21. |
Tunneling escape time of electrons from a quantum well under the influence of an electric field |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 60-62
T. B. Norris,
X. J. Song,
W. J. Schaff,
L. F. Eastman,
G. Wicks,
G. A. Mourou,
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摘要:
We have performed time‐resolved photoluminescence on GaAs/AlxGa1−xAs single quantum well structures with an electric field applied perpendicular to the well plane. The quantum wells are coupled to the GaAs continuum through a thin barrier; the escape time of the electrons in the well was measured by time‐resolved photoluminescence. The dependence of the decay time on applied bias was found to agree very well with a simple semiclassical model.
ISSN:0003-6951
DOI:10.1063/1.100835
出版商:AIP
年代:1989
数据来源: AIP
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22. |
p‐type modulation‐doped HgCdTe |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 63-65
Jeong W. Han,
S. Hwang,
Y. Lansari,
R. L. Harper,
Z. Yang,
N. C. Giles,
J. W. Cook,
J. F. Schetzina,
S. Sen,
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摘要:
At North Carolina State University, we have recently employed photoassisted molecular beam epitaxy to successfully preparep‐type modulation‐doped HgCdTe. The modulation‐doped HgCdTe samples were grown on lattice‐matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center. In this letter, we report details of the growth experiments and describe the structural, optical, and electrical properties that this new infraredquantumalloyof HgCdTe possesses.
ISSN:0003-6951
DOI:10.1063/1.100836
出版商:AIP
年代:1989
数据来源: AIP
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23. |
Observation of a two‐dimensional hole gas in boron‐doped Si0.5Ge0.5/Ge heterostructures |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 66-68
G. R. Wagner,
M. A. Janocko,
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摘要:
The Hall mobility and magnetoresistance of Si0.5Ge0.5/Ge heterostructures grown by molecular beam epitaxy have been studied in the temperature range 1.5<T<300 K. Shubnikov–de Haas oscillations observed atT=1.5 K indicate that selective doping of the alloy with boron generates a two‐dimensional hole gas in the Ge. The oscillation period yields a surface carrier density of 2×1012cm−2, in reasonable agreement with the value of 3×1012cm−2obtained by Hall measurements. The mobility atT=4.2 K in a sample with an undoped alloy setback layer of 4 nm was &mgr;H=3.2×103cm2/V s and in other samples was found to decrease with decreasing setback layer thickness.
ISSN:0003-6951
DOI:10.1063/1.100837
出版商:AIP
年代:1989
数据来源: AIP
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24. |
Novel features of rapidly quenched melts of Bi2(Ca,Sr)3Cu2O8+&dgr; |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 69-71
K. B. R. Varma,
K. J. Rao,
C. N. R. Rao,
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摘要:
By roller quenching and water quenching melts of Bi2(Ca, Sr)3Cu2O8+&dgr;, glasses have been obtained. These glasses exhibit two glass transitions as well as two crystallization transitions. Microwave absorption studies show the glass to be weakly superconducting at 77 K, probably due to the presence of ultramicrocrystallites. The glass on crystallization at 870 K gives the crystallinen=1 member of the homologous series Bi2(Ca, Sr)n+1CunO2n+4and then=2 member on annealing at 1100 K. The glass route provides a unique means of obtaining then=2 member of the series. On prolonged annealing of the glass at 1120 K, then=3 member seems to be formed.
ISSN:0003-6951
DOI:10.1063/1.101436
出版商:AIP
年代:1989
数据来源: AIP
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25. |
Anisotropic critical current density in superconducting Bi2Sr2CaCu2O8crystals |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 72-74
S. Martin,
A. T. Fiory,
R. M. Fleming,
G. P. Espinosa,
A. S. Cooper,
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摘要:
Critical current densities and resistivities were measured in a single crystal of the highTcsuperconductor Bi2Sr2CaCu2O8within theabbasal plane (∥) and along thecdirection (⊥). A large anisotropy in critical current density is found,Jc∥/Jc⊥≊103, in quantitative agreement with the large normal‐state resistivity anisotropy nearTc. The data provide strong evidence for a two‐dimensional layered structure of metallic planes separated by semi‐insulating barriers.
ISSN:0003-6951
DOI:10.1063/1.101437
出版商:AIP
年代:1989
数据来源: AIP
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26. |
Narrow tracks in YBa2Cu3O7thin films defined by laser ablation |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 75-77
R. G. Humphreys,
J. S. Satchell,
N. G. Chew,
J. A. Edwards,
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摘要:
The use of cw laser ablation for defining narrow tracks in YBa2Cu3O7thin films on (001) SrTiO3substrates is described. Critical current densities have been observed up to 5×105A/cm2in 4‐&mgr;m‐wide tracks at 77 K. For these films, it is found that the value of critical current density calculated is insensitive to the length of track and the voltage criterion used.
ISSN:0003-6951
DOI:10.1063/1.101438
出版商:AIP
年代:1989
数据来源: AIP
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27. |
Magnetization and domain structure of cylinders and spheres in subsaturating fields |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 78-80
P. Bryant,
H. Suhl,
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摘要:
We explore the magnetization patterns and domain walls which may occur in ferromagnetic cylinders and spheres in a certain range of sizes, placed in a uniform external magnetic field below saturation. The solutions found are field‐free inside the sample. The analysis is explicitly carried out for circular and elliptic cylinders and spheres, and may be extended to general ellipsoids.
ISSN:0003-6951
DOI:10.1063/1.100838
出版商:AIP
年代:1989
数据来源: AIP
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28. |
Insight into the dynamics of trimethylaluminum photolysis |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 81-83
G. S. Higashi,
M. L. Steigerwald,
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摘要:
Abinitiomethods (Hartree–Fock, generalized valence bond, and configuration interaction) have been used to characterize the electronic states of molecular analogs to trimethylaluminum. An understanding of the mechanism of photoexcitation and subsequent dissociation emerges as the calculations reveal that optical excitation results in a metastable bound state rather than a directly dissociative state. The substantial excess energy associated with the transition is stored in electronic and vibrational degrees of freedom other than those associated with the dissociation coordinate. This interpretation allows a large body of observations to be simply understood and has implications for the implementation of the technology of laser photolysis for thin‐film deposition.
ISSN:0003-6951
DOI:10.1063/1.100840
出版商:AIP
年代:1989
数据来源: AIP
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29. |
Oscillator strength of rubyR1line under high pressure |
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Applied Physics Letters,
Volume 54,
Issue 1,
1989,
Page 84-85
Surinder M. Sharma,
Y. M. Gupta,
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摘要:
A recently observed rapid decrease in oscillator strength of2E(E¯)→4A2(R1line) of ruby with static pressure is quantitatively explained with the help of other observed spectral shifts and a scaling procedure used earlier to model wavelength shifts with pressure. Oscillator strength is also predicted to decrease forR’lines, but forBlines it increases with pressure.
ISSN:0003-6951
DOI:10.1063/1.100841
出版商:AIP
年代:1989
数据来源: AIP
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