interfaces when the misfits &Dgr;a⊥/abetween the lattice constants normal to the wafer surface of GaInAsP (0.4 &mgr;m thick) and InP layers are within about 5×10−3. The unit cell of the GaInAsP epitaxial layer is tetragonally deformed due to the interface lattice misfit such that the lattice constant parallel to the wafer surface is nearly invariant across the GaInAsP/InP interfaces in the DH wafers both with and without misfit dislocations for ‖&Dgr;a⊥/a‖<6.4×10−3.

ISSN:0003-6951    

DOI:10.1063/1.90236

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We report the formation of Ohmic contacts to high‐dose (∼1016cm−2) Te‐implantedn‐type GaAs annealed with aQ‐switched Nd : YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistancerc≃2×10−5&OHgr; cm2were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 A˚ of GaAs, thereby exposing a surface of high Te concentration.

ISSN:0003-6951    

DOI:10.1063/1.90237

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A study has been undertaken to determine the effect of ion‐implanted fluorine on the properties of SiO2for use as a gate dielectric in MOS devices.C‐Vmeasurements and bias‐temperature stressing showed that mobile‐ion drift can be compensated for by the implanted ions. Further tests showed that it is the implant damage and not the ion itself which was responsible for the compensation. uv excitation of the samples was used in an attempt to identify the nature of the compensation effect, but the results are not definitive.

ISSN:0003-6951    

DOI:10.1063/1.90238

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Time‐instability measurements of the capacitance‐voltage (C‐V) characteristics of InSb MIS devices show that the flatband voltage shift followsVG=K(V)  log(1+t/&tgr;) and appears to be caused by tunneling of free carriers from the semiconductor surface into insulator traps. The analysis of such a mechanism emphasizes the influence of the semiconductor band‐gap width on the values ofKfor InSb substrates at 77 °K leading to about a 100 times larger instability than silicon sustrates at 300 °K for an equal value of the insulator trap density.

ISSN:0003-6951    

DOI:10.1063/1.90239

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Plastic stress‐strain characteristics of V3Si single crystals, oriented for [110] compression, have been ascertained under dynamic conditions between 1200 and 1800 °C. This is believed to be the first such report on the A‐15 compound superconductors. In the range 1200–1500 °C, yield strength is very temperature sensitive, whereas the sensitivty is not very pronounced between 1600 and 1800 °C. In addition, substructures introduced by a ∼7% compressive strain at different temperatures appear to have no deleterious effects on transition temperatures and transition widths.

ISSN:0003-6951    

DOI:10.1063/1.90216

出版商:AIP    

年代:1978

数据来源: AIP