摘要:

We report a quantitative comparison of the trapping rates of carriers at charged and neutral dangling bonds in hydrogenated amorphous silicon (a‐Si:H). The data are obtained from time‐of‐flight photoconductivity studies of doped and undoped samples. The temperature dependence of the trapping rates, as well as the effect of boron doping on the hole drift mobility, is also reported.

ISSN:0003-6951    

DOI:10.1063/1.94441

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Very strong capacitance‐voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small‐signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority‐carrier profile in lightly doped or low mobility semiconductors.

ISSN:0003-6951    

DOI:10.1063/1.94442

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A study of the hydrostatic pressure dependence of the electron capture cross section of theBhole trap in liquid phase epitaxial gallium arsenide has revealed that this cross section is strongly affected by pressure. The results are consistent with, and provide support for, the multiphonon emission model for the capture process at this trap.

ISSN:0003-6951    

DOI:10.1063/1.94443

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The effect ofinsituthermal annealing prior to hydrogen implantation is reported on vacuum evaporated amorphous silicon. By performing a 400 °C anneal for 4 h immediately following film deposition the film porosity is greatly reduced. The film is then implanted with hydrogen to a dose of 5×1016/cm2. A field‐effect conductance change of six orders of magnitude was observed which yielded a density of localized states near the Fermi level of 4×1017/cm3eV.

ISSN:0003-6951    

DOI:10.1063/1.94444

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The effect of the silicon thermal nitridation processes, nitridation of SiO2(oxynitridation), and direct nitridation of the silicon surface on boron and phosphorus diffusion is examined. It is found that oxynitridation results in enhanced diffusion of both impurities while direct nitridation of the silicon surface causes retarded diffusion for both. These phenomena are explained by the mechanisms of silicon self‐interstitial injection in the case of oxynitridation and self‐interstitial depletion in the case of direct nitridation.

ISSN:0003-6951    

DOI:10.1063/1.94445

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

X‐ray lithography was studied, using laser‐produced plasma as a source. A single target shot of a frequency‐tripled Nd:glass laser (&lgr;=0.35 &mgr;m, 35 J in 1 ns) was found to be sufficient for submicron x‐ray lithography in poly(butene‐1‐sulfone) (PBS) or poly(glycidyl‐methacrylate‐ethyl acrylate) (COP) resists. The incident x‐ray flux is about an order of a magnitude smaller than that normally required. This behavior could be the result of the transient character of the exposure and an abrupt rise in the resist temperature.

ISSN:0003-6951    

DOI:10.1063/1.94535

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A theory of alloy scattering of two‐dimensional electron gas in ternary semiconductors is developed by assuming spherically symmetric square scattering potential, randomly distributed between two kinds of alloy sites. The theory predicts a temperature independent mobility, in agreement with the experimental results for In0.53Ga0.47As. The calculated value at 4.2 K comes close to the experimental value, in which the effect of impurity scattering has been reduced by using an undoped spacer layer. It is concluded that the study of two‐dimensional transport in the devices may lead to a correct estimation of the alloy scattering potential.

ISSN:0003-6951    

DOI:10.1063/1.94446

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Direct thermal nitridation of silicon in a nitrogen plasma has been performed above 1000 °C. From Auger electron spectroscopy analysis, the formed films contain some oxygen and are identified as oxynitride films. Refractive indices of these films varied from 1.5 to 1.9 with nitridation time. The film thickness is about 40 A˚ after nitridation of 10 h at 1145 °C and the film growth is saturated at this value. Capacitance‐voltage characteristics of Al gate metal‐nitride‐semiconductor capacitors show a stable behavior. The fixed charge densityQssis estimated to be on the order of 1012cm−2.

ISSN:0003-6951    

DOI:10.1063/1.94447

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A dc superconducting quantum interference device used as a radio‐frequency amplifier has achieved a power gain of 19.5±0.5 dB and a noise temperature of 1.0±0.4 K at a frequency of 100 MHz and an operating temperature of 1.5 K.

ISSN:0003-6951    

DOI:10.1063/1.94448

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Powder metallurgy processed multifilamentary Cu‐Fe, Cu‐Ni, and Nb‐Ni ferromagnetic composite wires were fabricated with a relatively high coercive fieldHcat room temperature. Compacts of Cu‐36 wt. % Fe, Cu‐36 wt. % Ni, and Nb‐36 wt. % Ni powders were reduced in cross section to produce ferromagnetic multifilamentary materials. Nominal areal reduction ratios of 108for Cu‐36 wt. % Fe and 104for Nb‐36 wt. % Ni and Cu‐36 wt. % Ni resulted in values ofHc∼195 Oe, 94 Oe, and 77 Oe, respectively. A final 300 °C anneal of the Cu‐36 wt. % Fe composite gaveHc∼460 Oe. The average ferromagnetic fiber diameters are estimated to be 100–1000 A˚ for the Fe fibers and are about 1 &mgr;m for the Ni fibers.

ISSN:0003-6951    

DOI:10.1063/1.94449

出版商:AIP    

年代:1983

数据来源: AIP