摘要:

Mesa and planar InPp‐njunction diodes have been fabricated by beryllium‐ion implantation. These devices exhibit abrupt reverse‐bias breakdowns and low leakage currents. Similar mesa diodes have been produced in In1−xGaxAsyP1−y(Eg≈1.0 eV). Diodes operated in the punch‐through mode exhibited uniform breakdown over the area of the device, without any apparent edge effects.

ISSN:0003-6951    

DOI:10.1063/1.90740

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Display structures based on reversible electrodeposition (RED) in organic solvent based electrolytes containing tetra‐alkyl ammonium iodide, ammonium iodide, and silver iodide have been studied. Cells were made up with these electrolytes together with a mixed opacifier containing a semiconducting oxide (such as impure TiO2) and an insulator (such as a very fine zeolite powder). The cells develop bistable characteristics which permit operation with good contrast (between deep burgundy and white) at drive voltages of less than 2 V while operating at 0.5 Hz. Contrast ratio, optical density, efficiency, and memory time were measured. Probable mechanisms for the development of bistable characteristics and the nature of the deposits are discussed.

ISSN:0003-6951    

DOI:10.1063/1.90748

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The localized state density distribution in the mobility gap of glow‐discharge amorphous silicon has been determined from capacitance‐voltage characteristics for metal/oxide/amorphous silicon (MOS) structures. This new method provides a smooth distribution of localized states throughout the mobility gap. The density of states increases from a minimum of the order of 1016cm−3 eV−1near midgap to more than 1018–1019cm−3 eV−1within 0.2 eV of the band edges.

ISSN:0003-6951    

DOI:10.1063/1.90749

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

ISSN:0003-6951    

DOI:10.1063/1.90750

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Previously unreported two‐dimensional lattice mismatch in planes parallel to the interfacial boundary between the (001) Ga0.65Al0.35As epitaxial layer and the GaAs substrate has been observed by utilizing a four‐beam, (000), (400), (220), and (22¯0), simultaneous Borrmann diffraction of x rays. The shifts of the reflection bands of the layer from the reflection lines of the substrate indicate that shear stresses exist in ⟨100⟩ and ⟨010⟩ directions and that the corresponding strains vary continuously along the thickness direction of the epilayer.

ISSN:0003-6951    

DOI:10.1063/1.90751

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The mechanical properties ofinsituCu–36 wt&percent; Nb–xwt&percent; Sn superconducting wires are presented where 5<x<20 wt&percent; Sn. For highx, no degradation of critical currentJcis observed for stresses &sgr; up to 700 MPa (∼100 ksi) and a maximumJcoccurs at &sgr;≃450 MPa. Strains of ∼0.6–0.9&percent; are measured at 300 and 77 K for 450 MPa, and ∼1.5–2&percent; for 700 MPa. Cyclic stress data are consistent with a prestress model for composite materials.

ISSN:0003-6951    

DOI:10.1063/1.90752

出版商:AIP    

年代:1979

数据来源: AIP