摘要:

Column‐IV (Si, Ge, and Sn) and column‐VI (S, Se, and Te) impurities are used to dope high‐purity layers of vapor epitaxial GaAs. Resistivity and Hall data on a large number of samples show that the common donors in GaAs (assumed to be column‐IV impurities on gallium sites and column‐VI impurities on arsenic sites) are compensated by acceptor centers which are donor impurity‐vacancy complexes. These acceptor complexes are tentatively identified as column‐IV impurities on gallium sites associated with single gallium vacancies and column‐VI impurities on arsenic sites associated with single arsenic vacancies.

ISSN:0003-6951    

DOI:10.1063/1.88288

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Low‐temperature (6 °K) photoluminescence data on Be‐implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4encapsulation is shown to optically activate the implanted Be and reorder the lattice. The ionization energy of Be is estimated to be 22±3 meV.

ISSN:0003-6951    

DOI:10.1063/1.88289

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Based on powder‐metallurgy techniques, a process to fabricate Nb3Sn multifilamentary superconducting wire is described. The current‐carrying capacity of the wire was above 2×105A/cm2at a steady transverse magnetic field of 50 kG and about 1×105A/cm2at 100 kG.

ISSN:0003-6951    

DOI:10.1063/1.88298

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Diffraction effects have been observed in ferrofluids in the presence of a magnetic field. The diffraction pattern from a laser beam normal to a thin layer of ferrofluid and normal to a magnetic field is confined to a plane also normal to the layer and normal to the field, indicating alignment of ferrofluid particles.

ISSN:0003-6951    

DOI:10.1063/1.88299

出版商:AIP    

年代:1975

数据来源: AIP