21. |
cw operation and nitric oxide spectroscopy using diode lasers of Pb1−xGexTe |
|
Applied Physics Letters,
Volume 21,
Issue 10,
1972,
Page 505-507
G.A. Antcliffe,
S.G. Parker,
R.T. Bate,
Preview
|
PDF (261KB)
|
|
摘要:
cw operation at liquid‐helium temperatures of junction lasers fabricated from the IV‐VI alloy Pb1−xGexTe is reported. These lasers are current tunable and emit in the infrared between 4 and 6 &mgr;m. Preliminary high‐resolution spectra of nitric oxide recorded near 5.3 &mgr;m by using these lasers are reported.
ISSN:0003-6951
DOI:10.1063/1.1654236
出版商:AIP
年代:1972
数据来源: AIP
|
22. |
Auger electron spectroscopy and sputter etching of Ni/Au&sngbnd;Ge onn‐GaAs |
|
Applied Physics Letters,
Volume 21,
Issue 10,
1972,
Page 507-510
G.Y. Robinson,
N.L. Jarvis,
Preview
|
PDF (342KB)
|
|
摘要:
A new diagnostic technique was used to examine the alloying behavior of the Ni/Au&sngbnd;Ge Ohmic contact ton‐type GaAs. By combining Auger electron spectroscopy with sputter etching, depth‐composition profiles of Ni, Au, Ge, Ga, and As were obtained for alloyed and unalloyed samples. Gallium out‐diffusion and surface accumulation during alloying was observed. The degree of Ga out‐diffusion as well as the redistribution of Ga and As in the alloyed region was found to depend on the orientation of the GaAs substrate. It was shown that the overlaying Ni film does not cover the Au&sngbnd;Ge uniformly during alloying.
ISSN:0003-6951
DOI:10.1063/1.1654237
出版商:AIP
年代:1972
数据来源: AIP
|
23. |
Optical measurement of the ion temperature in a bariumQplasma |
|
Applied Physics Letters,
Volume 21,
Issue 10,
1972,
Page 510-512
W. Gekelman,
T.R. Hart,
K.C. Rogers,
R.O. Motz,
Preview
|
PDF (238KB)
|
|
摘要:
The ion temperature in a single‐ended bariumQmachine has been determined optically, with and without current drawn through the machine. Ion temperatures which were consistent or slightly higher than the hot‐plate temperature of 0.25 eV rose to 5–7 eV when an electron drift was initiated. The ion temperature rose to 1 eV if an ion current was drawn along the column. These phenomena are independent of magnetic field.
ISSN:0003-6951
DOI:10.1063/1.1654238
出版商:AIP
年代:1972
数据来源: AIP
|
24. |
Subnanosecond pyroelectric detector |
|
Applied Physics Letters,
Volume 21,
Issue 10,
1972,
Page 512-515
C.B. Roundy,
R.L. Byer,
Preview
|
PDF (309KB)
|
|
摘要:
We have designed and tested a 500‐psec‐rise‐time pyroelectric detector. The responsivity is great enough to drive a Tektronix 519 oscilloscope when amplified with a 1.0‐GHz‐bandwidth amplifier. To obtain broad spectral response we have developed a thermally fast‐absorbing black which has approximately 50% absorption from 0.3 &mgr; to greater than 50 &mgr;, and transfers 90% of the absorbed energy to the pyroelectric crystal in 400 psec. The maximum detector output voltage prior to amplification is 2. 0 V, limited by the absorbing black's burn intensity.
ISSN:0003-6951
DOI:10.1063/1.1654239
出版商:AIP
年代:1972
数据来源: AIP
|
25. |
Influence of the current‐phase relationship on theI‐Vcharacteristic of superconducting weak links |
|
Applied Physics Letters,
Volume 21,
Issue 10,
1972,
Page 515-518
F. Auracher,
T. Van Duzer,
Preview
|
PDF (262KB)
|
|
摘要:
I‐Vcharacteristics with and without hysteresis are calculated for various current‐phase relations. We show that the shape of the current‐phase relation has a significant influence on the shape of theI‐Vcharacteristic and the amount of hysteresis in it.
ISSN:0003-6951
DOI:10.1063/1.1654240
出版商:AIP
年代:1972
数据来源: AIP
|
26. |
Subharmonic generation of surface and bulk acoustic waves at high pump amplitudes in piezoelectric semiconductors |
|
Applied Physics Letters,
Volume 21,
Issue 10,
1972,
Page 518-520
S. Zemon,
E. Conwell,
Preview
|
PDF (237KB)
|
|
摘要:
Parametric amplification of acoustic noise has been studied for high‐amplitude surface and bulk waves in photoconducting CdS. In contrast to the situation at low amplitudes, the amplified noise is collinear with the pumping wave and is contained in an extremely narrow band around one‐half the pump frequency. These results, as well as the observed voltage and time dependence, can be accounted for by the tight carrier bunching that occurs at high wave amplitudes.
ISSN:0003-6951
DOI:10.1063/1.1654241
出版商:AIP
年代:1972
数据来源: AIP
|