摘要:

Unencapsulated, amorphous silicon indium tin oxide/n‐i‐p/stainless‐steel solar cells were tested for stability. All cells have excellent shelf life. Changes occur during exposure to light, but can be controlled by the deposition conditions of the amorphous silicon. The changes are due to trapping and recombination of optically generated carriers in theilayer, and are reversibly annealed out above 175 °C. Preliminary life tests on two relatively stable cells showed a small initial drop to 5%, followed by a weak logarithmic decay that predicts only ∼20% further decrease in efficiency after 20 years in sunlight. Work is continuing on improving the efficiency and stability of these cells.

ISSN:0003-6951    

DOI:10.1063/1.92865

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A high performance AlxGa1−xSb 1.3‐&mgr;m p‐i‐n photodiode, operating at a very low reach‐through voltage (−1.5 V), has been demonstrated for the first time. The low punch‐through voltage was achieved by growing extremely low doped liquid phase epitaxial layer (ND−NA≃4×1014/cm3). The capacitance is ≃0.4 pF and the dark current ≃20 nA at −1.5 V for a 10−4‐cm2device area. The zero bias external quantum efficiency is ?55% at 1.3 &mgr;m; the rise time is 100 ps and the full width at half‐maximum (FWHM) is 200 ps. These results indicate that p‐i‐n photodiodes comparable in performance to homojunction InGaAs p‐i‐n detectors can be fabricated with the AlGaSb alloy system.

ISSN:0003-6951    

DOI:10.1063/1.92874

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Direct time‐resolved measurements of the linear and nonlinear electronic impulse response of a high‐speed gallium arsenide metal semiconductor field‐effect transistor have been made by using picosecond optical pulses to drive high‐speed photoconducting electronic pulse generators and sampling gates. High resolution, jitter‐free measurements with excellent signal‐to‐noise showed the field‐effect transistor to have a fast full width at half‐maximum response of approximately 25 ps, and a slower fall time of 75 ps.

ISSN:0003-6951    

DOI:10.1063/1.92875

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We describe a process for high‐resolution pattern definition in tungsten films. The high etch ratio of tungsten to a Au/Pd durable mask in an SF6/O2plasma permits the use of a high‐resolution, thin resist, electron beam lithographic process. 200‐nm lines have been etched with vertical walls in 1000‐nm tungsten films.

ISSN:0003-6951    

DOI:10.1063/1.92876

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Native plasma oxides which are water insoluble have been grown on bothn‐ andp‐type epilayers of In0.53Ga0.47As. For each case, capacitance‐voltage measurements show that the surfaces can be varied from strong accumulation to strong inversion. The oxide resistivity is of order 1012&OHgr; cm, while the breakdown field is of order 106V/cm.

ISSN:0003-6951    

DOI:10.1063/1.92877

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Near‐infrared optical absorption in undoped bulk GaAs ingots is shown to be due essentially to the presence of the main deep donor EL2. Measurement of the corresponding absorption represents the first known method of quantitative determination of that level in semi‐insulating material. Furthermore, complete quenching of the corresponding absorption is shown to occur under high intensity illumination. This strong effect, reported for the first time, can be directly related to the existence of a metastable state for the level EL2 presenting a strong lattice relaxation.

ISSN:0003-6951    

DOI:10.1063/1.92852

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Solid‐phase epitaxial Si layers of uniform thickness have been grown at 400–500 °C by transport of Si atoms from an amorphous Si film through an Al film deposited on ⟨100⟩ single crystal or polycrystallinen‐type Si substrates. The epitaxial Si layers are stronglyptype due to Al doping, and good rectifying junctions are formed between these layers and the substrates. Solar cells with conversion efficiencies at AM1 of 10.4 and 8.5% have been fabricated on ⟨100⟩ Si and polycrystalline Si substrates, respectively, without the use of an antireflection coating or back‐surface field structure.

ISSN:0003-6951    

DOI:10.1063/1.92878

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2layers. Results of differential Fourier‐transformed infrared spectroscopy and transmission electron microscopy confirm the formation of oxide layers. Segregation of oxygen toward the surface was observed by secondary ion mass spectroscopy and correlated with resolidification velocities, which vary as a function of laser energy densities.

ISSN:0003-6951    

DOI:10.1063/1.92879

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Ultrafast melting and resolidification on a (111) sufarce of a silicon crystal wafer, induced by 20‐ps pulses at 532‐nm wavelength, is accompanied by the emission of charged particles. This emission is studied as a function of pulse energy, in combination with time‐resolved reflectivity changes and post‐annealing morphology. The data provide evidence that thermalization time for a dense carrier plasma and the lattice is shorter than 10−11s.

ISSN:0003-6951    

DOI:10.1063/1.92843

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The location of substitutional impurities in GaP (Sb and In) has been investigated by channeling. The sites may be determined from the width of ⟨110⟩ backscattering dips, but a new technique based on asymmetry of the channeling dips is developed, which appears to be more powerful for compounds with ZnS structure. It requires smaller ion doses and may be applied also to compounds such as GaAs with nearly equal atomic number of the compound constituents. The technique may also be applied to determine the stacking order in a ⟨111⟩ direction of such compounds.

ISSN:0003-6951    

DOI:10.1063/1.92844

出版商:AIP    

年代:1981

数据来源: AIP